DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商,专注于先进功率器件的研发设计、封装制造和应用研究,为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年,总部位于无锡;公司致力于为客户提供高品质、高性价比功率器件产品,产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景:卓越功率器件产品和方案提供商。企业价值观:效率、创新、可靠、团队协同。企业使命:为美好生活,为绿色能源,贡献东海的力量。发展历程2004-2010年  公司成立,封装产线完成,为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH,入选国家高新技术企业,通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司,Trench MOS研发成功并量产,汽车电子IATF16949体系认证。2020-2022年  引入战略投资者,股改完成,FS-IGBT/SJ MOS量产,批量推出车规级产品。2023-2025年  新研发大楼启用;IGBT模块规模出货,自有制造能力建设提升,IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
  • DonghaiSemiconductor DGC75F120H7 IGBT

    栅极阈值电压:4.7 ~ 6.3V
    用途:传感器封装:TO-247-3L
    Collector-Emitter Breakdown Voltage:1200V
    Collector-Emitter Leakage Current:25μA; 2000μA
    Collector-Emitter Saturation Voltage:1.7V; 2.1V
    Diode Forward Voltage:2.5V; 2.1V
    Diode Peak Fall Rate of Reverse Recovery Current:-160A/μs
    Diode Peak Reverse Recovery Current:22A
    Diode Reverse Recover Charge:2.1uC
    Diode Reverse Recovery Energy:0.9mJ
    Diode Reverse Recovery Time:169ns
    Diode Thermal Resistance Junction to Case:0.49°C/W
    Fall Time:32ns; 97ns
    Gate Charge:417nC
    Gate-Emitter Leakage Current:±250nA
    IGBT Thermal Resistance Junction to Case:0.28°C/W
    Input Capacitance:10821pF
    Output Capacitance:122pF
    Reverse Transfer Capacitance:54pF
    Rise Time:32ns; 28ns
    Thermal Resistance Junction to Ambient:40°C/W
    Total Switching Energy:5.99mJ; 9.40mJ
    Turn-Off Delay Time:383ns; 437ns
    Turn-Off Energy:1.69mJ; 3.55mJ
    Turn-On Delay Time:69ns; 65ns
    Turn-On Energy:4.30mJ; 5.97mJ
  • DonghaiSemiconductor DGCF75F120H7 IGBT

    栅极阈值电压:4.7 ~ 6.3V
    用途:传感器封装:TO-247-4L
    Collector-Emitter Breakdown Voltage:1200V
    Collector-Emitter Leakage Current:25μA; 2000μA
    Collector-Emitter Saturation Voltage:1.7V; 2.1V
    Diode Forward Voltage:2.5V; 2.1V
    Diode Peak Reverse Recovery Current:30A
    Diode Reverse Recover Charge:1.55μC
    Diode Reverse Recovery Time:96ns
    Fall Time:53ns; 69ns
    Gate Charge:413nC
    Gate-Emitter Leakage Current:±250nA
    Input Capacitance:10882pF
    Output Capacitance:197pF
    Rated Collector Current:75A
    Reverse Transfer Capacitance:55pF
    Rise Time:20ns; 22ns
    Thermal Resistance Junction to Ambient:40°C/W
    Thermal Resistance Junction to Case:0.28°C/W; 0.49°C/W
    Total Switching Energy:4.28mJ; 6.86mJ
    Turn-Off Delay Time:271ns; 470ns
    Turn-Off Energy:1.56mJ; 2.19mJ
    Turn-On Delay Time:58ns; 59ns
    Turn-On Energy:2.72mJ; 4.67mJ
  • DonghaiSemiconductor DGCP140F120H7 IGBT

    栅极阈值电压:5.3V
    用途:传感器封装:TO247P-3L
    Collector-Emitter Breakdown Voltage:1200V
    Collector-Emitter Leakage Current:40μA
    Collector-Emitter Saturation Voltage:1.65V
    Diode Forward Voltage:1.9V
    Diode Peak Reverse Recovery Current:47A
    Diode Reverse Recover Charge:4906nC
    Diode Reverse Recovery Time:190ns
    Diode Thermal Resistance Junction to Case:0.21°C/W
    Fall Time:12ns
    Gate Charge:957nC
    Gate-Emitter Leakage Current:±250nA
    IGBT Thermal Resistance Junction to Case:0.12°C/W
    Input Capacitance:24643pF
    Output Capacitance:415pF
    Rated Current:140A
    Rated Voltage:1200V
    Reverse Transfer Capacitance:122pF
    Rise Time:112ns
    Thermal Resistance Junction to Ambient:40°C/W
    Total Switching Energy:13.53mJ
    Turn-Off Delay Time:825ns
    Turn-Off Energy:2.87mJ
    Turn-On Delay Time:147ns
    Turn-On Energy:10.66mJ
  • DonghaiSemiconductor DGCQ140F120H7 IGBT

    集电极电流:140A
    栅极阈值电压:5.3V
    用途:传感器封装:TO247P-4L
    Collector-Emitter Breakdown Voltage:1200V
    Collector-Emitter Leakage Current:40μA
    Collector-Emitter Saturation Voltage:1.65V
    Diode Forward Voltage:1.9V
    Diode Junction-to-Case Thermal Resistance:0.21°C/W
    Diode Peak Reverse Recovery Current:47A
    Diode Reverse Recover Charge:3575nC
    Diode Reverse Recovery Time:174ns
    Fall Time:4ns
    Gate Charge:957nC
    Gate-Emitter Leakage Current:±250nA
    Input Capacitance:24643pF
    Junction-to-Ambient Thermal Resistance:40°C/W
    Junction-to-Case Thermal Resistance:0.12°C/W
    Output Capacitance:415pF
    Reverse Transfer Capacitance:122pF
    Rise Time:44ns
    Total Switching Energy:8.52mJ
    Turn-Off Delay Time:860ns
    Turn-Off Energy:2.24mJ
    Turn-On Delay Time:139ns
    Turn-On Energy:6.28mJ
  • DonghaiSemiconductor DGCQ140F120S7 IGBT

    集电极电流:140A
    栅极阈值电压:4.6 ~ 6.0V
    用途:传感器封装:TO247P-4L
    Collector-Emitter Breakdown Voltage:1200V
    Collector-Emitter Leakage Current:40μA
    Collector-Emitter Saturation Voltage:1.35V
    Diode Forward Voltage:1.9V
    Diode Junction-to-Case Thermal Resistance:0.21°C/W
    Diode Peak Reverse Recovery Current:47A
    Diode Reverse Recover Charge:3575nC
    Diode Reverse Recovery Time:174ns
    Fall Time:21ns
    Gate Charge:957nC
    Gate-Emitter Leakage Current:±250nA
    IGBT Junction-to-Case Thermal Resistance:0.12°C/W
    Input Capacitance:24643pF
    Junction-to-Ambient Thermal Resistance:40°C/W
    Output Capacitance:415pF
    Rise Time:33ns
    Total Switching Energy:9.41mJ
    Turn-Off Delay Time:914ns
    Turn-Off Energy:5.01mJ
    Turn-On Delay Time:128ns
    Turn-On Energy:4.40mJ
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