DONGHAI 东海半导体HV MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor 8N60 HV MOSFET

Certifications:RoHS	Continuous Source Current:8A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:0.98Ω; 1.2Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9.5nC	Gate-to-Source Charge:4.8nC
Input Capacitance:1121pF	Output Capacitance:96pF	Package:TO-220C
Reverse Recovery Charge:2000nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:5.5pF
Total Gate Charge:24nC	Turn-off Delay Time:40ns	Turn-off Fall Time:19ns
Turn-on Delay Time:18ns	Turn-on Rise Time:22ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D7N60 HV MOSFET

Continuous Drain Current:7A	Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:1.0 ~ 1.25Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:1121pF	Output Capacitance:96pF
Package:TO-252	Reverse Transfer Capacitance:5.5pF	RoHS:Pb-free
Total Gate Charge:24nC	Turn-off Delay Time:40ns	Turn-on Delay Time:18ns

DonghaiSemiconductor F8N60 HV MOSFET

Certifications:RoHS	Continuous Drain Current:8A	Continuous Source Current:8A
Drain-Source Breakdown Voltage:600V	Drain-Source Diode Forward Voltage:1.5V	Drain-Source On Resistance:0.98Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Input Capacitance:1121pF
Output Capacitance:96pF	Package:TO-220F	Reverse Recovery Charge:2000nC
Reverse Recovery Time:385ns	Reverse Transfer Capacitance:5.5pF	Total Gate Charge:24nC
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor 10N60 HV MOSFET

Continuous Drain Current:10A	Continuous Source Current:10A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:0.70Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC	Gate-to-Source Charge:8.0nC
Input Capacitance:1609pF	Output Capacitance:136pF	Package:TO-220C
Reverse Recovery Charge:2940nC	Reverse Recovery Time:499ns	Reverse Transfer Capacitance:7.5pF
Total Gate Charge:32nC	Turn-off Delay Time:49ns	Turn-off Fall Time:27ns
Turn-on Delay Time:26ns	Turn-on Rise Time:23ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor E16N60 HV MOSFET

Certifications:RoHS	Continuous Source Current:16A	Diode Forward Voltage:1.5V
Drain Source Breakdown Voltage:600V	Drain Source On Resistance:0.41Ω; 0.5Ω	Gate Source Threshold Voltage:2.0 ~ 4.0V
Gate to Body Leakage Current:±100nA	Gate to Drain Charge:19.5nC	Gate to Source Charge:11.5nC
Input Capacitance:2537pF	Output Capacitance:210pF	Package:TO-263
Reverse Diode dv/dt:3V/ns	Reverse Recovery Charge:5580nC	Reverse Recovery Time:520ns
Reverse Transfer Capacitance:10pF	Total Gate Charge:49nC	Turn off Delay Time:73ns
Turn off Fall Time:49ns	Turn on Delay Time:27ns	Turn on Rise Time:44.5ns
Voltage Change Rate:11V/ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 20N60 HV MOSFET

Certifications:RoHS	Continuous Source Current:20A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:0.35Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:22.9nC	Gate-to-Source Charge:13.5nC
Input Capacitance:2987pF	Output Capacitance:341pF	Package:TO-3P
Reverse Recovery Charge:6091nC	Reverse Recovery Time:525ns	Reverse Transfer Capacitance:23pF
Total Gate Charge:57nC	Turn-off Delay Time:78.7ns	Turn-off Fall Time:52ns
Turn-on Delay Time:36ns	Turn-on Rise Time:72ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F16N60 HV MOSFET

Certifications:RoHS	Continuous Drain Current:16A	Drain-Source Breakdown Voltage:600V
Drain-Source On Resistance:0.41 ~ 0.5Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:2502pF
Output Capacitance:210pF	Package Type:TO-220F	Reverse Transfer Capacitance:10.5pF
Total Gate Charge:49.3nC

DonghaiSemiconductor F10N60 HV MOSFET

Body Diode Forward Voltage:≤1.5V	Certifications:RoHS	Continuous Drain Current:10A
Continuous Source Current:10A	Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:0.70 ~ 0.90Ω
Gate-Source Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC
Gate-to-Source Charge:8.0nC	Input Capacitance:1609pF	Output Capacitance:136pF
Package:TO-220F	Reverse Recovery Charge:2940nC	Reverse Recovery Time:499ns
Reverse Transfer Capacitance:7.5pF	Total Gate Charge:32nC	Turn-off Delay Time:49ns
Turn-off Fall Time:27ns	Turn-on Delay Time:26ns	Turn-on Rise Time:23ns
Zero Gate Voltage Drain Current:≤1μA

DonghaiSemiconductor F20N60 HV MOSFET

Certifications:Pb-free	Continuous Drain Current:20A	Continuous Source Current:20A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:600V	Drain-Source On Resistance:0.35Ω
Gate-Source Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:22.3nC
Gate-to-Source Charge:13.5nC	Input Capacitance:2987pF	Output Capacitance:341pF
Package:TO-220F	Reverse Diode dv/dt:3V/µs	Reverse Recovery Charge:6091nC
Reverse Recovery Time:525ns	Reverse Transfer Capacitance:23pF	Total Gate Charge:57nC
Turn-off Delay Time:78.7ns	Turn-off Fall Time:52ns	Turn-on Delay Time:36ns
Turn-on Rise Time:72ns	Voltage Change Rate:8V/µs	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F12N60 HV MOSFET

Body Diode Forward Voltage:≤1.5V	Continuous Source Current:12A	Drain-Source Breakdown Voltage:600V
Drain-Source On Resistance:0.58Ω; 0.75Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:14.5nC	Gate-to-Source Charge:9.8nC	Input Capacitance:1980pF
Output Capacitance:170pF	Package:TO-220F	Reverse Recovery Charge:4009nC
Reverse Recovery Time:581ns	Reverse Transfer Capacitance:10pF	RoHS:Pb-free
Total Gate Charge:40nC	Turn-off Delay Time:63ns	Turn-off Fall Time:39ns
Turn-on Delay Time:27ns	Turn-on Rise Time:25ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D2N65 HV MOSFET

Continuous Source Current:2A	Diode Forward Voltage:≤1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:4.6 ~ 5.5Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:4.9nC	Gate-to-Source Charge:1.5nC	Input Capacitance:335pF
Output Capacitance:33pF	Package:TO-252	Reverse Recovery Charge:610nC
Reverse Recovery Time:187ns	Reverse Transfer Capacitance:3pF	Total Gate Charge:9.5nC
Turn-off Delay Time:29ns	Turn-off Fall Time:12ns	Turn-on Delay Time:11ns
Turn-on Rise Time:13ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F4N65 HV MOSFET

Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:2.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Input Capacitance:610pF	Output Capacitance:53pF	Package:TO-220F
Reverse Transfer Capacitance:3.5pF	RoHS:Pb-free	Total Gate Charge:14.5nC
Turn-off Delay Time:32ns	Turn-off Fall Time:11ns	Turn-on Delay Time:14ns
Turn-on Rise Time:16ns

DonghaiSemiconductor B2N65 HV MOSFET

Continuous Source Current:2A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:4.6Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:4.9nC	Gate-to-Source Charge:1.5nC	Input Capacitance:335pF
Output Capacitance:33pF	Package Type:TO-251B; TO-251	Reverse Recovery Charge:610nC
Reverse Recovery Time:187ns	Reverse Transfer Capacitance:3pF	Total Gate Charge:9.5nC
Turn-off Delay Time:29ns	Turn-off Fall Time:12ns	Turn-on Delay Time:11ns
Turn-on Rise Time:13ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor I4N65 HV MOSFET

Continuous Source Current:4A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:2.4Ω; 2.8Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:3nC	Input Capacitance:610pF
Output Capacitance:53pF	Package:TO-262	Reverse Recovery Charge:1200nC
Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF	Total Gate Charge:14.5nC
Turn-off Delay Time:32ns	Turn-off Fall Time:11ns	Turn-on Delay Time:14ns
Turn-on Rise Time:16ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D4N65 HV MOSFET

Certifications:RoHS	Continuous Source Current:4A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:2.4Ω; 2.8Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:3nC
Input Capacitance:610pF	Output Capacitance:53pF	Package Type:TO-252
Reverse Recovery Charge:1200nC	Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF
Total Gate Charge:14.5nC	Turn-off Delay Time:32ns	Turn-off Fall Time:11ns
Turn-on Delay Time:14ns	Turn-on Rise Time:16ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor B4N65 HV MOSFET

Continuous Source Current:4A	Diode Forward Voltage:≤1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:2.4 ~ 2.8Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:≤±100nA
Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:3nC	Input Capacitance:610pF
Output Capacitance:53pF	Package Type:TO-251B; TO-251	Reverse Recovery Charge:1200nC
Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF	Total Gate Charge:14.5nC
Turn-off Delay Time:32ns	Turn-off Fall Time:11ns	Turn-on Delay Time:14ns
Turn-on Rise Time:16ns	Zero Gate Voltage Drain Current:≤1μA; ≤100μA

DonghaiSemiconductor D5N65 HV MOSFET

Continuous Drain Current:4.5A	Continuous Source Current:5A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:2.4 ~ 2.8Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:≤±100nA	Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:3nC
Input Capacitance:610pF	Output Capacitance:53pF	Package:TO-252B
Reverse Recovery Charge:1200nC	Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF
RoHS:Pb-free	Total Gate Charge:14.5nC	Turn-off Delay Time:32ns
Turn-off Fall Time:11ns	Turn-on Delay Time:14ns	Turn-on Rise Time:16ns
Zero Gate Voltage Drain Current:≤1μA

DonghaiSemiconductor F5N65 HV MOSFET

Continuous Source Current:5A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:1.9Ω; 2.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:10.3nC	Gate-to-Source Charge:2.4nC	Input Capacitance:615pF
Output Capacitance:55pF	Package:TO-220F	Product Model:F5N65
Reverse Recovery Charge:1600nC	Reverse Recovery Time:390ns	Reverse Transfer Capacitance:6.88pF
RoHS:Pb-free	Total Gate Charge:17.3nC	Turn-off Delay Time:25ns
Turn-off Fall Time:9.5ns	Turn-on Delay Time:13ns	Turn-on Rise Time:8.8ns
Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 5N65C HV MOSFET

Certifications:RoHS	Continuous Source Current:5A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:2.3 ~ 2.7Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:≤±100nA	Gate-to-Drain Charge:6.5nc	Gate-to-Source Charge:3nc
Input Capacitance:610pF	Output Capacitance:53pF	Package Type:TO-220C
Reverse Recovery Charge:1200nc	Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF
Total Gate Charge:14.5nc	Turn-off Delay Time:32ns	Turn-off Fall Time:11ns
Turn-on Delay Time:14ns	Turn-on Rise Time:16ns	Zero Gate Voltage Drain Current:≤1μA

DonghaiSemiconductor B5N65C HV MOSFET

Certifications:RoHS	Continuous Source Current:5A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:1.9Ω; 2.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:10.3nC	Gate-to-Source Charge:2.4nC
Input Capacitance:615pF	Output Capacitance:55pF	Package:TO-251B
Reverse Recovery Charge:1600nC	Reverse Recovery Time:390ns	Reverse Transfer Capacitance:6.88pF
Total Gate Charge:17.3nC	Turn-off Delay Time:25ns	Turn-off Fall Time:9.5ns
Turn-on Delay Time:13ns	Turn-on Rise Time:8.8ns	Zero Gate Voltage Drain Current:1.0μA; 100μA

DonghaiSemiconductor F5N65C HV MOSFET

Continuous Drain Current:5A	Continuous Source Current:5A	Diode Forward Voltage:1.5V(Max)
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:2.3Ω(Typ); 2.7Ω(Max)	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA(Max) at VGS=±30V, VDS=0V	Gate-to-Drain Charge:6.5nC	Gate-to-Source Charge:3nC
Input Capacitance:610pF	Mark Name:F5N65C	Output Capacitance:53pF
Package:TO-220F	Packaging:Tube; 1000/box	Product Model:F5N65
Reverse Recovery Charge:1200nC	Reverse Recovery Time:256ns	Reverse Transfer Capacitance:3.5pF
RoHS Compliance:Pb-free	Total Gate Charge:14.5nC	Turn-off Delay Time:32ns
Turn-off Fall Time:11ns	Turn-on Delay Time:14ns	Turn-on Rise Time:16ns
Zero Gate Voltage Drain Current:1μA(Max) at VDS=650V, VGS=0V, TC=25℃; 100μA(Max) at VDS=520V, VGS=0V, TC=125℃

DonghaiSemiconductor 7N65 HV MOSFET

Certifications:RoHS	Diode Forward Current:7A	Diode Forward Voltage:1.5V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:1.28Ω(Typ); 1.4Ω(Max)
Gate Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:7.6nC	Gate-to-Source Charge:6.1nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1061pF	Output Capacitance:86pF
Package Type:TO-220C	Reverse Recovery Charge:3.4µC	Reverse Recovery Time:300ns
Reverse Transfer Capacitance:3.3pF	Total Gate Charge:21.5nC	Turn-off Delay Time:27.5ns
Turn-off Fall Time:15.5ns	Turn-on Delay Time:11.3ns	Turn-on Rise Time:16ns

DonghaiSemiconductor I7N65 HV MOSFET

Diode Forward Current:7A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source Leakage Current:1μA	Drain-Source On-State Resistance:1.28Ω	Drain-Source On-State Resistance Max:1.4Ω
Gate-Drain Charge:7.6nC	Gate-Source Charge:6.1nC	Gate-Source Leakage Current:±100nA
Gate-Source Threshold Voltage:2 ~ 4V	Input Capacitance:1061pF	Output Capacitance:86pF
Package:TO-262	Reverse Recovery Charge:3.4uC	Reverse Recovery Time:300nS
Reverse Transfer Capacitance:3.3pF	Total Gate Charge:21.5nC	Turn-off Delay Time:27.5nS
Turn-off Fall Time:15.5nS	Turn-on Delay Time:11.3nS	Turn-on Rise Time:16nS

DonghaiSemiconductor F7N65 HV MOSFET

Certifications:RoHS	Continuous Drain Current:7A	Continuous Source Current:7A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:1.2 ~ 1.4Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Drain Charge:8.6nC	Gate-to-Source Charge:6.3nC
Input Capacitance:1125pF	Output Capacitance:90pF	Package:TO-220F
Reverse Recovery Charge:2000nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:4.2pF
Total Gate Charge:26nC	Turn-off Delay Time:39ns	Turn-off Fall Time:21ns
Turn-on Delay Time:23ns	Turn-on Rise Time:25ns

DonghaiSemiconductor B7N65 HV MOSFET

Continuous Drain Current:7A	Continuous Source Current:7A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On-Resistance:1.2 ~ 1.4Ω	Gate-Source Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9.5nC	Gate-to-Source Charge:5.1nC
Input Capacitance:1130pF	Output Capacitance:93pF	Package:TO-251B
Product Model:B7N65	Reverse Recovery Charge:2000nC	Reverse Recovery Time:385ns
Reverse Transfer Capacitance:5.5pF	RoHS:Pb-free	Total Gate Charge:24nC
Turn-off Delay Time:42ns	Turn-off Fall Time:19ns	Turn-on Delay Time:19ns
Turn-on Rise Time:21ns	Zero Gate Voltage Drain Current:1μA

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