栅极阈值电压:4.7 ~ 6.3V |
用途:传感器封装:TO-247-3L |
Collector-Emitter Breakdown Voltage:1200V |
Collector-Emitter Leakage Current:25μA; 2000μA |
Collector-Emitter Saturation Voltage:1.7V; 2.1V |
Diode Forward Voltage:2.5V; 2.1V |
Diode Peak Fall Rate of Reverse Recovery Current:-160A/μs |
Diode Peak Reverse Recovery Current:22A |
Diode Reverse Recover Charge:2.1uC |
Diode Reverse Recovery Energy:0.9mJ |
Diode Reverse Recovery Time:169ns |
Diode Thermal Resistance Junction to Case:0.49°C/W |
Fall Time:32ns; 97ns |
Gate Charge:417nC |
Gate-Emitter Leakage Current:±250nA |
IGBT Thermal Resistance Junction to Case:0.28°C/W |
Input Capacitance:10821pF |
Output Capacitance:122pF |
Reverse Transfer Capacitance:54pF |
Rise Time:32ns; 28ns |
Thermal Resistance Junction to Ambient:40°C/W |
Total Switching Energy:5.99mJ; 9.40mJ |
Turn-Off Delay Time:383ns; 437ns |
Turn-Off Energy:1.69mJ; 3.55mJ |
Turn-On Delay Time:69ns; 65ns |
Turn-On Energy:4.30mJ; 5.97mJ |
栅极阈值电压:4.7 ~ 6.3V |
用途:传感器封装:TO-247-4L |
Collector-Emitter Breakdown Voltage:1200V |
Collector-Emitter Leakage Current:25μA; 2000μA |
Collector-Emitter Saturation Voltage:1.7V; 2.1V |
Diode Forward Voltage:2.5V; 2.1V |
Diode Peak Reverse Recovery Current:30A |
Diode Reverse Recover Charge:1.55μC |
Diode Reverse Recovery Time:96ns |
Fall Time:53ns; 69ns |
Gate Charge:413nC |
Gate-Emitter Leakage Current:±250nA |
Input Capacitance:10882pF |
Output Capacitance:197pF |
Rated Collector Current:75A |
Reverse Transfer Capacitance:55pF |
Rise Time:20ns; 22ns |
Thermal Resistance Junction to Ambient:40°C/W |
Thermal Resistance Junction to Case:0.28°C/W; 0.49°C/W |
Total Switching Energy:4.28mJ; 6.86mJ |
Turn-Off Delay Time:271ns; 470ns |
Turn-Off Energy:1.56mJ; 2.19mJ |
Turn-On Delay Time:58ns; 59ns |
Turn-On Energy:2.72mJ; 4.67mJ |
栅极阈值电压:5.3V |
用途:传感器封装:TO247P-3L |
Collector-Emitter Breakdown Voltage:1200V |
Collector-Emitter Leakage Current:40μA |
Collector-Emitter Saturation Voltage:1.65V |
Diode Forward Voltage:1.9V |
Diode Peak Reverse Recovery Current:47A |
Diode Reverse Recover Charge:4906nC |
Diode Reverse Recovery Time:190ns |
Diode Thermal Resistance Junction to Case:0.21°C/W |
Fall Time:12ns |
Gate Charge:957nC |
Gate-Emitter Leakage Current:±250nA |
IGBT Thermal Resistance Junction to Case:0.12°C/W |
Input Capacitance:24643pF |
Output Capacitance:415pF |
Rated Current:140A |
Rated Voltage:1200V |
Reverse Transfer Capacitance:122pF |
Rise Time:112ns |
Thermal Resistance Junction to Ambient:40°C/W |
Total Switching Energy:13.53mJ |
Turn-Off Delay Time:825ns |
Turn-Off Energy:2.87mJ |
Turn-On Delay Time:147ns |
Turn-On Energy:10.66mJ |
集电极电流:140A |
栅极阈值电压:5.3V |
用途:传感器封装:TO247P-4L |
Collector-Emitter Breakdown Voltage:1200V |
Collector-Emitter Leakage Current:40μA |
Collector-Emitter Saturation Voltage:1.65V |
Diode Forward Voltage:1.9V |
Diode Junction-to-Case Thermal Resistance:0.21°C/W |
Diode Peak Reverse Recovery Current:47A |
Diode Reverse Recover Charge:3575nC |
Diode Reverse Recovery Time:174ns |
Fall Time:4ns |
Gate Charge:957nC |
Gate-Emitter Leakage Current:±250nA |
Input Capacitance:24643pF |
Junction-to-Ambient Thermal Resistance:40°C/W |
Junction-to-Case Thermal Resistance:0.12°C/W |
Output Capacitance:415pF |
Reverse Transfer Capacitance:122pF |
Rise Time:44ns |
Total Switching Energy:8.52mJ |
Turn-Off Delay Time:860ns |
Turn-Off Energy:2.24mJ |
Turn-On Delay Time:139ns |
Turn-On Energy:6.28mJ |
集电极电流:140A |
栅极阈值电压:4.6 ~ 6.0V |
用途:传感器封装:TO247P-4L |
Collector-Emitter Breakdown Voltage:1200V |
Collector-Emitter Leakage Current:40μA |
Collector-Emitter Saturation Voltage:1.35V |
Diode Forward Voltage:1.9V |
Diode Junction-to-Case Thermal Resistance:0.21°C/W |
Diode Peak Reverse Recovery Current:47A |
Diode Reverse Recover Charge:3575nC |
Diode Reverse Recovery Time:174ns |
Fall Time:21ns |
Gate Charge:957nC |
Gate-Emitter Leakage Current:±250nA |
IGBT Junction-to-Case Thermal Resistance:0.12°C/W |
Input Capacitance:24643pF |
Junction-to-Ambient Thermal Resistance:40°C/W |
Output Capacitance:415pF |
Rise Time:33ns |
Total Switching Energy:9.41mJ |
Turn-Off Delay Time:914ns |
Turn-Off Energy:5.01mJ |
Turn-On Delay Time:128ns |
Turn-On Energy:4.40mJ |
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