DONGHAI 东海半导体SJ MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

访问主页

DonghaiSemiconductor DJP190N65T SJ MOSFET

Breakdown Voltage:650V	Diode Forward Current:20A	Diode Forward Voltage:1.3V
Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:0.16 ~ 0.19Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-Drain Charge:9.43nC	Gate-to-Source Charge:6.81nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:1253pF	Output Capacitance:75.8pF	Package:DFN5*6
Reverse Recovery Charge:3.2μC	Reverse Recovery Time:290ns	Reverse Transfer Capacitance:0.59pF
Total Gate Charge:26.8nC	Turn-off Delay Time:44ns	Turn-off Fall Time:11.9ns
Turn-on Delay Time:12ns	Turn-on Rise Time:17ns

DonghaiSemiconductor DJG190N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:20A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:0.16 ~ 0.19Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:9.43nC	Gate-to-Source Charge:6.81nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1253pF	Output Capacitance:75.8pF
Package Type:TO-220C	Reverse Recovery Charge:3.2μC	Reverse Recovery Time:290ns
Reverse Transfer Capacitance:0.59pF	Total Gate Charge:26.8nC	Turn-off Delay Time:44ns
Turn-off Fall Time:11.9ns	Turn-on Delay Time:12ns	Turn-on Rise Time:17ns

DonghaiSemiconductor DHSJ21N65Z SJ MOSFET

Diode Forward Current:16A	Diode Forward Voltage:0.86 ~ 1.2V	Drain-to-Source Breakdown Voltage:650V
Drain-to-Source Leakage Current:1μA; 100μA	Drain-to-Source on-state Resistance:150 ~ 190mΩ	Gate Resisitance:7.1Ω
Gate Threshold Voltage:3.0 ~ 4.0V	Gate-to-Drain Charge:16.8nC	Gate-to-Source Charge:8.6nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1375pF	Output Capacitance:66pF
Package Type:PDFN4(8*8)	Reverse Recovery Charge:4.32μC	Reverse Recovery Time:296nS
Reverse Transfer Capacitance:0.49pF	Total Gate Charge:40.6nC	Turn-off Delay Time:184nS
Turn-off Fall Time:25nS	Turn-on Delay Time:37nS	Turn-on Rise Time:30nS

DonghaiSemiconductor DJE190N65T SJ MOSFET

Diode Forward Current:23A	Diode Forward Voltage:1.3V	Drain-to-Source Breakdown Voltage:650V
Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:0.16 ~ 0.19Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-Drain Charge:9.43nC	Gate-to-Source Charge:6.81nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:1253pF	Output Capacitance:75.8pF	Package:TO-263
Reverse Recovery Charge:3.2μC	Reverse Recovery Time:290ns	Reverse Transfer Capacitance:0.59pF
RoHS Compliance:Pb-free	Total Gate Charge:26.8nC	Turn-off Delay Time:44ns
Turn-off Fall Time:11.9ns	Turn-on Delay Time:12ns	Turn-on Rise Time:17ns

DonghaiSemiconductor DJD190N65T SJ MOSFET

Continuous Drain Current:25A	Diode Forward Current:25A	Diode Forward Voltage:1.3V
Drain-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:0.16Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:9.43nC	Gate-to-Source Charge:6.81nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1253pF	Output Capacitance:75.8pF
Package:TO-252B	Reverse Recovery Charge:3.2nC	Reverse Recovery Time:290ns
Reverse Transfer Capacitance:0.59pF	Total Gate Charge:26.8nC	Turn-off Delay Time:44ns
Turn-off Fall Time:11.9ns	Turn-on Delay Time:12ns	Turn-on Rise Time:17ns

DonghaiSemiconductor DJZ190N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:20A	Diode Forward Voltage:≤1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source On-State Resistance:0.16 ~ 0.19Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:9.4nC	Gate-to-Source Charge:6.8nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1253pF	Output Capacitance:75.8pF
Package:DFN8*8	Reverse Recovery Charge:3.2μC	Reverse Recovery Time:290nS
Reverse Transfer Capacitance:0.59pF	Total Gate Charge:26.8nC	Turn-off Delay Time:44nS
Turn-off Fall Time:11.9nS	Turn-on Delay Time:12nS	Turn-on Rise Time:17nS

DonghaiSemiconductor DJF065N65T SJ MOSFET

Body Diode Forward Current:50A	Body Diode Forward Voltage:1.3V	Breakdown Voltage:650V
Certifications:RoHS	Drain-Source Leakage Current:5μA	Drain-Source On-State Resistance:58mΩ
Drain-Source On-State Resistance Max:65mΩ	Gate Threshold Voltage:2.5 ~ 4.5V	Gate-Source Leakage Current:±100nA
Gate-to-Drain Charge:24.4nC	Gate-to-Source Charge:15.5nC	Input Capacitance:2648pF
Output Capacitance:75.2pF	Package:TO-220F	Reverse Recovery Charge:4.7μC
Reverse Recovery Time:350ns	Reverse Transfer Capacitance:5.2pF	Total Gate Charge:62.5nC
Turn-Off Delay Time:190ns	Turn-Off Fall Time:70ns	Turn-On Delay Time:44ns
Turn-On Rise Time:87ns

DonghaiSemiconductor DJC065N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:70 A	Diode Forward Voltage:≤1.3 V
Drain-to-Source Breakdown Voltage:650 V	Drain-to-Source Leakage:5 μA	Drain-to-Source on-state Resistance:58 mΩ
Gate Threshold Voltage:2.5 ~ 4.5 V	Gate-to-Drain Charge:24.4 nC	Gate-to-Source Charge:15.5 nC
Gate-to-Source Leakage Current:±100 nA	Input Capacitance:2648 pF	Output Capacitance:75.2 pF
Package:TO-247	Reverse Recovery Charge:4.7 μC	Reverse Recovery Time:350 ns
Reverse Transfer Capacitance:5.2 pF	Total Gate Charge:62.5 nC	Turn-off Delay Time:190 ns
Turn-off Fall Time:70 ns	Turn-on Delay Time:44 ns	Turn-on Rise Time:87 ns

DonghaiSemiconductor DJC040N65 SJ MOSFET

Diode Forward Current:72A	Diode Forward Voltage:1.1V	Drain-to-Source Breakdown Voltage:650V
Drain-to-Source Leakage:5μA	Drain-to-Source on-state Resistance:36 ~ 40mΩ	Gate Threshold Voltage:3.2 ~ 4.6V
Gate-to-Drain Charge:86nC	Gate-to-Source Charge:42nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:4985pF	Output Capacitance:255pF	Package:TO-247
Reverse Recovery Charge:1.3uC	Reverse Recovery Time:175nS	Reverse Transfer Capacitance:0.9pF
RoHS:Pb-free	Total Gate Charge:154nC	Turn-off Delay Time:325nS
Turn-off Fall Time:95nS	Turn-on Delay Time:100nS	Turn-on Rise Time:110nS

DonghaiSemiconductor DJEV065N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:70A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage:5μA	Drain-to-Source on-state Resistance:58mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:24.4nC	Gate-to-Source Charge:15.5nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:2648pF	Output Capacitance:75.2pF
Package:TO-263-7L	Reverse Recovery Charge:4.7uC	Reverse Recovery Time:350nS
Reverse Transfer Capacitance:5.2pF	Total Gate Charge:62.5nC	Turn-off Delay Time:190nS
Turn-off Fall Time:70nS	Turn-on Delay Time:44nS	Turn-on Rise Time:87nS

DonghaiSemiconductor DJC030N65T SJ MOSFET

Certifications:RoHS	Diode Forward Current:100A	Diode Forward Voltage:1.3V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source on-state Resistance:23 ~ 30mΩ	Gate Threshold Voltage:3 ~ 5V
Gate-to-Drain Charge:52nC	Gate-to-Source Charge:54nC	Input Capacitance:11802pF
Output Capacitance:416pF	Package Type:TO-247	Reverse Recovery Charge:11uC
Reverse Recovery Time:440nS	Reverse Transfer Capacitance:7pF	Total Gate Charge:197nC
Turn-off Delay Time:150nS	Turn-off Fall Time:5.5nS	Turn-on Delay Time:34nS
Turn-on Rise Time:52nS

DonghaiSemiconductor DJF125N65M2F SJ MOSFET

Certifications:RoHS	Diode Forward Current:25A	Diode Forward Voltage:0.9V
Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:5μA	Drain-Source Leakage Current at 150°C:720μA
Drain-Source On-State Resistance:110 ~ 125mΩ	Gate-Drain Charge:29nC	Gate-Source Charge:13nC
Gate-Source Leakage Current:±100nA	Gate-Source Threshold Voltage:3 ~ 4.5V	Input Capacitance:1582pF
Output Capacitance:92pF	Package:TO-220F	Rated Drain Current:27A
Reverse Recovery Charge:1309nC	Reverse Recovery Time:171ns	Reverse Transfer Capacitance:1.2pF
Total Gate Charge:51nC	Turn-off Delay Time:65ns	Turn-off Fall Time:29ns
Turn-on Delay Time:24ns	Turn-on Rise Time:51ns

DonghaiSemiconductor DJF900N70T SJ MOSFET

Certifications:RoHS	Diode Forward Current:5A	Diode Forward Voltage:≤1.3V
Drain-to-Source Breakdown Voltage:700V	Drain-to-Source Leakage:≤5μA	Drain-to-Source on-state Resistance:0.8Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.9nC	Gate-to-Source Charge:1.6nC
Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:276pF	Output Capacitance:23pF
Package:TO-220F	Reverse Recovery Charge:0.6µC	Reverse Recovery Time:105ns
Reverse Transfer Capacitance:0.5pF	Total Gate Charge:6.8nC	Turn-off Delay Time:24.7ns
Turn-off Fall Time:13.3ns	Turn-on Delay Time:6.9ns	Turn-on Rise Time:11.1ns

DonghaiSemiconductor DJC030N65TF SJ MOSFET

Body Diode Forward Voltage:1.3V	Diode Forward Current:100A	Drain-Source Breakdown Voltage:650V
Drain-Source On-State Resistance:23mΩ	Drain-to-source Leakage:10μA	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-drain Charge:52nC	Gate-to-source Charge:54nC	Gate-to-source Leakage Current:±500nA
Input Capacitance:11802pF	Output Capacitance:416pF	Package:TO-247
Reverse Recovery Charge:2.2uC	Reverse Recovery Time:243nS	Reverse Transfer Capacitance:7pF
Total Gate Charge:197nC	Turn-off Delay Time:150nS	Turn-off Fall Time:5.5nS
Turn-on Delay Time:34nS	Turn-on Rise Time:52nS

DonghaiSemiconductor DJC099N65M2F SJ MOSFET

Diode Forward Current:31A	Diode Forward Voltage:1.3V	Drain-to-Source Breakdown Voltage:650V
Drain-to-Source Leakage:5μA	Drain-to-Source on-state Resistance:0.09Ω	Gate Threshold Voltage:3 ~ 5V
Gate-to-Drain Charge:36.8nC	Gate-to-Source Charge:17.6nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:2026pF	Output Capacitance:550pF	Package Type:TO-247
Reverse Recovery Charge:0.6µC	Reverse Recovery Time:120nS	Reverse Transfer Capacitance:6pF
RoHS:Pb-free	Total Gate Charge:64nC	Turn-off Delay Time:37nS
Turn-off Fall Time:5.7nS	Turn-on Delay Time:18nS	Turn-on Rise Time:6.2nS

DonghaiSemiconductor DJD12DN70T SJ MOSFET

Continuous Drain Current:5.5A	Diode Forward Current:5.5A	Diode Forward Voltage:≤1.3V
Drain-Source Breakdown Voltage:700V	Drain-Source On-State Resistance:1 ~ 1.2Ω	Drain-to-Source Leakage:≤5μA
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC
Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:229pF	Output Capacitance:9.2pF
Package:TO-252	Reverse Recovery Charge:0.77uC	Reverse Recovery Time:134nS
Reverse Transfer Capacitance:0.8pF	Total Gate Charge:5.9nC	Turn-off Delay Time:18.8nS
Turn-off Fall Time:20.5nS	Turn-on Delay Time:6.8nS	Turn-on Rise Time:11nS

DonghaiSemiconductor DJD900N70T SJ MOSFET

Certifications:RoHS	Diode Forward Current:6A	Diode Forward Voltage:≤1.3V
Drain-to-Source Breakdown Voltage:700V	Drain-to-Source Leakage Current:≤5μA	Drain-to-Source on-state Resistance:0.8 ~ 0.9Ω
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:2.9nC	Gate-to-Source Charge:1.6nC
Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:276pF	Output Capacitance:23pF
Package:TO-252B	Product Model:DJD900N70T	Reverse Recovery Charge:0.6μC
Reverse Recovery Time:105ns	Reverse Transfer Capacitance:0.5pF	Total Gate Charge:6.8nC
Turn-off Delay Time:24.7ns	Turn-off Fall Time:13.3ns	Turn-on Delay Time:6.9ns
Turn-on Rise Time:11.1ns

DonghaiSemiconductor DJF12DN70T SJ MOSFET

Diode Forward Current:5A	Diode Forward Voltage:1.3V	Drain-to-Source Breakdown Voltage:700V
Drain-to-Source Leakage Current:5μA	Drain-to-Source on-state Resistance:1.2Ω	Gate Threshold Voltage:2.5 ~ 4.5V
Gate-to-Drain Charge:2.7nC	Gate-to-Source Charge:1.5nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:229pF	Output Capacitance:9.2pF	Package Type:TO-220F
Reverse Recovery Charge:0.77uC	Reverse Recovery Time:134nS	Reverse Transfer Capacitance:0.8pF
RoHS Compliance:Pb-free	Total Gate Charge:5.9nC	Turn-off Delay Time:18.8nS
Turn-off Fall Time:20.5nS	Turn-on Delay Time:6.8nS	Turn-on Rise Time:11nS

DonghaiSemiconductor DJF360N70T SJ MOSFET

Diode forward current:12A	Diode forward voltage:1.2V	Drain Current:12A
Drain-Source Breakdown Voltage:700V	Drain-Source On-State Resistance:360mΩ	Drain-to-source leakage:5uA
Drain-to-source on-state resistance:360mΩ	Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain charge:6.4nC
Gate-to-source charge:5.5nC	Gate-to-source leakage current:±100nA	Input Capacitance:927pF
Output Capacitance:22.6pF	Package:TO-220F	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Reverse recovery charge:2.5uC	RoHS:Pb-free
Total Gate Charge:18.4nC	Turn-off delay time:44.3nS	Turn-off fall time:18.8nS
Turn-on delay time:17.3nS	Turn-on rise time:19.8nS

DonghaiSemiconductor DJE360N70T SJ MOSFET

Certifications:RoHS	Diode Forward Current:12A	Diode Forward Voltage:1.2V
Drain-to-source Breakdown Voltage:700V	Drain-to-source Leakage Current:5uA	Drain-to-source On-state Resistance:310mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.5nC
Gate-to-source Leakage Current:±100nA	Input Capacitance:927pF	Output Capacitance:22.6pF
Package Type:TO-263	Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235nS
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3nS
Turn-off Fall Time:18.8nS	Turn-on Delay Time:17.3nS	Turn-on Rise Time:19.8nS

DonghaiSemiconductor DJD360N70T SJ MOSFET

Certifications:RoHS	Diode Forward Current:12A	Diode Forward Voltage:1.2V
Drain-to-source Breakdown Voltage:700V	Drain-to-source Leakage Current:5uA	Drain-to-source On-state Resistance:310 ~ 360mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.5nC
Gate-to-source Leakage Current:±100nA	Input Capacitance:927pF	Output Capacitance:22.6pF
Package Type:TO-252B	Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3ns
Turn-off Fall Time:18.8ns	Turn-on Delay Time:17.3ns	Turn-on Rise Time:19.8ns

DonghaiSemiconductor DJF280N70T SJ MOSFET

Diode forward current:15A	Diode forward voltage:1.2V	Drain-Source Breakdown Voltage:700V
Drain-Source On-State Resistance:260mΩ	Drain-to-source leakage:5uA	Drain-to-source on-state resistance:280mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain(miller) charge:6.4nC	Gate-to-source charge:5.5nC
Gate-to-source leakage current:±100nA	Input Capacitance:928.6pF	Maximum Drain Current:15A
Output Capacitance:22.6pF	Package:TO-220F	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Reverse recovery charge:2.5uC	RoHS Compliance:Pb-free
Total gate charge:18.4nC	Turn-off delay time:44.3nS	Turn-off fall time:18.8nS
Turn-on delay time:17.3nS	Turn-on rise time:19.8nS

DonghaiSemiconductor DJG360N70T SJ MOSFET

Breakdown Voltage:700V	Certifications:RoHS	Diode Forward Current:12A
Diode Forward Voltage:≤1.2V	Drain-to-source Leakage Current:≤5uA	Drain-to-source On-state Resistance:310 ~ 360mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.5nC
Gate-to-source Leakage Current:≤±100nA	Input Capacitance:927pF	Output Capacitance:22.6pF
Package Type:TO-220C	Reverse Recovery Charge:2.5µC	Reverse Recovery Time:235ns
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3ns
Turn-off Fall Time:18.8ns	Turn-on Delay Time:17.3ns	Turn-on Rise Time:19.8ns

DonghaiSemiconductor DJG280N70T SJ MOSFET

Body Diode Forward Current:15A	Body Diode Forward Voltage:1.2V	Certifications:RoHS
Drain Current:15A	Drain-Source Breakdown Voltage:700V	Drain-Source On-State Resistance:260mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-Drain Charge:6.4nC	Gate-to-Source Charge:5.5nC
Input Capacitance:928.6pF	Output Capacitance:22.6pF	Package:TO-220C
Reverse Recovery Charge:2.5µC	Reverse Recovery Time:235ns	Reverse Transfer Capacitance:1.8pF
Total Gate Charge:18.4nC	Turn-Off Delay Time:44.3ns	Turn-Off Fall Time:18.8ns
Turn-On Delay Time:17.3ns	Turn-On Rise Time:19.8ns

DonghaiSemiconductor DJD280N70T SJ MOSFET

Certifications:RoHS	Diode Forward Current:15A	Diode Forward Voltage:1.2V
Drain-to-source Breakdown Voltage:700V	Drain-to-source Leakage Current:5uA	Drain-to-source On-state Resistance:260 ~ 280mΩ
Gate Threshold Voltage:2.5 ~ 4.5V	Gate-to-drain Charge:6.4nC	Gate-to-source Charge:5.46nC
Gate-to-source Leakage Current:±100nA	Input Capacitance:928.6pF	Output Capacitance:22.6pF
Package Type:TO-252	Reverse Recovery Charge:2.5uC	Reverse Recovery Time:235nS
Reverse Transfer Capacitance:1.8pF	Total Gate Charge:18.4nC	Turn-off Delay Time:44.3nS
Turn-off Fall Time:18.8nS	Turn-on Delay Time:17.3nS	Turn-on Rise Time:19.8nS

1 2