DONGHAI 东海半导体HV MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor F740 HV MOSFET

Certifications:RoHS	Continuous Drain Current:10A	Drain-Source Breakdown Voltage:400V
Drain-Source On Resistance:0.45Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:1130pF
Package:TO-220F	Reverse Recovery Time:410ns	Total Gate Charge:25nC

DonghaiSemiconductor D18N20 HV MOSFET

Diode Forward Current:18A	Diode Forward Voltage:1.5V	Drain-to-Source Breakdown Voltage:200V
Drain-to-Source Leakage:10μA	Drain-to-Source on-state Resistance:0.15 ~ 0.18Ω	Gate Threshold Voltage:2 ~ 4V
Gate-to-Drain Charge:6.2nC	Gate-to-Source Charge:7.4nC	Gate-to-Source Leakage Current:±100nA
Input Capacitance:1165pF	Output Capacitance:145pF	Package:TO-252B
Reverse Recovery Charge:450nC	Reverse Recovery Time:100ns	Reverse Transfer Capacitance:10pF
Total Gate Charge:21.5nC	Turn-off Delay Time:25ns	Turn-off Fall Time:8ns
Turn-on Delay Time:10ns	Turn-on Rise Time:19ns

DonghaiSemiconductor F5N50 HV MOSFET

Continuous Drain Current:5A	Continuous Source Current:5A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:1.4 ~ 1.6Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:3.1nC	Gate-to-Source Charge:3.2nC
Input Capacitance:570pF	Output Capacitance:55pF	Package:TO-220F
Reverse Recovery Charge:1720nC	Reverse Recovery Time:225ns	Reverse Transfer Capacitance:1.5pF
Total Gate Charge:10.5nC	Turn-off Delay Time:15.5ns	Turn-off Fall Time:12ns
Turn-on Delay Time:7.8ns	Turn-on Rise Time:11.5ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D18N25 HV MOSFET

Certifications:RoHS	Diode Forward Current:18A	Diode Forward Voltage:1.4V
Drain Current:18A	Drain-Source Breakdown Voltage:250V	Drain-Source Leakage Current:1μA
Drain-Source On-State Resistance Max:0.25Ω	Gate-Drain Charge:5nC	Gate-Source Charge:7.5nC
Gate-Source Leakage Current:±100nA	Gate-Source Threshold Voltage:2 ~ 4V	Input Capacitance:1150pF
Output Capacitance:156pF	Package:TO-252B	Reverse Recovery Charge:930nC
Reverse Recovery Time:140ns	Reverse Transfer Capacitance:11pF	Total Gate Charge:20.5nC
Turn-off Delay Time:47.8ns	Turn-off Fall Time:22.5ns	Turn-on Delay Time:14.5ns
Turn-on Rise Time:31.5ns

DonghaiSemiconductor 5N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:5A	Continuous Source Current:5A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:1.4Ω
Drain-Source On Resistance Max:1.6Ω	Gate-Source Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:4.9nC	Gate-to-Source Charge:3.1nC	Input Capacitance:584pF
Output Capacitance:61pF	Package:TO-220	Reverse Recovery Charge:1555nC
Reverse Recovery Time:358ns	Reverse Transfer Capacitance:4pF	Total Gate Charge:12.6nC
Turn-off Delay Time:32ns	Turn-off Fall Time:11ns	Turn-on Delay Time:14ns
Turn-on Rise Time:18ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor B5N50 HV MOSFET

Certifications:RoHS	Continuous Source Current:5A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:1.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:4.9nC	Gate-to-Source Charge:3.1nC
Input Capacitance:584pF	Output Capacitance:61pF	Package Type:TO-251B
Reverse Recovery Charge:1555nC	Reverse Recovery Time:358ns	Reverse Transfer Capacitance:4pF
Total Gate Charge:12.6nC	Turn-off Delay Time:32ns	Turn-off Fall Time:11ns
Turn-on Delay Time:14ns	Turn-on Rise Time:18ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor D5N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:5A	Continuous Source Current:5A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:1.4Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:4.9nC
Gate-to-Source Charge:3.1nC	Input Capacitance:584pF	Output Capacitance:61pF
Package:TO-252	Reverse Recovery Charge:1555nC	Reverse Recovery Time:358ns
Reverse Transfer Capacitance:4pF	Total Gate Charge:12.6nC	Turn-off Delay Time:32ns
Turn-off Fall Time:11ns	Turn-on Delay Time:14ns	Turn-on Rise Time:18ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor D8N50 HV MOSFET

Certifications:Pb-free	Continuous Drain Current:8A	Continuous Source Current:8A
Drain-Source Breakdown Voltage:500V	Drain-Source Diode Forward Voltage:1.5V	Drain-Source On Resistance:0.72Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9nC
Gate-to-Source Charge:5nC	Input Capacitance:1121pF	Output Capacitance:110pF
Package:TO-252B	Reverse Recovery Charge:1830nC	Reverse Recovery Time:385ns
Reverse Transfer Capacitance:7pF	Total Gate Charge:24nC	Turn-off Delay Time:44ns
Turn-off Fall Time:15ns	Turn-on Delay Time:18ns	Turn-on Rise Time:20ns
Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 8N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:8A	Continuous Source Current:8A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.72Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:5.5nC
Gate-to-Source Charge:5.9nC	Input Capacitance:1090pF	Output Capacitance:100pF
Package:TO-220	Reverse Recovery Charge:2550nC	Reverse Recovery Time:260ns
Reverse Transfer Capacitance:3.3pF	Total Gate Charge:19.5nC	Turn-off Delay Time:26.5ns
Turn-off Fall Time:15.5ns	Turn-on Delay Time:10.5ns	Turn-on Rise Time:14.5ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F10N50 HV MOSFET

Certifications:RoHS	Continuous Source Current:10A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.49Ω; 0.75Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC	Gate-to-Source Charge:7.9nC
Input Capacitance:1642pF	Output Capacitance:128pF	Package Type:TO-220F
Reverse Recovery Charge:2588nC	Reverse Recovery Time:420ns	Reverse Transfer Capacitance:8.4pF
Total Gate Charge:32nC	Turn-off Delay Time:52ns	Turn-off Fall Time:21ns
Turn-on Delay Time:26ns	Turn-on Rise Time:20ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F8N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:8 A	Continuous Source Current:8 A
Diode Forward Voltage:1.5 V	Drain Source Breakdown Voltage:500 V	Drain Source On Resistance:0.72 ~ 0.9 Ω
Gate Threshold Voltage:2.0 ~ 4.0 V	Gate to Body Leakage Current:±100 nA	Gate to Drain Charge:9 nC
Gate to Source Charge:5 nC	Input Capacitance:1121 pF	Output Capacitance:110 pF
Package:TO-220F	Reverse Recovery Charge:1830 nC	Reverse Recovery Time:385 ns
Reverse Transfer Capacitance:7 pF	Total Gate Charge:24 nC	Turn off Delay Time:44 ns
Turn off Fall Time:15 ns	Turn on Delay Time:18 ns	Turn on Rise Time:20 ns
Zero Gate Voltage Drain Current:1 μA

DonghaiSemiconductor B8N50 HV MOSFET

Continuous Drain Current:8A	Continuous Source Current:8A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.72Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9nC	Gate-to-Source Charge:5nC
Input Capacitance:1121pF	Output Capacitance:110pF	Package:TO-251B; TO-251
Reverse Recovery Charge:1830nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:7pF
RoHS:Pb-free	Total Gate Charge:24nC	Turn-off Delay Time:44ns
Turn-off Fall Time:15ns	Turn-on Delay Time:18ns	Turn-on Rise Time:20ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F13N50 HV MOSFET

Continuous Source Current:13A	Diode Forward Voltage:1.5V	Drain Source Breakdown Voltage:500V
Drain Source On Resistance:0.35 ~ 0.45Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate To Body Leakage Current:±100nA
Gate To Drain Charge:14nC	Gate To Source Charge:9.2nC	Input Capacitance:1957pF
Output Capacitance:195pF	Package:TO-220F	Rated Drain Current:13A
Reverse Recovery Charge:4500nC	Reverse Recovery Time:520ns	Reverse Transfer Capacitance:44pF
RoHS:Pb-free	Total Gate Charge:40nC	Turn Off Delay Time:62ns
Turn Off Fall Time:32ns	Turn On Delay Time:28ns	Turn On Rise Time:21ns
Voltage Change Rate:12V/ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor 18N50D HV MOSFET

Continuous Drain Current:18A	Continuous Source Current:18A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.24 ~ 0.35Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:18.6nC	Gate-to-Source Charge:12.6nC
Input Capacitance:2919pF	Output Capacitance:277pF	Package:TO-220C
Reverse Recovery Charge:5671nC	Reverse Recovery Time:535ns	Reverse Transfer Capacitance:16pF
RoHS:Pb-free	Total Gate Charge:52nC	Turn-off Delay Time:82ns
Turn-off Fall Time:45ns	Turn-on Delay Time:34ns	Turn-on Rise Time:65ns
Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 13N50 HV MOSFET

Certifications:RoHS	Continuous Source Current:13A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.35Ω; 0.45Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:14nC	Gate-to-Source Charge:9.2nC
Input Capacitance:1957pF	Output Capacitance:195pF	Package Type:TO-220
Reverse Recovery Charge:4500nC	Reverse Recovery Time:520ns	Reverse Transfer Capacitance:44pF
Total Gate Charge:40nC	Turn-off Delay Time:62ns	Turn-off Fall Time:32ns
Turn-on Delay Time:28ns	Turn-on Rise Time:21ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 23N50D HV MOSFET

Certifications:RoHS	Continuous Drain Current:23A	Continuous Source Current:23A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.22 ~ 0.28Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:18.6nC
Gate-to-Source Charge:12.6nC	Input Capacitance:2919pF	Output Capacitance:277pF
Package:TO-3PN; TO-3P	Reverse Recovery Charge:5671nC	Reverse Recovery Time:535ns
Reverse Transfer Capacitance:16pF	Total Gate Charge:52nC	Turn-off Delay Time:82ns
Turn-off Fall Time:45ns	Turn-on Delay Time:34ns	Turn-on Rise Time:65ns
Zero Gate Voltage Drain Current:1μA	Zero Gate Voltage Drain Current (125°C):100μA

DonghaiSemiconductor F18N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:18A	Continuous Source Current:18A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.24 ~ 0.35Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Drain Charge:18.6nC	Gate-to-Source Charge:12.6nC
Input Capacitance:2919pF	Output Capacitance:277pF	Package:TO-220F
Reverse Recovery Charge:5671nC	Reverse Recovery Time:535ns	Reverse Transfer Capacitance:16pF
Total Gate Charge:52nC	Turn-off Delay Time:82ns	Turn-off Fall Time:45ns
Turn-on Delay Time:34ns	Turn-on Rise Time:65ns

DonghaiSemiconductor 18N50 HV MOSFET

Continuous Drain Current:18A	Continuous Source Current:18A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:500V	Drain-Source On Resistance:0.24Ω; 0.35Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-Drain Charge:18.6nC	Gate-Source Charge:12.6nC	Gate-to-Body Leakage Current:±100nA
Input Capacitance:2919pF	Output Capacitance:277pF	Package:TO-220C
Reverse Recovery Charge:5671nC	Reverse Recovery Time:535ns	Reverse Transfer Capacitance:16pF
RoHS:Pb-free	Total Gate Charge:52nC	Turn-Off Delay Time:82ns
Turn-Off Fall Time:45ns	Turn-On Delay Time:34ns	Turn-On Rise Time:65ns
Zero Gate Voltage Drain Current:≤1μA; ≤100μA

DonghaiSemiconductor F20N50 HV MOSFET

Certifications:RoHS	Continuous Drain Current:20A	Continuous Source Current:20A
Diode Forward Voltage:1.5V	Drain Source Breakdown Voltage:500V	Drain Source On Resistance:0.23 ~ 0.30Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate to Body Leakage Current:±100nA	Gate to Drain Charge:13.5nC
Gate to Source Charge:17.4nC	Input Capacitance:3350pF	Output Capacitance:253pF
Package:TO-220F	Reverse Recovery Charge:6240nC	Reverse Recovery Time:380ns
Reverse Transfer Capacitance:9pF	Total Gate Charge:53nC	Turn off Delay Time:68.3ns
Turn off Fall Time:36ns	Turn on Delay Time:25.8ns	Turn on Rise Time:37.5ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor 28N50D HV MOSFET

Continuous Drain Current:28A	Drain-Source Breakdown Voltage:500V	Drain-Source On-Resistance:0.16 ~ 0.25Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:4300pF	Package Type:TO-3PN
RoHS Compliance:Pb-free	Total Gate Charge:110nC

DonghaiSemiconductor D2N60 HV MOSFET

Continuous Drain Current:2A	Continuous Source Current (Body Diode):2A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:3.6 ~ 4.5Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Input Capacitance:335pF	Output Capacitance:33pF
Package:TO-252	Reverse Recovery Charge:610nC	Reverse Recovery Time:187ns
Reverse Transfer Capacitance:3pF	RoHS:Pb-free	Total Gate Charge:9.5nC
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor D4N60 HV MOSFET

Continuous Source Current:4A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:600V
Drain-Source On Resistance:2.1 ~ 2.5Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:2.6nC	Input Capacitance:590pF
Output Capacitance:55pF	Package Type:TO-252B	Reverse Recovery Charge:1000nC
Reverse Recovery Time:250ns	Reverse Transfer Capacitance:4.0pF	RoHS:Pb-free
Total Gate Charge:14.5nC	Turn-off Delay Time:34ns	Turn-off Fall Time:13ns
Turn-on Delay Time:14ns	Turn-on Rise Time:15ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F4N60 HV MOSFET

Continuous Drain Current:4A	Drain-Source Breakdown Voltage:600V	Drain-Source On-Resistance:2.1Ω
Gate-Source Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:590pF	Output Capacitance:55pF
Package:TO-220F	Reverse Transfer Capacitance:4.0pF	RoHS Compliance:Pb-free
Total Gate Charge:14.5nC

DonghaiSemiconductor 5N60 HV MOSFET

Certifications:RoHS	Diode Forward Current:5A	Diode Forward Voltage:1.5V
Drain-to-Source Breakdown Voltage:600V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:2.45Ω
Gate Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:4.7nC	Gate-to-Source Charge:3.5nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:550pF	Output Capacitance:50pF
Package:TO-220C	Reverse Recovery Charge:2.2μC	Reverse Recovery Time:270ns
Reverse Transfer Capacitance:1.4pF	Total Gate Charge:11.9nC	Turn-off Delay Time:15.8ns
Turn-off Fall Time:13.5ns	Turn-on Delay Time:8ns	Turn-on Rise Time:13ns

DonghaiSemiconductor F7N60 HV MOSFET

Body Diode Forward Voltage:≤1.5V	Continuous Drain Current:7A	Drain-Source Breakdown Voltage:600V
Drain-Source On Resistance:1.0 ~ 1.25Ω	Gate-Drain Charge:9.5nC	Gate-Source Charge:4.8nC
Gate-Source Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Input Capacitance:1121pF
Output Capacitance:96pF	Package:TO-220F	Reverse Recovery Charge:1920nC
Reverse Recovery Time:363ns	Reverse Transfer Capacitance:5.5pF	RoHS:Pb-free
Total Gate Charge:24nC	Turn-Off Delay Time:40ns	Turn-Off Fall Time:19ns
Turn-On Delay Time:18ns	Turn-On Rise Time:22ns	Zero Gate Voltage Drain Current:≤1μA

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