DonghaiSemiconductor DGCF100F65H7 IGBT-传感器专家网

产品概述

DGCF100F65H7 是一款 650V、100A IGBT，采用 TO247-4L 封装，典型集电极-发射极饱和压降 1.45V，适用于光伏、储能、充电桩等高效功率变换系统。

建议结合母线电压、开关频率及散热条件选型；采购前请核对最新规格书参数，并配置过压、过流及防静电保护。

DGCF100F65H7 IGBT选型参数

规格项	参数值	勾选搜索替代
电气
栅极阈值电压	4.6V
物理
用途：传感器封装	TO247-4L
更多规格
Collector-Emitter Breakdown Voltage	650V
Collector-Emitter Leakage Current (175℃)	3000μA
Collector-Emitter Leakage Current (25℃)	30μA
Collector-Emitter Saturation Voltage	1.45V
Collector-Emitter Saturation Voltage (175℃)	1.75V
Collector-Emitter Saturation Voltage (Max)	1.85V
Diode Forward Voltage	1.8V
Diode Forward Voltage (Max)	2.2V
Diode Peak Reverse Recovery Current	29A
Diode Reverse Recover Charge	1.51μC
Diode Reverse Recovery Time	117ns
Fall Time (175℃)	24ns
Fall Time (25℃)	17ns
Gate Charge	174nC
Gate Threshold Voltage (Max)	5.4V
Gate Threshold Voltage (Min)	3.8V
Gate-Emitter Leakage Current	±250nA
Input Capacitance	5686pF
Junction-to-Ambient Thermal Resistance	40°C/W
Junction-to-Case Thermal Resistance (FRD)	0.42°C/W
Junction-to-Case Thermal Resistance (IGBT)	0.35°C/W
Output Capacitance	118pF
Rated Current	100A
Rated Voltage	650V
Reverse Transfer Capacitance	27pF
Rise Time (175℃)	33ns
Rise Time (25℃)	27ns
Total Switching Energy (175℃)	4.20mJ
Total Switching Energy (25℃)	2.59mJ
Turn-Off Delay Time (175℃)	298ns
Turn-Off Delay Time (25℃)	223ns
Turn-Off Energy (175℃)	2.28mJ
Turn-Off Energy (25℃)	1.27mJ
Turn-On Delay Time (175℃)	31ns
Turn-On Delay Time (25℃)	33ns
Turn-On Energy (175℃)	1.92mJ
Turn-On Energy (25℃)	1.32mJ