DONGHAI 东海半导体HV MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor DHD7N65 HV MOSFET

Certifications:RoHS	Continuous Source Current:7A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:1.2 ~ 1.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9.5nC	Gate-to-Source Charge:5.1nC
Input Capacitance:1130pF	Output Capacitance:93pF	Package:TO-252
Reverse Recovery Charge:2000nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:5.5pF
Total Gate Charge:24nC	Turn-off Delay Time:42ns	Turn-off Fall Time:19ns
Turn-on Delay Time:19ns	Turn-on Rise Time:21ns	Zero Gate Voltage Drain Current:≤1μA; ≤100μA

DonghaiSemiconductor 8N65 HV MOSFET

Certifications:RoHS	Continuous Source Current:8A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:1.2 ~ 1.4Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:9.5nC	Gate-to-Source Charge:5.1nC
Input Capacitance:1130pF	Output Capacitance:93pF	Package:TO-220
Reverse Recovery Charge:2000nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:5.5pF
Total Gate Charge:24nC	Turn-off Delay Time:42ns	Turn-off Fall Time:19ns
Turn-on Delay Time:19ns	Turn-on Rise Time:21ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F8N65 HV MOSFET

Continuous Source Current:8A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:1.15Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:9.5nC	Gate-to-Source Charge:4.8nC	Input Capacitance:1107pF
Output Capacitance:95pF	Package Type:TO-220F	Reverse Recovery Charge:1900nC
Reverse Recovery Time:385ns	Reverse Transfer Capacitance:6.1pF	Total Gate Charge:23.7nC
Turn-off Delay Time:44ns	Turn-off Fall Time:18ns	Turn-on Delay Time:20ns
Turn-on Rise Time:21ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor D9N65 HV MOSFET

Certifications:RoHS	Diode Forward Current:9A	Diode Forward Voltage:1.5V
Drain Current:9A	Drain-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:≤1μA
Drain-to-Source On-State Resistance:0.86Ω	Gate Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:7.1nC
Gate-to-Source Charge:8.6nC	Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:1622pF
Output Capacitance:115pF	Package:TO-252B	Reverse Recovery Charge:4.4µC
Reverse Recovery Time:335ns	Reverse Transfer Capacitance:2.9pF	Total Gate Charge:26.7nC
Turn-off Delay Time:32ns	Turn-off Fall Time:13ns	Turn-on Delay Time:14ns
Turn-on Rise Time:13ns

DonghaiSemiconductor 10N65 HV MOSFET

Certifications:RoHS	Continuous Drain Current:10A	Continuous Source Current:10A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.86Ω
Gate-Source Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC
Gate-to-Source Charge:8.0nC	Input Capacitance:1642pF	Output Capacitance:128pF
Package:TO-220	Reverse Recovery Charge:3250nC	Reverse Recovery Time:530ns
Reverse Transfer Capacitance:7.0pF	Total Gate Charge:32nC	Turn-off Delay Time:53ns
Turn-off Fall Time:24ns	Turn-on Delay Time:27ns	Turn-on Rise Time:22ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor I10N65 HV MOSFET

Certifications:RoHS	Continuous Source Current:10A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.86 ~ 1.0Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC	Gate-to-Source Charge:8.0nC
Input Capacitance:1642pF	Output Capacitance:128pF	Package Type:TO-262; TO-220
Reverse Recovery Charge:3250nC	Reverse Recovery Time:530ns	Reverse Transfer Capacitance:7.0pF
Total Gate Charge:32nC	Turn-off Delay Time:53ns	Turn-off Fall Time:24ns
Turn-on Delay Time:27ns	Turn-on Rise Time:22ns	Zero Gate Voltage Drain Current:≤1μA; ≤100μA

DonghaiSemiconductor F10N65 HV MOSFET

Certifications:RoHS	Diode Forward Current:10A	Diode Forward Voltage:1.5V
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage Current:1μA	Drain-to-Source on-state Resistance:0.79 ~ 1Ω
Gate Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:7.3nC	Gate-to-Source Charge:8nC
Gate-to-Source Leakage Current:±100nA	Input Capacitance:1567pF	Output Capacitance:135pF
Package Type:TO-220F	Reverse Recovery Charge:4μC	Reverse Recovery Time:335ns
Reverse Transfer Capacitance:3.4pF	Total Gate Charge:26.6nC	Turn-off Delay Time:69.8ns
Turn-off Fall Time:31ns	Turn-on Delay Time:24.3ns	Turn-on Rise Time:28.5ns

DonghaiSemiconductor 12N65 HV MOSFET

Certifications:RoHS	Continuous Drain Current:12A	Continuous Source Current:12A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.66Ω
Drain-Source On Resistance Max:0.8Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:14nC	Gate-to-Source Charge:10nC	Input Capacitance:1993pF
Output Capacitance:160pF	Package:TO-220	Reverse Recovery Charge:4310nC
Reverse Recovery Time:651ns	Reverse Transfer Capacitance:9.5pF	Total Gate Charge:40nC
Turn-off Delay Time:64ns	Turn-off Fall Time:45ns	Turn-on Delay Time:28ns
Turn-on Rise Time:26ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F12N65 HV MOSFET

Continuous Source Current:12A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:0.66Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:14nC	Gate-to-Source Charge:10nC	Input Capacitance:1993pF
Output Capacitance:160pF	Package Type:TO-220F	Reverse Recovery Charge:4310nC
Reverse Recovery Time:655ns	Reverse Transfer Capacitance:9.5pF	RoHS Compliance:Pb-free
Total Gate Charge:40nC	Turn-off Delay Time:64ns	Turn-off Fall Time:45ns
Turn-on Delay Time:28ns	Turn-on Rise Time:26ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor I12N65 HV MOSFET

Continuous Source Current:12A	Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V
Drain-Source On Resistance:0.66Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:14nC	Gate-to-Source Charge:10nC	Input Capacitance:1993pF
Output Capacitance:160pF	Package:TO-220	Reverse Recovery Charge:4310nC
Reverse Recovery Time:651ns	Reverse Transfer Capacitance:9.5pF	RoHS:Pb-free
Total Gate Charge:40nC	Turn-off Delay Time:64ns	Turn-off Fall Time:45ns
Turn-on Delay Time:28ns	Turn-on Rise Time:26ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 12N65D HV MOSFET

Continuous Drain Current:12A	Continuous Source Current:12A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.66Ω	Gate-Source Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:14nC	Gate-to-Source Charge:10nC
Input Capacitance:1993pF	Output Capacitance:160pF	Package Type:TO-220
Product Model:12N65D	Reverse Recovery Charge:4310nC	Reverse Recovery Time:651ns
Reverse Transfer Capacitance:9.5pF	Total Gate Charge:40nC	Turn-off Delay Time:64ns
Turn-off Fall Time:45ns	Turn-on Delay Time:28ns	Turn-on Rise Time:26ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor 14N65 HV MOSFET

Continuous Drain Current:14A	Continuous Source Current:14A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.60Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Drain Charge:14nC	Gate-to-Source Charge:10nC	Input Capacitance:1993pF
Output Capacitance:160pF	Package:TO-220; TO-220F	Reverse Recovery Charge:4310nC
Reverse Recovery Time:655ns	Reverse Transfer Capacitance:9.5pF	RoHS Compliance:Pb-free
Total Gate Charge:40nC	Turn-off Delay Time:64ns	Turn-off Fall Time:45ns
Turn-on Delay Time:28ns	Turn-on Rise Time:26ns

DonghaiSemiconductor 16N65 HV MOSFET

Continuous Drain Current:16A	Continuous Source Current:16A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.46Ω	Fall Time:42.3ns
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:20.7nC
Gate-to-Source Charge:11.5nC	Input Capacitance:2637pF	Mounting Type:Through Hole
Operating Temperature:-55 ~ 175℃	Output Capacitance:200pF	Package:TO-220
Polarity:N-Channel	Reverse Recovery Charge:5960nC	Reverse Recovery Time:552ns
Reverse Transfer Capacitance:10.4pF	Rise Time:41.4ns	Total Gate Charge:50.5nC
Transistor Configuration:Single	Turn-Off Delay Time:65.6ns	Turn-On Delay Time:26ns
Vgs Maximum:±30V	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor F14N65 HV MOSFET

Continuous Drain Current:14A	Continuous Source Current:14A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.60Ω	Gate-Source Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Input Capacitance:1993pF	Output Capacitance:160pF
Package:TO-220F	Reverse Recovery Charge:4310nC	Reverse Recovery Time:655ns
Reverse Transfer Capacitance:9.5pF	Total Gate Charge:40nC	Turn-Off Delay Time:64ns
Turn-Off Fall Time:45ns	Turn-On Delay Time:28ns	Turn-On Rise Time:26ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor E16N65 HV MOSFET

Certifications:RoHS	Continuous Drain Current:16A	Continuous Source Current:16A
Diode Forward Voltage:1.5V	Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.46Ω
Drain-Source On Resistance (Max):0.55Ω	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA
Gate-to-Drain Charge:20.7nC	Gate-to-Source Charge:11.5nC	Input Capacitance:2637pF
Output Capacitance:200pF	Package:TO-263	Reverse Recovery Charge:5960nC
Reverse Recovery Time:552ns	Reverse Transfer Capacitance:10.4pF	Total Gate Charge:50.5nC
Turn-off Delay Time:65.6ns	Turn-off Fall Time:42.3ns	Turn-on Delay Time:26ns
Turn-on Rise Time:41.4ns	Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F16N65 HV MOSFET

Continuous Drain Current:16A	Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.50Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Input Capacitance:2637pF	Output Capacitance:200pF
Package:TO-220F	Reverse Transfer Capacitance:10.4pF	Total Gate Charge:50.5nC
Turn-off Delay Time:65.6ns	Turn-off Fall Time:42.3ns	Turn-on Delay Time:26ns
Turn-on Rise Time:41.4ns

DonghaiSemiconductor F18N65 HV MOSFET

Certifications:RoHS	Continuous Source Current:20A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.42Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:22.9nC	Gate-to-Source Charge:13.3nC
Input Capacitance:2983pF	Output Capacitance:316pF	Package:TO-220F
Reverse Recovery Charge:6853nC	Reverse Recovery Time:584ns	Reverse Transfer Capacitance:20pF
Total Gate Charge:58nC	Turn-off Delay Time:78.7ns	Turn-off Fall Time:58.7ns
Turn-on Delay Time:36ns	Turn-on Rise Time:74.7ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor 20N65D HV MOSFET

Diode Forward Current:≤20A	Diode Forward Voltage:≤1.5V	Drain Current:20A
Drain-to-Source Breakdown Voltage:650V	Drain-to-Source Leakage:≤1μA	Drain-to-Source on-state Resistance:0.45Ω
Gate Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:15.5nC	Gate-to-Source Charge:16.2nC
Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:3050pF	Output Capacitance:213pF
Package:TO-3PN	Reverse Recovery Charge:9.3µC	Reverse Recovery Time:470ns
Reverse Transfer Capacitance:10pF	RoHS:Pb-free	Total Gate Charge:52.7nC
Turn-off Delay Time:66.8ns	Turn-off Fall Time:38.5ns	Turn-on Delay Time:23.3ns
Turn-on Rise Time:40ns

DonghaiSemiconductor 20N65 HV MOSFET

Certifications:RoHS	Diode Forward Current:20A	Diode Forward Voltage:≤1.5V
Drain-Source Breakdown Voltage:650V	Drain-Source Leakage Current:≤1μA	Drain-Source On-State Resistance:0.45Ω
Drain-Source On-State Resistance Max:0.5Ω	Gate-Source Threshold Voltage:2 ~ 4V	Gate-to-Drain Charge:15.5nC
Gate-to-Source Charge:16.2nC	Gate-to-Source Leakage Current:≤±100nA	Input Capacitance:3050pF
Output Capacitance:213pF	Package:TO-220C	Rated Drain Current:20A
Reverse Recovery Charge:9.3uC	Reverse Recovery Time:470nS	Reverse Transfer Capacitance:10pF
Total Gate Charge:52.7nC	Turn-off Delay Time:66.8nS	Turn-off Fall Time:38.5nS
Turn-on Delay Time:23.3nS	Turn-on Rise Time:40nS

DonghaiSemiconductor F4N70 HV MOSFET

Breakdown Voltage:700V	Continuous Drain Current:4A	Continuous Source Current:4A
Diode Forward Voltage:1.5V	Drain-Source On Resistance:2.65Ω	Drain-Source On Resistance Max:3.3Ω
Gate Threshold Voltage:2.0 ~ 4.0V	Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:5.1nC
Gate-to-Source Charge:3.0nC	Input Capacitance:606pF	Output Capacitance:48pF
Package:TO-220F	Reverse Recovery Charge:1470nC	Reverse Recovery Time:325ns
Reverse Transfer Capacitance:2.7pF	Total Gate Charge:12.7nC	Turn-off Delay Time:30ns
Turn-off Fall Time:9ns	Turn-on Delay Time:14ns	Turn-on Rise Time:15ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor F20N65 HV MOSFET

Body Diode Forward Voltage:1.5V	Continuous Drain Current:20A	Continuous Source Current:20A
Drain-Source Breakdown Voltage:650V	Drain-Source On Resistance:0.39Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-Drain Charge:22.9nC	Gate-Source Charge:13.3nC	Gate-to-Body Leakage Current:±100nA
Input Capacitance:2983pF	Output Capacitance:316pF	Package:TO-220F
Reverse Recovery Charge:6853nC	Reverse Recovery Time:584ns	Reverse Transfer Capacitance:20pF
RoHS:Pb-free	Total Gate Charge:58nC	Turn-Off Delay Time:78.7ns
Turn-Off Fall Time:58.7ns	Turn-On Delay Time:36ns	Turn-On Rise Time:74.7ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor B4N70 HV MOSFET

Certifications:RoHS	Continuous Source Current:4A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:700V	Drain-Source On Resistance:2.55Ω ~ 3.3Ω	Gate Threshold Voltage:2V ~ 4V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:5.1nC	Gate-to-Source Charge:3nC
Input Capacitance:606pF	Output Capacitance:48pF	Package:TO-251B
Reverse Recovery Charge:1470nC	Reverse Recovery Time:325ns	Reverse Transfer Capacitance:2.7pF
Total Gate Charge:12.7nC	Turn-off Delay Time:30ns	Turn-off Fall Time:9ns
Turn-on Delay Time:14ns	Turn-on Rise Time:15ns	Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D4N70 HV MOSFET

Continuous Drain Current:4A	Continuous Source Current:4A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:700V	Drain-Source On Resistance:2.8 ~ 3.3Ω	Gate Threshold Voltage:2.0 ~ 4.0V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:5.1nC	Gate-to-Source Charge:3.0nC
Input Capacitance:606pF	Output Capacitance:48pF	Package:TO-252
Reverse Recovery Charge:1470nC	Reverse Recovery Time:325ns	Reverse Transfer Capacitance:2.7pF
RoHS:Pb-free	Total Gate Charge:12.7nC	Turn-off Delay Time:30ns
Turn-off Fall Time:9ns	Turn-on Delay Time:14ns	Turn-on Rise Time:15ns
Zero Gate Voltage Drain Current:1μA; 100μA

DonghaiSemiconductor D7N70 HV MOSFET

Continuous Drain Current:7A	Continuous Source Current:7A	Diode Forward Voltage Max:1.5V
Drain Source Breakdown Voltage:700V	Drain Source On Resistance:1.35Ω	Gate Source Threshold Voltage:2.0 ~ 4.0V
Gate to Body Leakage Current:±100nA	Gate to Drain Charge:12nC	Gate to Source Charge:5.2nC
Input Capacitance:1102pF	Output Capacitance:88pF	Package:TO-252
Reverse Recovery Charge:2300nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:4.5pF
RoHS:Pb-free	Total Gate Charge:26nC	Turn Off Delay Time:39ns
Turn Off Fall Time:11ns	Turn On Delay Time:19ns	Turn On Rise Time:16ns
Zero Gate Voltage Drain Current:1μA

DonghaiSemiconductor DHD7N70 HV MOSFET

Certifications:RoHS	Continuous Source Current:7A	Diode Forward Voltage:1.5V
Drain-Source Breakdown Voltage:700V	Drain-Source On Resistance:1.35Ω	Gate Threshold Voltage:2 ~ 4V
Gate-to-Body Leakage Current:±100nA	Gate-to-Drain Charge:12nC	Gate-to-Source Charge:5.2nC
Input Capacitance:1102pF	Output Capacitance:88pF	Package Type:TO-252B
Reverse Recovery Charge:2300nC	Reverse Recovery Time:385ns	Reverse Transfer Capacitance:4.5pF
Total Gate Charge:26nC	Turn-off Delay Time:39ns	Turn-off Fall Time:11ns
Turn-on Delay Time:19ns	Turn-on Rise Time:16ns	Zero Gate Voltage Drain Current:1μA

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