DONGHAI 东海半导体SJ MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor DJF190N60T SJ MOSFET

Continuous Drain Current:20A	Diode Forward Voltage:1.3V	Drain-Source Breakdown Voltage:600V
Drain-to-Source on-state Resistance:0.16 ~ 0.19Ω	Gate Threshold Voltage:2.5 ~ 4.5V	Input Capacitance:1253pF
Output Capacitance:75.8pF	Package:TO-220F	Reverse Recovery Charge:3.2µC
Reverse Recovery Time:290ns	Reverse Transfer Capacitance:0.59pF	RoHS:Pb-free
Total Gate Charge:26.8nC

DonghaiSemiconductor DJF900N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:5A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:5μA	Drain-to-Source On-State Resistance:0.8 ~ 0.9Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.9nC	Gate-to-Source Charge:1.6nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:276pF	Output Capacitance:23pF
Package Type:TO-220F	Reverse Recovery Charge:0.6μC	Reverse Recovery Time:105ns
Reverse Transfer Capacitance:0.5pF	Total Gate Charge:6.8nC	Turn-off Delay Time:24.7ns
Turn-off Fall Time:13.3ns	Turn-on Delay Time:6.9ns	Turn-on Rise Time:11.1ns

DonghaiSemiconductor DJBS12DN65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:5A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:1 ~ 1.2Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:229pF	Output Capacitance:9.2pF
Package Type:TO-251B	Reverse Recovery Charge:770nC	Reverse Recovery Time:134nS
Reverse Transfer Capacitance:0.8pF	Total Gate Charge:5.9nC	Turn-off Delay Time:18.8nS
Turn-off Fall Time:20.5nS	Turn-on Delay Time:6.8nS	Turn-on Rise Time:11nS

DonghaiSemiconductor DJF12DN65T SJ MOSFET

Certifications:RoHS; Pb-free	Diode Forward Current:5A	Diode Forward Voltage:≤1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:≤1μA	Drain-to-Source on-state Resistance:1Ω(Typ); 1.2Ω(Max)
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:229pF	Output Capacitance:9.2pF
Package:TO-220F	Reverse Recovery Charge:0.77uC	Reverse Recovery Time:134nS
Reverse Transfer Capacitance:0.8pF	Total Gate Charge:5.9nC	Turn-off Delay Time:18.8nS
Turn-off Fall Time:20.5nS	Turn-on Delay Time:6.8nS	Turn-on Rise Time:11nS

DonghaiSemiconductor DJE190N60T SJ MOSFET

Body Diode Forward Voltage:≤1.3V	Diode Forward Current:23A	Drain-to-Source Breakdown Voltage:600V
Drain-to-Source Leakage:1μA	Drain-to-Source on-state Resistance:0.16 ~ 0.19Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-Drain Charge:9.43nC	Gate-to-Source Charge:6.81nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:1253pF	Max Drain Current:23A	Output Capacitance:75.8pF
Package:TO-263	Reverse Recovery Charge:3.2μC	Reverse Recovery Time:290ns
Reverse Transfer Capacitance:0.59pF	RoHS:Pb-free	Total Gate Charge:26.8nC
Turn-off Delay Time:44ns	Turn-off Fall Time:11.9ns	Turn-on Delay Time:12ns
Turn-on Rise Time:17ns

DonghaiSemiconductor DJG12DN65T SJ MOSFET

Breakdown Voltage:650V	Certifications:RoHS	Diode Forward Current:5.5A
Diode Forward Voltage:1.3V	Drain-to-Source on-state Resistance:1Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC	Input Capacitance:229pF
Output Capacitance:9.2pF	Package:TO-220C	Reverse Recovery Charge:0.77µC
Reverse Recovery Time:134nS	Reverse Transfer Capacitance:0.8pF	Total Gate Charge:5.9nC
Turn-off Delay Time:18.8nS	Turn-off Fall Time:20.5nS	Turn-on Delay Time:6.8nS
Turn-on Rise Time:11nS

DonghaiSemiconductor DJB12DN65T SJ MOSFET

Body Diode Forward Voltage:≤1.3V	Drain-Source Breakdown Voltage:650V	Drain-Source On-State Resistance:1Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC
Input Capacitance:229pF	Output Capacitance:9.2pF	Package:TO-251
Reverse Recovery Charge:770nC	Reverse Recovery Time:134ns	Reverse Transfer Capacitance:0.8pF
Total Gate Charge:5.9nC	Turn-Off Delay Time:18.8ns	Turn-Off Fall Time:20.5ns
Turn-On Delay Time:6.8ns	Turn-On Rise Time:11ns

DonghaiSemiconductor DJD12DN65T SJ MOSFET

Diode Forward Current:5.5A	Diode Forward Voltage:≤1.3V	Drain-Source Breakdown Voltage:650V
Drain-Source Leakage Current:≤1μA	Drain-Source On-State Resistance:1 ~ 1.2Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-Drain Charge:2.7nC	Gate-Source Charge:1.5nC	Gate-Source Leakage Current:≤±100nA
Input Capacitance:229pF	Output Capacitance:9.2pF	Package:TO-252B
Reverse Recovery Charge:0.77μC	Reverse Recovery Time:134ns	Reverse Transfer Capacitance:0.8pF
Total Gate Charge:5.9nC	Turn-Off Delay Time:18.8ns	Turn-Off Fall Time:20.5ns
Turn-On Delay Time:6.8ns	Turn-On Rise Time:11ns

DonghaiSemiconductor DJD900N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:6A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage:5μA	Drain-to-Source on-state Resistance:0.8Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.9nC	Gate-to-Source Charge:1.6nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:276pF	Output Capacitance:23pF
Package Type:TO-252B	Reverse Recovery Charge:0.6uC	Reverse Recovery Time:105nS
Reverse Transfer Capacitance:0.5pF	Total Gate Charge:6.8nC	Turn-off Delay Time:24.7nS
Turn-off Fall Time:13.3nS	Turn-on Delay Time:6.9nS	Turn-on Rise Time:11.1nS

DonghaiSemiconductor DJF380N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:11A	Diode Forward Voltage:1.3V
Drain Current:11A	Drain-Source Breakdown Voltage:650V	Drain-Source On-State Resistance:310 ~ 380mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:5.9nC	Gate-to-Source Charge:5.8nC
Input Capacitance:915pF	Output Capacitance:92.3pF	Package:TO-220F
Reverse Recovery Charge:2.7µC	Reverse Recovery Time:250ns	Reverse Transfer Capacitance:26.7pF
Total Gate Charge:19.6nC	Turn-Off Delay Time:70.1ns	Turn-Off Fall Time:34ns
Turn-On Delay Time:18.7ns	Turn-On Rise Time:31.3ns

DonghaiSemiconductor DJP380N65T SJ MOSFET

Breakdown Voltage:650V	Diode Forward Current:11A	Diode Forward Voltage:1.3V
Drain-to-source Leakage Current:≤1μA	Drain-to-source On-state Resistance:310 ~ 380mΩ	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-drain Charge:5.9nC	Gate-to-source Charge:5.8nC	Gate-to-source Leakage Current:≤±100nA
Input Capacitance:915pF	Output Capacitance:92.3pF	Package:DFN5*6
Reverse Recovery Charge:2.7μC	Reverse Recovery Time:250ns	Reverse Transfer Capacitance:26.7pF
Total Gate Charge:19.6nC	Turn-off Delay Time:70.1ns	Turn-off Fall Time:34ns
Turn-on Delay Time:18.7ns	Turn-on Rise Time:31.3ns

DonghaiSemiconductor DJD380N65T SJ MOSFET

Drain Current:11A	Drain-Source Breakdown Voltage:650V	Drain-Source On-State Resistance:310mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Input Capacitance:915pF	Output Capacitance:92.3pF
Package:TO-252B	Reverse Transfer Capacitance:26.7pF	RoHS Compliance:Pb-free
Total Gate Charge:19.6nC

DonghaiSemiconductor DJBS380N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:11A	Diode Forward Voltage:≤1.3V
Drain Current:11A	Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:≤1μA
Drain-Source On-State Resistance:310 ~ 380mΩ	Gate-Drain Charge:5.9nC	Gate-Source Charge:5.8nC
Gate-Source Leakage Current:≤±100nA	Gate-Source Threshold Voltage:2 ~ 4V	Input Capacitance:915pF
Output Capacitance:92.3pF	Package:TO-251B	Reverse Recovery Charge:2.7uC
Reverse Recovery Time:250nS	Reverse Transfer Capacitance:26.7pF	Total Gate Charge:19.6nC
Turn-Off Delay Time:70.1nS	Turn-Off Fall Time:34nS	Turn-On Delay Time:18.7nS
Turn-On Rise Time:31.3nS

DonghaiSemiconductor DJBS900N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:6A	Diode Forward Voltage:≤1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage:≤5μA	Drain-to-Source on-state Resistance:0.8 ~ 0.9Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.9nC	Gate-to-Source Charge:1.6nC
Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:276pF	Output Capacitance:23pF
Package Type:TO-251B	Reverse Recovery Charge:0.6μC	Reverse Recovery Time:105ns
Reverse Transfer Capacitance:0.5pF	Total Gate Charge:6.8nC	Turn-off Delay Time:24.7ns
Turn-off Fall Time:13.3ns	Turn-on Delay Time:6.9ns	Turn-on Rise Time:11.1ns

DonghaiSemiconductor DJZ380N65T SJ MOSFET

Diode Forward Current:11A	Diode Forward Voltage:1.3V	Drain-to-source Breakdown Voltage:650V
Drain-to-source On-state Resistance:310 ~ 380mΩ	Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:5.9nC
Gate-to-source Charge:5.8nC	Gate-to-source Leakage Current:±100nA	Input Capacitance:915pF
Output Capacitance:92.3pF	Package Type:DFN8*8	Reverse Recovery Charge:2.7µC
Reverse Recovery Time:250ns	Reverse Transfer Capacitance:26.7pF	RoHS Compliance:Pb-free
Total Gate Charge:19.6nC	Turn-off Delay Time:70.1ns	Turn-off Fall Time:34ns
Turn-on Delay Time:18.7ns	Turn-on Rise Time:31.3ns

DonghaiSemiconductor DHDSJ15N65 SJ MOSFET

Certifications:RoHS; Pb-free	Diode Forward Current:15A	Diode Forward Voltage:0.5 ~ 1.2V
Drain Current:15A	Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:1μA
Drain-Source On-State Resistance:0.26 ~ 0.30Ω	Forward Transfer Conductance:11.2S	Gate Resistance:2.6Ω
Gate Threshold Voltage:2.5 ~ 3.9V	Gate-Drain Charge:9.7nC	Gate-Source Charge:5nC
Gate-Source Leakage Current:±100nA	Input Capacitance:760pF	Output Capacitance:50pF
Package:TO-252	Reverse Recovery Charge:2930nC	Reverse Recovery Time:250ns
Reverse Transfer Capacitance:28pF	Total Gate Charge:23.8nC	Turn-Off Delay Time:175ns
Turn-Off Fall Time:17ns	Turn-On Delay Time:40ns	Turn-On Rise Time:38ns

DonghaiSemiconductor DJF290N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:1.2V
Drain-to-source Breakdown Voltage:650V	Drain-to-source On-state Resistance:265 ~ 290mΩ	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.46nC	Input Capacitance:928.6pF
Output Capacitance:22.6pF	Package Type:TO-220F	Reverse Recovery Charge:2.5uC
Reverse Recovery Time:235nS	Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC
Turn-off Delay Time:44.3nS	Turn-off Fall Time:18.8nS	Turn-on Delay Time:17.3nS
Turn-on Rise Time:19.8nS

DonghaiSemiconductor DJB290N65T SJ MOSFET

Certifications:Pb-free	Diode Forward Current:15A	Diode Forward Voltage:1.2V
Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:1uA	Drain-Source On-State Resistance:265 ~ 290mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-Drain Charge:6.4nC	Gate-Source Charge:5.46nC
Gate-Source Leakage Current:±100nA	Input Capacitance:928.6pF	Output Capacitance:22.6pF
Package:TO-251	Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-Off Delay Time:44.3ns
Turn-Off Fall Time:18.8ns	Turn-On Delay Time:17.3ns	Turn-On Rise Time:19.8ns

DonghaiSemiconductor DJG290N65T SJ MOSFET

Diode Forward Current:15A	Diode Forward Voltage:1.2V	Drain-to-source Breakdown Voltage:650V
Drain-to-source Leakage Current:5uA	Drain-to-source On-state Resistance:265 ~ 280mΩ	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.5nC	Gate-to-source Leakage Current:±100nA
Input Capacitance:928.6pF	Output Capacitance:22.6pF	Package Type:TO-220C
Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235nS	Reverse Transfer Capacitance:1.8pF
RoHS Compliance:Pb-free	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3nS
Turn-off Fall Time:18.8nS	Turn-on Delay Time:17.3nS	Turn-on Rise Time:19.8nS

DonghaiSemiconductor DJBS290N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:1.2V
Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:1uA	Drain-Source On-State Resistance:265 ~ 290mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:6.4nC	Gate-to-Source Charge:5.46nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:928pF	Output Capacitance:22.6pF
Package:TO-251B	Reverse Recovery Charge:2.5µC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-Off Delay Time:44.3ns
Turn-Off Fall Time:18.8ns	Turn-On Delay Time:17.3ns	Turn-On Rise Time:19.8ns

DonghaiSemiconductor DJD290N65T SJ MOSFET

Body Diode Forward Voltage:1.2V	Breakdown Voltage:650V	Continuous Drain Current:15A
Drain-to-source On-state Resistance:265 ~ 290mΩ	Gate Threshold Voltage:2.5 ~ 4.5V	Input Capacitance:928.6pF
Output Capacitance:22.6pF	Package:TO-252B	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3ns
Turn-off Fall Time:18.8ns	Turn-on Delay Time:17.3ns	Turn-on Rise Time:19.8ns

DonghaiSemiconductor DJZ290N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:≤1.2V
Drain-to-source Breakdown Voltage:650V	Drain-to-source Leakage:≤1uA	Drain-to-source On-state Resistance:265mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.5nC
Gate-to-source Leakage Current:≤±100nA	Input Capacitance:928.6pF	Output Capacitance:22.6pF
Package:DFN8*8	Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3ns
Turn-off Fall Time:18.8ns	Turn-on Delay Time:17.3ns	Turn-on Rise Time:19.8ns

DonghaiSemiconductor DJP290N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:1.2V
Drain-Source Breakdown Voltage:650V	Drain-Source On-State Resistance:265 ~ 290mΩ	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-Source Leakage Current:±100nA	Gate-to-Drain Charge:6.4nC	Gate-to-Source Charge:5.5nC
Input Capacitance:928.6pF	Output Capacitance:22.6pF	Package Type:DFN5*6
Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235nS	Reverse Transfer Capacitance:1.8pF
Total Gate Charge:18.4nC	Turn-Off Delay Time:44.3nS	Turn-Off Fall Time:18.8nS
Turn-On Delay Time:17.3nS	Turn-On Rise Time:19.8nS

DonghaiSemiconductor DJE290N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:≤1.2V
Drain-to-source Breakdown Voltage:650V	Drain-to-source Leakage Current:≤1μA	Drain-to-source On-state Resistance:265 ~ 290mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.46nC
Gate-to-source Leakage Current:±100nA	Input Capacitance:928.6pF	Output Capacitance:22.6pF
Package:TO-263	Reverse Recovery Charge:2.5μC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3ns
Turn-off Fall Time:18.8ns	Turn-on Delay Time:17.3ns	Turn-on Rise Time:19.8ns

DonghaiSemiconductor DJF190N65T SJ MOSFET

Certifications:RoHS	Drain Current:20A	Drain-Source Breakdown Voltage:650V
Drain-Source On-State Resistance:0.16Ω	Gate Threshold Voltage:2.5 ~ 4.5V	Input Capacitance:1253pF
Package:TO-220F	Reverse Recovery Time:290ns	Total Gate Charge:26.8nC

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