DonghaiSemiconductor DGF15F65T7 IGBT-传感器专家网

产品概述

DGF15F65T7 是一款 650V、13A IGBT，采用 TO-220F 封装，典型集电极-发射极饱和压降 1.5V，专为高效、高可靠性功率变换系统设计，适用于变频器、伺服驱动、电机驱动等应用。

建议结合母线电压、开关频率及散热条件进行选型；采购前请核对最新规格书参数；系统设计中请配置过压、过流及防静电保护措施。

DGF15F65T7 IGBT选型参数

规格项	参数值	勾选搜索替代
电气
集电极电流	13 A
物理
用途：传感器封装	TO-220F
更多规格
Collector-Emitter Breakdown Voltage	650 V
Collector-Emitter Leakage Current 175°C	2000 μA
Collector-Emitter Leakage Current 25°C	25 μA
Collector-Emitter Saturation Voltage	1.5 V
Collector-Emitter Saturation Voltage 175°C	1.8 V
Diode Forward Voltage 175°C	1.2 V
Diode Forward Voltage 25°C	1.4 ~ 1.7 V
Diode Peak Reverse Recovery Current	16.5 A
Diode Reverse Recover Charge	0.75 μC
Diode Reverse Recovery Time	108 ns
Diode Thermal Resistance Junction to Case	5.4 °C/W
Fall Time 150°C	129 ns
Fall Time 25°C	75 ns
Gate Charge	65 nC
栅极阈值电压	4.0 ~ 5.6 V
Gate-Emitter Leakage Current	250 nA
Input Capacitance	767 pF
Output Capacitance	26 pF
Reverse Transfer Capacitance	12 pF
Rise Time 150°C	11 ns
Rise Time 25°C	9 ns
Thermal Resistance Junction to Ambient	65 °C/W
Thermal Resistance Junction to Case	3.0 °C/W
Total Switching Energy 150°C	1.06 mJ
Total Switching Energy 25°C	0.60 mJ
Total Switching Loss	0.60 mJ
Turn-Off Delay Time 150°C	82 ns
Turn-Off Delay Time 25°C	77 ns
Turn-Off Energy 150°C	0.29 mJ
Turn-Off Energy 25°C	0.19 mJ
Turn-On Delay Time 150°C	9 ns
Turn-On Delay Time 25°C	10 ns
Turn-On Energy 150°C	0.77 mJ
Turn-On Energy 25°C	0.41 mJ