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    • DONGHAI 东海半导体 DGC75F65M IGBT

      集电极电流:75A
      栅极阈值电压:4.5 ~ 7V
      用途：传感器封装:TO-247-3L
      Collector-Emitter Breakdown Voltage:650V
      Collector-Emitter Leakage Current:25μA; 2000μA
      Collector-Emitter Saturation Voltage:1.7 ~ 2.2V
      Diode Forward Voltage:1.7 ~ 2.2V; 1.3V
      Diode Junction-to-Case Thermal Resistance:0.58°C/W
      Diode Peak Reverse Recovery Current:2.2A
      Diode Reverse Recovery Charge:126nC
      Diode Reverse Recovery Time:105ns
      Fall Time:95ns; 147ns
      Gate Charge:187nC
      Gate-to-Emitter Leakage Current:±250nA
      Input Capacitance:5474pF
      Junction-to-Ambient Thermal Resistance:40°C/W
      Junction-to-Case Thermal Resistance:0.4°C/W
      Output Capacitance:243pF
      Reverse Transfer Capacitance:35pF
      Rise Time:125ns; 119ns
      Total Switching Energy:4.56mJ; 5.02mJ
      Turn-off Delay Time:143ns; 169ns
      Turn-off Energy:1.91mJ; 2.33mJ
      Turn-on Delay Time:41ns; 37ns
      Turn-on Energy:2.65mJ; 2.69mJ

  • MSTK 苏州迈思泰克 总共1条产品数据 点击查看 >

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