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DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor DGC75F65M IGBT

集电极电流:75A	栅极阈值电压:4.5 ~ 7V	用途：传感器封装:TO-247-3L
Collector-Emitter Breakdown Voltage:650V	Collector-Emitter Leakage Current:25μA; 2000μA	Collector-Emitter Saturation Voltage:1.7 ~ 2.2V
Diode Forward Voltage:1.7 ~ 2.2V; 1.3V	Diode Junction-to-Case Thermal Resistance:0.58°C/W	Diode Peak Reverse Recovery Current:2.2A
Diode Reverse Recovery Charge:126nC	Diode Reverse Recovery Time:105ns	Fall Time:95ns; 147ns
Gate Charge:187nC	Gate-to-Emitter Leakage Current:±250nA	Input Capacitance:5474pF
Junction-to-Ambient Thermal Resistance:40°C/W	Junction-to-Case Thermal Resistance:0.4°C/W	Output Capacitance:243pF
Reverse Transfer Capacitance:35pF	Rise Time:125ns; 119ns	Total Switching Energy:4.56mJ; 5.02mJ
Turn-off Delay Time:143ns; 169ns	Turn-off Energy:1.91mJ; 2.33mJ	Turn-on Delay Time:41ns; 37ns
Turn-on Energy:2.65mJ; 2.69mJ

DonghaiSemiconductor DGC60F65M IGBT

栅极阈值电压:5 ~ 7V	用途：传感器封装:TO247-3L	Collector-emitter saturation voltage:1.9V
Collector-to-Emitter Breakdown Voltage:650V	Collector-to-Emitter Leakage Current:≤1μA	Diode Thermal Resistance Junction to Case:0.48°C/W
Diode forward voltage:1.65V	Diode peak reverse recovery current:2.2A	Diode reverse recovery charge:126nC
Diode reverse recovery time:105ns	Fall time:74ns	Gate charge:106nC
Gate-to-Emitter Leakage Current:≤±100nA	IGBT Thermal Resistance Junction to Ambient:32.5°C/W	IGBT Thermal Resistance Junction to Case:0.35°C/W
Input Capacitance:3250pF	Output Capacitance:135pF	Rated Current:60A
Rated Voltage:650V	Reverse Transfer Capacitance:35pF	Rise time:104ns
Total switching energy:2.67mJ	Transconductance:67S	Turn-off delay time:95ns
Turn-off energy:1.10mJ	Turn-on delay time:38ns	Turn-on energy:1.57mJ

DonghaiSemiconductor DGF30F65M2 IGBT

栅极阈值电压:4 ~ 7V	用途：传感器封装:TO-220F	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:≤25μA	Collector-Emitter Saturation Voltage:2.0V	Diode Forward Voltage:1.5V
Diode Peak Reverse Recovery Current:3.0A	Diode Reverse Recovery Charge:334nC	Diode Reverse Recovery Time:209ns
Fall Time:81ns	Gate Charge:45nC	Gate-Emitter Leakage Current:≤±250nA
Input Capacitance:1340pF	Integrated Diode:FRD	Junction to Ambient Thermal Resistance:62.5°C/W
Junction to Case Thermal Resistance:3.5°C/W	Output Capacitance:89pF	Rated Current:30A
Rated Voltage:650V	Reverse Transfer Capacitance:15pF	Rise Time:30ns
Total Switching Energy:0.70mJ	Turn-off Delay Time:30ns	Turn-off Energy:0.31mJ
Turn-on Delay Time:13ns	Turn-on Energy:0.39mJ

DonghaiSemiconductor DGC120F65M2 IGBT

集电极电流:120A	栅极阈值电压:4 ~ 6.5V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:650V	Collector-Emitter Leakage Current:40μA	Collector-Emitter Saturation Voltage:1.6 ~ 2.2V
Diode Forward Voltage:1.5 ~ 2.4V	Diode Peak Rate of Fall of Reverse Recovery Current:-91A/μs	Diode Peak Reverse Recovery Current:10.7A
Diode Reverse Recovery Charge:760nC	Diode Reverse Recovery Time:117ns	Fall Time:147 ~ 172ns
Gate Charge:295nC	Gate-Emitter Leakage Current:±250nA	Input Capacitance:10105pF
Output Capacitance:380pF	Reverse Transfer Capacitance:110pF	Rise Time:168 ~ 180ns
Thermal Resistance Junction to Ambient:40°C/W	Thermal Resistance Junction to Case:0.4 ~ 0.45°C/W	Total Switching Energy:9.91 ~ 10.5mJ
Turn-Off Delay Time:160 ~ 180ns	Turn-Off Energy:4.07 ~ 4.66mJ	Turn-On Delay Time:44 ~ 46ns
Turn-On Energy:5.84mJ

DonghaiSemiconductor DGCQ160F65L2 IGBT

栅极阈值电压:4 ~ 7V	用途：传感器封装:TO247P-4L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:40μA; 5000μA	Collector-Emitter Saturation Voltage:1.8 ~ 2.4V	Diode Forward Voltage:1.6 ~ 1.9V
Diode Peak Rate of Fall of Reverse Recovery Current:-461A/μs	Diode Peak Reverse Recovery Current:16A	Diode Reverse Recovery Charge:594nC
Diode Reverse Recovery Time:70ns	Diode Thermal Resistance Junction to Case-Sink:0.4°C/W	Fall Time:34 ~ 40ns
Gate Charge:379nC	Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Ambient:40°C/W
IGBT Thermal Resistance Junction to Case-Sink:0.18°C/W	Input Capacitance:12080pF	Output Capacitance:499pF
Rated Current:160A	Rated Voltage:650V	Reverse Transfer Capacitance:138pF
Rise Time:87 ~ 91ns	Total Switching Energy:7.2 ~ 8.4mJ	Transconductance:129S
Turn-Off Delay Time:228 ~ 273ns	Turn-Off Energy:1.9 ~ 2.7mJ	Turn-On Delay Time:104 ~ 113ns
Turn-On Energy:5.3 ~ 5.7mJ

DonghaiSemiconductor DGCU40H65F7 IGBT

栅极阈值电压:4.5 ~ 6.0 V	用途：传感器封装:ITO247-3L	Collector-Emitter Breakdown Voltage:650 V
Collector-Emitter Leakage Current:25 μA	Collector-Emitter Saturation Voltage:1.85 V	Diode Forward Voltage:1.7 V
Diode Peak Fall Rate of Reverse Recovery:-89 A/μs	Diode Peak Reverse Recovery Current:4.6 A	Diode Reverse Recover Charge:348 nC
Diode Reverse Recovery Time:116 ns	Diode Thermal Resistance Junction-to-Case:2.33 °C/W	Fall Time:26 ns
Gate Charge:66 nC	Gate-Emitter Leakage Current:250 nA	Input Capacitance:2297 pF
Junction-to-Ambient Thermal Resistance:65 °C/W	Junction-to-Case Thermal Resistance:1.26 °C/W	Output Capacitance:85 pF
Rated Collector Current:40 A	Reverse Transfer Capacitance:13 pF	Rise Time:45 ns
Total Switching Energy:1.22 mJ	Turn-Off Delay Time:88 ns	Turn-Off Energy:0.33 mJ
Turn-On Delay Time:15 ns	Turn-On Energy:0.89 mJ

DonghaiSemiconductor DGF15F65T7 IGBT

栅极阈值电压:4.0 ~ 5.6V	用途：传感器封装:TO-220F	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current 175°C:2000μA	Collector-Emitter Leakage Current 25°C:25μA	Collector-Emitter Saturation Voltage:1.5V
Diode Forward Voltage 175°C:1.2V	Diode Forward Voltage 25°C:1.4 ~ 1.7V	Diode Peak Reverse Recovery Current:16.5A
Diode Reverse Recover Charge:0.75μC	Diode Reverse Recovery Time:108ns	Diode Thermal Resistance Junction to Case:5.4°C/W
Fall Time 150°C:129ns	Fall Time 25°C:75ns	Gate Charge:65nC
Gate-Emitter Leakage Current:250nA	Input Capacitance:767pF	Output Capacitance:26pF
Reverse Transfer Capacitance:12pF	Rise Time 150°C:11ns	Rise Time 25°C:9ns
Thermal Resistance Junction to Ambient:65°C/W	Thermal Resistance Junction to Case:3.0°C/W	Total Switching Energy 150°C:1.06mJ
Total Switching Energy 25°C:0.60mJ	Turn-Off Delay Time 150°C:82ns	Turn-Off Delay Time 25°C:77ns
Turn-Off Energy 150°C:0.29mJ	Turn-Off Energy 25°C:0.19mJ	Turn-On Delay Time 150°C:9ns
Turn-On Delay Time 25°C:10ns	Turn-On Energy 150°C:0.77mJ	Turn-On Energy 25°C:0.41mJ

DonghaiSemiconductor DGN40H65F7 IGBT

栅极阈值电压:3.8 ~ 5.4V	用途：传感器封装:TO-3PN	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:25μA; 2000μA	Collector-Emitter Saturation Voltage:1.6V; 2.0V	Diode Forward Voltage:1.7V; 1.3V
Diode Peak Fall Rate of Reverse Recovery:-89A/μs	Diode Peak Reverse Recovery Current:4.6A	Diode Reverse Recover Charge:348nC
Diode Reverse Recovery Time:116ns	Fall Time:26ns; 33ns	Gate Charge:66nC
Gate-Emitter Leakage Current:±250nA	Input Capacitance:2297pF	Output Capacitance:85pF
Reverse Transfer Capacitance:13pF	Rise Time:45ns; 48ns	Thermal Resistance Junction to Ambient:40°C/W
Thermal Resistance Junction to Case:0.74°C/W; 1.48°C/W	Total Switching Energy:1.22mJ; 1.81mJ	Turn-Off Delay Time:88ns; 101ns
Turn-Off Energy:0.33mJ; 0.39mJ	Turn-On Delay Time:15ns; 14ns	Turn-On Energy:0.89mJ; 1.42mJ

DonghaiSemiconductor DGC40F65T7 IGBT

栅极阈值电压:4.5V ~ 6.1V	用途：传感器封装:TO247-3L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:25μA	Collector-Emitter Saturation Voltage:1.5V; 1.9V	Diode Forward Voltage:1.6V; 2.0V
Diode Peak Reverse Recovery Current:15.5A	Diode Reverse Recover Charge:0.65μC	Diode Reverse Recovery Time:80ns
Diode Thermal Resistance Junction to Case:1.03°C/W	Fall Time:17ns	Gate Charge:177nC
Gate-Emitter Leakage Current:±250nA	Input Capacitance:2174pF	Output Capacitance:57pF
Reverse Transfer Capacitance:28pF	Rise Time:13ns	Thermal Resistance Junction to Ambient:40°C/W
Thermal Resistance Junction to Case:0.74°C/W	Total Switching Energy:1.77mJ	Turn-Off Delay Time:240ns
Turn-Off Energy:0.69mJ	Turn-On Delay Time:17ns	Turn-On Energy:1.08mJ

DonghaiSemiconductor DGCF60F65F7 IGBT

集电极电流:60A	栅极阈值电压:5.8V	用途：传感器封装:TO247-4L
Collector-Emitter Breakdown Voltage:650V	Collector-Emitter Leakage Current:25μA	Collector-Emitter Saturation Voltage:1.85V
Diode Forward Voltage:1.6V	Diode Peak Reverse Recovery Current:24A	Diode Reverse Recover Charge:910nC
Diode Reverse Recovery Time:73ns	Diode Thermal Resistance Junction to Case:0.50°C/W	Fall Time:20ns
Gate Charge:92nC	Gate-Emitter Leakage Current:±250nA	Input Capacitance:3321pF
Junction-to-Case Thermal Resistance:0.53°C/W	Output Capacitance:158pF	Reverse Transfer Capacitance:15pF
Rise Time:19ns	Thermal Resistance Junction to Ambient:40°C/W	Total Switching Energy:1.53mJ
Turn-Off Delay Time:85ns	Turn-Off Energy:0.42mJ	Turn-On Delay Time:22ns
Turn-On Energy:1.11mJ

DonghaiSemiconductor DGCU60H65F6 IGBT

栅极阈值电压:5.6V	用途：传感器封装:ITO247-3L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current (175°C):2000μA	Collector-Emitter Leakage Current (25°C):25μA	Collector-Emitter Saturation Voltage:2.0V; 2.6V
Diode Forward Voltage (175°C):1.3V	Diode Forward Voltage (25°C):1.6V	Diode Peak Reverse Recovery Current:18A
Diode Reverse Recover Charge:0.88μC	Diode Reverse Recovery Time:109ns	Diode Thermal Resistance Junction to Case:1.53°C/W
Fall Time (150°C):53ns	Fall Time (25°C):37ns	Gate Charge:103nC
Gate-Emitter Leakage Current:±250nA	Input Capacitance:3187pF	Output Capacitance:166pF
Reverse Transfer Capacitance:38pF	Rise Time (150°C):79ns	Rise Time (25°C):80ns
Thermal Resistance Junction to Ambient:40°C/W	Thermal Resistance Junction to Case:0.75°C/W	Total Switching Energy (150°C):3.49mJ
Total Switching Energy (25°C):2.54mJ	Turn-Off Delay Time (150°C):94ns	Turn-Off Delay Time (25°C):86ns
Turn-Off Energy (150°C):0.96mJ	Turn-Off Energy (25°C):0.70mJ	Turn-On Delay Time (150°C):27ns
Turn-On Delay Time (25°C):44ns	Turn-On Energy (150°C):2.53mJ	Turn-On Energy (25°C):1.84mJ

DonghaiSemiconductor DGN60H65F6 IGBT

栅极阈值电压:4.8 ~ 6.4V	用途：传感器封装:TO-3PN	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:≤25μA	Collector-Emitter Saturation Voltage:2.0V	Diode Forward Voltage:1.6V
Diode Peak Reverse Recovery Current:15.5A	Diode Reverse Recover Charge:0.56μC	Diode Reverse Recovery Time:57ns
Diode Thermal Resistance Junction to Case:1.03°C/W	Fall Time:59ns	Gate Charge:101nC
Gate-Emitter Leakage Current:≤±250nA	IGBT Thermal Resistance Junction to Case:0.52°C/W	Input Capacitance:3190pF
Output Capacitance:122pF	Rated Current:60A	Reverse Transfer Capacitance:27pF
Rise Time:70ns	Thermal Resistance Junction to Ambient:40°C/W	Total Switching Energy:2.58mJ
Turn-Off Delay Time:63ns	Turn-Off Energy:0.67mJ	Turn-On Delay Time:42ns
Turn-On Energy:1.91mJ

DonghaiSemiconductor DGC40F65H7 IGBT

栅极阈值电压:3.8 ~ 5.4V	用途：传感器封装:TO247-3L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:25μA	Collector-Emitter Saturation Voltage:1.6V; 2.0V	Diode Forward Voltage:1.6V; 2.1V
Diode Peak Reverse Recovery Current:15.5A	Diode Reverse Recover Charge:0.65μC	Diode Reverse Recovery Time:80ns
Diode Thermal Resistance Junction to Case:1.03°C/W	Fall Time:58ns	Gate Charge:70nC
Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Case:0.74°C/W	Input Capacitance:2124pF
Output Capacitance:63pF	Rated Current:40A	Reverse Transfer Capacitance:14pF
Rise Time:27ns	Thermal Resistance Junction to Ambient:40°C/W	Total Switching Energy:1.44mJ
Turn-Off Delay Time:86ns	Turn-Off Energy:0.4mJ	Turn-On Delay Time:18ns
Turn-On Energy:1.04mJ

DonghaiSemiconductor DGC60F65H7 IGBT

集电极电流:60A	栅极阈值电压:4.7V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:650V	Collector-Emitter Leakage Current:25μA	Collector-Emitter Saturation Voltage:1.45V
Diode Forward Voltage:1.6V	Diode Junction to Case Thermal Resistance:0.50°C/W	Diode Peak Reverse Recovery Current:20A
Diode Reverse Recover Charge:650nC	Diode Reverse Recovery Time:59ns	Fall Time:56ns
Gate Charge:91nC	Gate-Emitter Leakage Current:±250nA	IGBT Junction to Case Thermal Resistance:0.53°C/W
Input Capacitance:3102pF	Junction to Ambient Thermal Resistance:40°C/W	Output Capacitance:152pF
Reverse Transfer Capacitance:15pF	Rise Time:53ns	Total Switching Energy:2.19mJ
Turn-Off Delay Time:130ns	Turn-Off Energy:0.99mJ	Turn-On Delay Time:41ns
Turn-On Energy:1.2mJ

DonghaiSemiconductor DGC75F65H7 IGBT

集电极电流:75A	栅极阈值电压:4.7V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:650V	Collector-Emitter Leakage Current:25μA; 2000μA	Collector-Emitter Saturation Voltage:1.45V; 1.75V
Diode Forward Voltage:1.7V; 2.1V	Diode Peak Reverse Recovery Current:25A	Diode Reverse Recover Charge:1.26μC
Diode Reverse Recovery Time:92ns	Diode Thermal Resistance Junction to Case:0.50°C/W	Fall Time:69ns; 64ns
Gate Charge:120nC	Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Case:0.43°C/W
Input Capacitance:3889pF	Output Capacitance:82pF	Reverse Transfer Capacitance:19pF
Rise Time:77ns; 79ns	Thermal Resistance Junction to Ambient:40°C/W	Total Switching Energy:3.48mJ; 4.43mJ
Turn-Off Delay Time:171ns; 190ns	Turn-Off Energy:1.0mJ; 1.2mJ	Turn-On Delay Time:21ns; 20ns
Turn-On Energy:2.48mJ; 3.23mJ

DonghaiSemiconductor DGC100F65H7 IGBT

栅极阈值电压:4.6V	用途：传感器封装:TO-247-3L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current:30μA	Collector-Emitter Saturation Voltage:1.45V	Diode Forward Voltage:1.8V
Diode Peak Reverse Recovery Current:26A	Diode Reverse Recover Charge:1.46μC	Diode Reverse Recovery Time:99ns
Diode Thermal Resistance Junction to Case:0.42°C/W	Fall Time:84ns	Gate Charge:174nC
Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Case:0.35°C/W	Input Capacitance:5686pF
Output Capacitance:118pF	Reverse Transfer Capacitance:27pF	Rise Time:21ns
Thermal Resistance Junction to Ambient:40°C/W	Total Switching Energy:5.95mJ	Turn-Off Delay Time:201ns
Turn-Off Energy:2.26mJ	Turn-On Delay Time:31ns	Turn-On Energy:3.69mJ

DonghaiSemiconductor DGCF100F65H7 IGBT

栅极阈值电压:4.6V	用途：传感器封装:TO247-4L	Collector-Emitter Breakdown Voltage:650V
Collector-Emitter Leakage Current (175℃):3000μA	Collector-Emitter Leakage Current (25℃):30μA	Collector-Emitter Saturation Voltage:1.45V
Collector-Emitter Saturation Voltage (175℃):1.75V	Collector-Emitter Saturation Voltage (Max):1.85V	Diode Forward Voltage:1.8V
Diode Forward Voltage (Max):2.2V	Diode Peak Reverse Recovery Current:29A	Diode Reverse Recover Charge:1.51μC
Diode Reverse Recovery Time:117ns	Fall Time (175℃):24ns	Fall Time (25℃):17ns
Gate Charge:174nC	Gate Threshold Voltage (Max):5.4V	Gate Threshold Voltage (Min):3.8V
Gate-Emitter Leakage Current:±250nA	Input Capacitance:5686pF	Junction-to-Ambient Thermal Resistance:40°C/W
Junction-to-Case Thermal Resistance (FRD):0.42°C/W	Junction-to-Case Thermal Resistance (IGBT):0.35°C/W	Output Capacitance:118pF
Rated Current:100A	Rated Voltage:650V	Reverse Transfer Capacitance:27pF
Rise Time (175℃):33ns	Rise Time (25℃):27ns	Total Switching Energy (175℃):4.20mJ
Total Switching Energy (25℃):2.59mJ	Turn-Off Delay Time (175℃):298ns	Turn-Off Delay Time (25℃):223ns
Turn-Off Energy (175℃):2.28mJ	Turn-Off Energy (25℃):1.27mJ	Turn-On Delay Time (175℃):31ns
Turn-On Delay Time (25℃):33ns	Turn-On Energy (175℃):1.92mJ	Turn-On Energy (25℃):1.32mJ

DonghaiSemiconductor DGC100F75H7 IGBT

集电极电流:100A	栅极阈值电压:4.6V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:750V	Collector-Emitter Leakage Current:30μA	Collector-Emitter Saturation Voltage:1.45V
Diode Forward Voltage:1.8V	Diode Peak Reverse Recovery Current:30A	Diode Reverse Recover Charge:1.5μC
Diode Reverse Recovery Time:103ns	Diode Thermal Resistance Junction to Case:0.42°C/W	Fall Time:50ns
Gate Charge:174nC	Gate-Emitter Leakage Current:±250nA	Input Capacitance:5686pF
Output Capacitance:118pF	Reverse Transfer Capacitance:27pF	Rise Time:56ns
Thermal Resistance Junction to Ambient:40°C/W	Thermal Resistance Junction to Case:0.35°C/W	Total Switching Energy:5.00mJ
Turn-Off Delay Time:199ns	Turn-Off Energy:1.71mJ	Turn-On Delay Time:29ns
Turn-On Energy:3.29mJ

DonghaiSemiconductor DGCF100F75H7 IGBT

集电极电流:100A	栅极阈值电压:4.6V	用途：传感器封装:TO-247-4L
Collector-Emitter Breakdown Voltage:750V	Collector-Emitter Leakage Current 175°C:3000μA	Collector-Emitter Leakage Current 25°C:30μA
Collector-Emitter Saturation Voltage:1.45V	Collector-Emitter Saturation Voltage 175°C:1.8V	Diode Forward Voltage:1.8V
Diode Peak Reverse Recovery Current:52A	Diode Reverse Recover Charge:1.51μC	Diode Reverse Recovery Time:63ns
Diode Thermal Resistance Junction-to-Case:0.42°C/W	Fall Time 175°C:64ns	Fall Time 25°C:22ns
Gate Charge:174nC	Gate-Emitter Leakage Current:250nA	Input Capacitance:5686pF
Junction-to-Ambient Thermal Resistance:40°C/W	Junction-to-Case Thermal Resistance:0.35°C/W	Output Capacitance:118pF
Reverse Transfer Capacitance:27pF	Rise Time 175°C:30ns	Rise Time 25°C:29ns
Total Switching Energy 175°C:4.84mJ	Total Switching Energy 25°C:3.06mJ	Turn-Off Delay Time 175°C:279ns
Turn-Off Delay Time 25°C:221ns	Turn-Off Energy 175°C:2.5mJ	Turn-Off Energy 25°C:1.25mJ
Turn-On Delay Time 175°C:32ns	Turn-On Delay Time 25°C:31ns	Turn-On Energy 175°C:2.34mJ
Turn-On Energy 25°C:1.81mJ

DonghaiSemiconductor DGC25H120F6 IGBT

集电极电流:25A	栅极阈值电压:5.5V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:1200V	Collector-Emitter Leakage Current:25μA	Collector-Emitter Saturation Voltage:2.2V
Diode Forward Voltage:2V	Diode Peak Fall Rate of Reverse Recovery Current:-22A/µs	Diode Peak Reverse Recovery Current:4.3A
Diode Reverse Recover Charge:840nC	Diode Reverse Recovery Time:369ns	Diode Thermal Resistance Junction to Case:1.47°C/W
Fall Time:41ns	Gate Charge:117nC	Gate-Emitter Leakage Current:±250nA
IGBT Thermal Resistance Junction to Case:0.57°C/W	Input Capacitance:3363pF	Output Capacitance:50pF
Reverse Transfer Capacitance:30pF	Rise Time:46ns	Thermal Resistance Junction to Ambient:40°C/W
Total Switching Energy:1.98mJ	Turn-Off Delay Time:119ns	Turn-Off Energy:0.57mJ
Turn-On Delay Time:39ns	Turn-On Energy:1.41mJ

DonghaiSemiconductor DGN25H120F6 IGBT

集电极电流:25A	栅极阈值电压:4.7 ~ 6.3V	用途：传感器封装:TO-3PN
Collector-Emitter Breakdown Voltage:1200V	Collector-Emitter Leakage Current:25μA	Collector-Emitter Leakage Current (175°C):2000μA
Collector-Emitter Saturation Voltage:2.2V; 2.6V	Diode Forward Voltage:2V	Diode Forward Voltage (175°C):1.6V
Diode Junction-to-Case Thermal Resistance:1.47°C/W	Diode Peak Fall Rate of Reverse Recovery Current:-22A/μs	Diode Peak Reverse Recovery Current:4.3A
Diode Reverse Recover Charge:840nC	Diode Reverse Recovery Time:369ns	Fall Time:41ns
Gate Charge:117nC	Gate-Emitter Leakage Current:±250nA	Input Capacitance:3363pF
Junction-to-Ambient Thermal Resistance:30.96°C/W	Junction-to-Case Thermal Resistance:0.57°C/W	Output Capacitance:50pF
Reverse Transfer Capacitance:30pF	Rise Time:46ns	Total Switching Energy:1.98mJ
Turn-Off Delay Time:119ns	Turn-Off Energy:0.57mJ	Turn-On Delay Time:39ns
Turn-On Energy:1.41mJ	Typical Collector-Emitter Saturation Voltage:2.2V

DonghaiSemiconductor DGC40H120F7 IGBT

集电极电流:40A	栅极阈值电压:4.8 ~ 6.2V	用途：传感器封装:TO247-3L
Collector-Emitter Breakdown Voltage:1200V	Collector-Emitter Leakage Current:20μA (25℃); 2000μA (175℃)	Collector-Emitter Saturation Voltage:1.85V (25℃); 2.25V (175℃)
Diode Forward Voltage:1.9V (25℃); 1.65V (175℃)	Diode Peak Reverse Recovery Current:18.3A	Diode Reverse Recover Charge:699nC
Diode Reverse Recovery Time:65ns	Diode Thermal Resistance Junction to Case:1.3℃/W	Fall Time:53ns (25℃); 62ns (150℃)
Gate Charge:233nC	Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Case:0.43℃/W
Input Capacitance:6532pF	Output Capacitance:90pF	Reverse Transfer Capacitance:28pF
Rise Time:20ns (25℃); 20ns (150℃)	Thermal Resistance Junction to Ambient:40℃/W	Total Switching Energy:2.73mJ (25℃); 4.07mJ (150℃)
Turn-Off Delay Time:271ns (25℃); 326ns (150℃)	Turn-Off Energy:0.88mJ (25℃); 1.19mJ (150℃)	Turn-On Delay Time:58ns (25℃); 53ns (150℃)
Turn-On Energy:1.85mJ (25℃); 2.88mJ (150℃)

DonghaiSemiconductor DGC40F120H7 IGBT

栅极阈值电压:5.5V	用途：传感器封装:TO247-3L	Collector-Emitter Breakdown Voltage:1200V
Collector-Emitter Leakage Current:20μA	Collector-Emitter Saturation Voltage:1.8V	Diode Forward Voltage:2.0V
Diode Junction-to-Case Thermal Resistance:0.70°C/W	Diode Peak Reverse Recovery Current:22A	Diode Reverse Recovery Charge:2243nC
Diode Reverse Recovery Time:194ns	Fall Time:65ns	Gate Charge:237nC
Gate-Emitter Leakage Current:±250nA	IGBT Junction-to-Case Thermal Resistance:0.43°C/W	Input Capacitance:6538pF
Junction-to-Ambient Thermal Resistance:40°C/W	Output Capacitance:105pF	Reverse Transfer Capacitance:28pF
Rise Time:20ns	Total Switching Energy:2.96mJ	Turn-off Delay Time:272ns
Turn-off Energy:0.90mJ	Turn-on Delay Time:57ns	Turn-on Energy:2.06mJ

DonghaiSemiconductor DGCF40F120H7 IGBT

栅极阈值电压:5.5V	用途：传感器封装:TO247-4L	Collector-Emitter Breakdown Voltage:1200V
Collector-Emitter Leakage Current:2000μA	Collector-Emitter Saturation Voltage:1.8V	Diode Forward Voltage:2.0V
Diode Peak Reverse Recovery Current:22A	Diode Reverse Recover Charge:1835nC	Diode Reverse Recovery Time:190ns
Diode Thermal Resistance Junction-to-Case:0.70°C/W	Fall Time:50ns	Gate Charge:237nC
Gate-Emitter Leakage Current:±250nA	Input Capacitance:6538pF	Junction-to-Ambient Thermal Resistance:40°C/W
Junction-to-Case Thermal Resistance:0.43°C/W	Output Capacitance:105pF	Reverse Transfer Capacitance:28pF
Rise Time:9ns	Total Switching Energy:2.15mJ	Turn-Off Delay Time:299ns
Turn-Off Energy:0.92mJ	Turn-On Delay Time:49ns	Turn-On Energy:1.23mJ

DonghaiSemiconductor DGC50F120H7 IGBT

栅极阈值电压:4.8 ~ 6.2V	用途：传感器封装:TO247-3L	Collector-Emitter Breakdown Voltage:1200V
Collector-Emitter Leakage Current:20μA; 2000μA	Collector-Emitter Saturation Voltage:1.7V; 2.1V	Diode Forward Voltage:2.2V; 2.0V
Diode Peak Reverse Recovery Current:23A	Diode Reverse Recover Charge:2640nC	Diode Reverse Recovery Time:267ns
Diode Thermal Resistance Junction to Case:0.67°C/W	Fall Time:52ns; 80ns	Gate Charge:275nC
Gate-Emitter Leakage Current:±250nA	IGBT Thermal Resistance Junction to Case:0.34°C/W	Input Capacitance:7325pF
Output Capacitance:121pF	Rated Current:50A	Rated Voltage:1200V
Reverse Transfer Capacitance:35pF	Rise Time:48ns; 53ns	Thermal Resistance Junction to Ambient:40°C/W
Total Switching Energy:3.88mJ; 5.94mJ	Turn-Off Delay Time:339ns; 390ns	Turn-Off Energy:1.30mJ; 1.81mJ
Turn-On Delay Time:52ns; 48ns	Turn-On Energy:2.58mJ; 4.13mJ

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