DONGHAI 东海半导体SiC MOSFET-型号-图片-传感器专家网

DONGHAI 东海半导体

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DonghaiSemiconductor DCC040M65G3 SiC MOSFET

Continuous Drain Current:60A	Diode Forward Voltage:3.9V	Diode Max Current:51A
Diode Reverse Recovery Charge:99nC	Diode Reverse Recovery Time:14ns	Drain-Source On-State Resistance:52mΩ
Drain-Source Voltage:650V	Fall Time:5ns	Gate Threshold Voltage:2.0V ~ 4.0V
Gate Total Charge:39nC	Gate-Drain Charge:13nC	Gate-Source Charge:14nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10V ~ +23V	Input Capacitance:1301pF
Internal Gate Resistance:2Ω	Operating Junction Temperature:-55℃ ~ 175℃	Output Capacitance:107pF
Package:TO-247-3	Peak Reverse Recovery Current:5A	Power Dissipation:227W
Pulsed Drain Current:176A	Reverse Transfer Capacitance:5pF	Rise Time:9ns
Storage Temperature:-55℃ ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.66℃/W
Turn-Off Delay Time:16ns	Turn-Off Switching Energy:40μJ	Turn-On Delay Time:7ns
Turn-On Switching Energy:128μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCC023M65G3 SiC MOSFET

Body Diode Forward Voltage:3.9V	Body Diode Reverse Recovery Charge:170nC	Body Diode Reverse Recovery Time:23ns
Continuous Drain Current:105A	Drain-Source On-State Resistance:33mΩ	Drain-Source Voltage:650V
Fall Time:7ns	Gate Threshold Voltage:2 ~ 4V	Gate Total Charge:70nC
Gate-Drain Charge:20nC	Gate-Source Charge:24nC	Gate-Source Leakage Current:250nA
Gate-Source Voltage:-10 ~ 23V	Input Capacitance:2175pF	Internal Gate Resistance:2.3Ω
Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:169pF	Package:TO-247-3
Peak Reverse Recovery Current:9A	Power Dissipation:348W	Pulsed Drain Current:262A
Reverse Transfer Capacitance:10.9pF	Rise Time:18ns	Storage Temperature:-55 ~ 175℃
Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.43℃/W	Turn-Off Delay Time:21ns
Turn-Off Switching Energy:32μJ	Turn-On Delay Time:7ns	Turn-On Switching Energy:118μJ
Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCC015M65G3 SiC MOSFET

Body Diode Forward Voltage:3.9V	Body Diode Reverse Recovery Time:43ns	Continuous Drain Current:140A
Drain-Source On-State Resistance:21mΩ	Drain-Source Voltage:650V	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:117nC	Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ +23V
Input Capacitance:3654pF	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:278pF
Package:TO-247-3	Power Dissipation:429W	Pulsed Drain Current:350A
Reverse Transfer Capacitance:14pF	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:0.35℃/W	Turn-Off Switching Energy:407μJ	Turn-On Switching Energy:309μJ
Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCEV040M75G3 SiC MOSFET

Body Diode Forward Voltage:3.9V	Body Diode Reverse Recovery Charge:97nC	Body Diode Reverse Recovery Time:13ns
Continuous Drain Current:60A	Drain-Source On-State Resistance:52mΩ	Drain-Source Voltage:750V
Gate Threshold Voltage:2.0 ~ 4.0V	Gate Total Charge:39nC	Gate-Source Leakage Current:250nA
Gate-Source Voltage:-10 ~ 23V	Input Capacitance:1301pF	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:107pF	Package:TO-263-7	Power Dissipation:214W
Pulsed Drain Current:176A	Reverse Transfer Capacitance:5pF	Storage Temperature:-55 ~ 175℃
Thermal Resistance Junction-to-Ambient:40℃/W	Thermal Resistance Junction-to-Case:0.66℃/W	Turn-Off Switching Energy:45μJ
Turn-On Switching Energy:128μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCEV023M75G3 SiC MOSFET

Body Diode Forward Voltage:3.9V	Body Diode Reverse Recovery Charge:170nC	Body Diode Reverse Recovery Time:23ns
Continuous Drain Current:105A	Drain-Source Breakdown Voltage:750V	Drain-Source On-State Resistance:33mΩ
Fall Time:7ns	Gate Threshold Voltage:2.0 ~ 4.0V	Gate-Drain Charge:20nC
Gate-Source Charge:24nC	Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ +23V
Input Capacitance:2175pF	Internal Gate Resistance:2.3Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:169pF	Package:TO-263-7	Peak Reverse Recovery Current:9A
Power Dissipation:348W	Pulsed Drain Current:262A	Reverse Transfer Capacitance:10.9pF
Rise Time:18ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:0.43℃/W	Total Gate Charge:70nC	Turn-Off Delay Time:21ns
Turn-Off Switching Energy:32μJ	Turn-On Delay Time:7ns	Turn-On Switching Energy:118μJ
Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF040M75G3 SiC MOSFET

Body Diode Forward Voltage:3.9 V	Body Diode Max Current:51 A	Body Diode Reverse Recovery Charge:97 nC
Continuous Drain Current:60 A	Drain-Source Breakdown Voltage:750 V	Drain-Source On-State Resistance:52 mΩ
Fall Time:6 ns	Gate Threshold Voltage:2.0 ~ 4.0 V	Gate Total Charge:39 nC
Gate-Drain Charge:13 nC	Gate-Source Charge:14 nC	Gate-Source Leakage Current:250 nA
Gate-Source Voltage:-10 ~ 23 V	Input Capacitance:1301 pF	Internal Gate Resistance:2 Ω
Junction-Ambient Thermal Resistance:40 ℃/W	Junction-Case Thermal Resistance:0.66 ℃/W	Operating Junction Temperature:-55 ~ 175 ℃
Output Capacitance:107 pF	Package:TO-247-4	Peak Reverse Recovery Current:5 A
Power Dissipation:227 W	Pulsed Drain Current:176 A	Recommended Gate-Source Voltage:-5 ~ 18 V
Reverse Recovery Time:13 ns	Reverse Transfer Capacitance:5 pF	Rise Time:9 ns
Storage Temperature:-55 ~ 175 ℃	Turn-Off Delay Time:18 ns	Turn-Off Switching Energy:45 μJ
Turn-On Delay Time:7 ns	Turn-On Switching Energy:128 μJ	Zero Gate Voltage Drain Current:100 μA

DonghaiSemiconductor DCCF023M75G3 SiC MOSFET

Continuous Drain Current:105A	Drain-Source Breakdown Voltage:750V	Drain-Source On-State Resistance:33mΩ
Fall Time:10ns	Gate Threshold Voltage:2.0 ~ 4.0V	Gate Total Charge:70nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ +23V	Input Capacitance:2434pF
Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:159pF	Package:TO-247-4
Power Dissipation:348W	Pulsed Drain Current:262A	Reverse Transfer Capacitance:10.7pF
Rise Time:16ns	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.43℃/W
Turn-Off Delay Time:29ns	Turn-Off Switching Energy:94μJ	Turn-On Delay Time:12ns
Turn-On Switching Energy:138μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF040M120G3 SiC MOSFET

Continuous Drain Current:68A	Diode Forward Voltage:3.6 ~ 3.9V	Diode Max Current:63A
Diode Reverse Recovery Charge:95nC	Diode Reverse Recovery Time:10ns	Drain-Source Breakdown Voltage:1200V
Drain-Source On-State Resistance:40 ~ 52mΩ	Fall Time:6.4ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:74nC	Gate-Drain Charge:13nC	Gate-Source Charge:18nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:1767pF
Internal Gate Resistance:2.2Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:70pF
Package:TO-247-4	Peak Reverse Recovery Current:6A	Power Dissipation:357W
Pulsed Drain Current:200A	Reverse Transfer Capacitance:5.6pF	Rise Time:11.5ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.42℃/W
Transconductance:23 ~ 24S	Turn-Off Delay Time:19.5ns	Turn-Off Switching Energy:195μJ
Turn-On Delay Time:6.7ns	Turn-On Switching Energy:272μJ	Zero Gate Voltage Drain Current:50μA

DonghaiSemiconductor DCCF140M120G2 SiC MOSFET

Continuous Drain Current:19A	Diode Forward Voltage:4.2V	Diode Max Current:19A
Diode Reverse Recovery Charge:29nC	Diode Reverse Recovery Time:20ns	Drain-Source On-State Resistance:185mΩ
Drain-Source Voltage:1200V	Fall Time:5.7ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:25nC	Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ 23V
Input Capacitance:600pF	Internal Gate Resistance:3.9Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:32pF	Package:TO-247-4	Peak Reverse Recovery Current:2.5A
Power Dissipation:105W	Pulsed Drain Current:39A	Reverse Transfer Capacitance:2.8pF
Rise Time:20ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:1.40℃/W	Transconductance:4.7S	Turn-Off Delay Time:12ns
Turn-Off Switching Energy:17μJ	Turn-On Delay Time:7ns	Turn-On Switching Energy:156μJ
Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF080M120G3 SiC MOSFET

Continuous Drain Current:32A	Diode Forward Voltage:3.5V	Diode Max Current:32A
Diode Reverse Recovery Charge:214nC	Diode Reverse Recovery Time:20.8ns	Drain-Source Breakdown Voltage:1200V
Drain-Source On-State Resistance:80mΩ	Fall Time:5.8ns	Gate Threshold Voltage:2.7 ~ 3.7V
Gate Total Charge:48nC	Gate-Drain Charge:8nC	Gate-Source Charge:23nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-8 ~ 22V	Input Capacitance:918pF
Internal Gate Resistance:2.4Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:43pF
Package:TO-247-4L	Peak Reverse Recovery Current:17A	Power Dissipation:188W
Pulsed Drain Current:74A	Reverse Transfer Capacitance:3.1pF	Rise Time:11.2ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:30℃/W	Thermal Resistance Junction-Case:0.80℃/W
Transconductance:12.9S	Turn-Off Delay Time:14.4ns	Turn-Off Switching Energy:23.5μJ
Turn-On Delay Time:6.7ns	Turn-On Switching Energy:490μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF015M75G3 SiC MOSFET

Continuous Drain Current:140A	Diode Forward Voltage:3.9V	Diode Max Current:175A
Diode Reverse Recovery Charge:149nC	Diode Reverse Recovery Time:43ns	Drain-Source Breakdown Voltage:750V
Drain-Source On-State Resistance:21mΩ	Fall Time:6ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:117nC	Gate-Drain Charge:44nC	Gate-Source Charge:37nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:3654pF
Internal Gate Resistance:2Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:278pF
Package:TO-247-4	Peak Reverse Recovery Current:28A	Power Dissipation:429W
Pulsed Drain Current:350A	Reverse Transfer Capacitance:14pF	Rise Time:16.6ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.35℃/W
Turn-Off Delay Time:35.6ns	Turn-Off Switching Energy:407μJ	Turn-On Delay Time:14.9ns
Turn-On Switching Energy:309μJ	Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCCF030M120G3 SiC MOSFET

Continuous Drain Current:77A	Diode Forward Voltage:3.9V	Diode Max Current:77A
Diode Reverse Recovery Charge:129nC	Diode Reverse Recovery Time:13ns	Drain-Source Breakdown Voltage:1200V
Drain-Source On-State Resistance:40mΩ	Drain-Source Voltage:1200V	Fall Time:8ns
Gate Threshold Voltage:2.0 ~ 4.0V	Gate Total Charge:100nC	Gate-Drain Charge:18nC
Gate-Source Charge:23nC	Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V
Input Capacitance:2400pF	Internal Gate Resistance:2.8Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:92pF	Package:TO-247-4	Peak Reverse Recovery Current:7.4A
Power Dissipation:375W	Pulsed Drain Current:231A	Reverse Transfer Capacitance:9pF
Rise Time:19ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:0.40℃/W	Transconductance:29S	Turn-Off Delay Time:28ns
Turn-Off Switching Energy:156μJ	Turn-On Delay Time:14ns	Turn-On Switching Energy:380μJ
Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCC900M170G2 SiC MOSFET

Continuous Drain Current:6A	Diode Forward Voltage:4V	Diode Max Current:6A
Diode Reverse Recovery Charge:23nC	Diode Reverse Recovery Time:21ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:1150mΩ	Fall Time:10ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:6nC	Gate-Drain Charge:1nC	Gate-Source Charge:2nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ +23V	Input Capacitance:127pF
Internal Gate Resistance:10Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:5.1pF
Package:TO-247-3	Peak Reverse Recovery Current:2A	Power Dissipation:55W
Pulsed Drain Current:15A	Reverse Transfer Capacitance:0.4pF	Rise Time:13ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:2.70℃/W
Transconductance:0.9S	Turn-Off Delay Time:11ns	Turn-Off Switching Energy:19μJ
Turn-On Delay Time:5ns	Turn-On Switching Energy:53μJ	Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCEV900M170G2 SiC MOSFET

Continuous Drain Current:6A	Diode Forward Voltage:4V	Diode Max Current:3.4A
Diode Reverse Recovery Charge:23nC	Diode Reverse Recovery Time:21ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:1150mΩ	Fall Time:10ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:6nC	Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V
Input Capacitance:127pF	Internal Gate Resistance:10Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:5.1pF	Package:TO-263-7	Peak Reverse Recovery Current:2A
Power Dissipation:83W	Pulsed Drain Current:15A	Recommended Gate-Source Voltage:0 ~ 15V
Reverse Transfer Capacitance:0.4pF	Rise Time:13ns	Storage Temperature:-55 ~ 175℃
Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:1.81℃/W	Transconductance:0.9S
Turn-Off Delay Time:11ns	Turn-Off Switching Energy:19μJ	Turn-On Delay Time:5ns
Turn-On Switching Energy:53μJ	Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCCF023M150G3 SiC MOSFET

Continuous Drain Current:95A	Diode Forward Voltage:3.9V	Diode Max Current:92A
Diode Reverse Recovery Charge:180nC	Diode Reverse Recovery Time:17ns	Drain-Source Breakdown Voltage:1500V
Drain-Source On-State Resistance:30mΩ	Fall Time:7ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:150nC	Gate-Drain Charge:25nC	Gate-Source Charge:34nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:3340pF
Internal Gate Resistance:1.9Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:96pF
Package:TO-247-4	Peak Reverse Recovery Current:9A	Power Dissipation:469W
Pulsed Drain Current:285A	Reverse Transfer Capacitance:9.5pF	Rise Time:16ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Case:0.32℃/W	Transconductance:28S
Turn-Off Delay Time:33ns	Turn-Off Switching Energy:251μJ	Turn-On Delay Time:22ns
Turn-On Switching Energy:680μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF020M120G3 SiC MOSFET

Continuous Drain Current:109A	Diode Forward Voltage:3.9V	Diode Max Current:105A
Diode Reverse Recovery Charge:193nC	Diode Reverse Recovery Time:19ns	Drain-Source Breakdown Voltage:1200V
Drain-Source On-State Resistance:26mΩ	Fall Time:8ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:150nC	Gate-Drain Charge:27nC	Gate-Source Charge:35nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ +23V	Input Capacitance:3450pF
Internal Gate Resistance:1.9Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:114pF
Package:TO-247-4L	Peak Reverse Recovery Current:10.5A	Power Dissipation:469W
Pulsed Drain Current:327A	Reverse Transfer Capacitance:11pF	Rise Time:19ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.32℃/W
Transconductance:29S	Turn-Off Delay Time:43ns	Turn-Off Switching Energy:312μJ
Turn-On Delay Time:24ns	Turn-On Switching Energy:760μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF013M120G3 SiC MOSFET

Continuous Drain Current:158A	Diode Forward Voltage:3.9V	Diode Max Current:142A
Diode Reverse Recovery Charge:260nC	Diode Reverse Recovery Time:21ns	Drain-Source Breakdown Voltage:1200V
Drain-Source On-State Resistance:18mΩ	Fall Time:19ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:230nC	Gate-Drain Charge:42nC	Gate-Source Charge:55nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:5507pF
Internal Gate Resistance:1.9Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:195pF
Package:TO-247-4L	Peak Reverse Recovery Current:22A	Power Dissipation:652W
Pulsed Drain Current:394A	Recommended Gate-Source Voltage:-5 ~ 18V	Reverse Transfer Capacitance:11pF
Rise Time:41ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:0.23℃/W	Transconductance:60S	Turn-Off Delay Time:70ns
Turn-Off Switching Energy:760μJ	Turn-On Delay Time:16ns	Turn-On Switching Energy:1164μJ
Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCC450M170G2 SiC MOSFET

Body Diode Forward Voltage (Tj=175℃):3.4V	Body Diode Forward Voltage (Tj=25℃):4V	Body Diode Max Current:37A
Body Diode Reverse Recovery Charge:50nC	Body Diode Reverse Recovery Time:21ns	Continuous Drain Current (TC=100℃):7A
Continuous Drain Current (TC=25℃):10A	Drain-Source Breakdown Voltage:1700V	Drain-Source On-State Resistance (VGS=15V, Tj=175℃):≤900mΩ
Drain-Source On-State Resistance (VGS=15V, Tj=25℃):≤600mΩ	Drain-Source On-State Resistance (VGS=18V, Tj=175℃):≤690mΩ	Drain-Source On-State Resistance (VGS=18V, Tj=25℃):≤510mΩ
Drain-Source Voltage:1700V	Fall Time:10ns	Gate Threshold Voltage (Tj=175℃):2.2V
Gate Threshold Voltage (Tj=25℃):2.0 ~ 4.0V	Gate Total Charge:15nC	Gate-Drain Charge:3nC
Gate-Source Charge:5nC	Gate-Source Leakage Current (VGS=-10V):≤100nA	Gate-Source Leakage Current (VGS=23V):≤100nA
Gate-Source Voltage:-10 ~ 23V	Gate-Source Voltage (Recommended):0 ~ 15V	Input Capacitance:260pF
Internal Gate Resistance:12Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:11pF
Package:TO-247-3	Peak Reverse Recovery Current:5A	Power Dissipation:115W
Pulsed Drain Current:22A	Reverse Transfer Capacitance:1pF	Rise Time:13ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:1.30℃/W
Transconductance (Tj=175℃):1.9S	Transconductance (Tj=25℃):1.8S	Turn-Off Switching Energy:9μJ
Turn-On Switching Energy:27μJ	Turn-off Delay Time:20ns	Turn-on Delay Time:14ns
Zero Gate Voltage Drain Current:≤10μA

DonghaiSemiconductor DCEV450M170G2 SiC MOSFET

Continuous Drain Current:10A	Diode Forward Voltage:3.4 ~ 4V	Diode Max Current:37A
Diode Reverse Recovery Charge:50nC	Diode Reverse Recovery Time:21ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:370 ~ 600mΩ	Fall Time:10ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:15nC	Gate-Drain Charge:3nC	Gate-Source Charge:5nC
Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:260pF
Internal Gate Resistance:12Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:11pF
Package:TO-263-7	Peak Reverse Recovery Current:5A	Power Dissipation:115W
Pulsed Drain Current:22A	Recommended Gate-Source Voltage:0 ~ 15V	Reverse Transfer Capacitance:1pF
Rise Time:13ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:1.30℃/W	Transconductance:1.8 ~ 1.9S	Turn-Off Delay Time:20ns
Turn-Off Switching Energy:9μJ	Turn-On Delay Time:14ns	Turn-On Switching Energy:27μJ
Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCCF040M170G2 SiC MOSFET

Continuous Drain Current:60A	Diode Forward Voltage:3.9 ~ 4.2V	Diode Max Current:67A
Diode Reverse Recovery Charge:110nC	Diode Reverse Recovery Time:26ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:40 ~ 49mΩ	Fall Time:14ns	Gate Threshold Voltage:1.9 ~ 4V
Gate Total Charge:139nC	Gate-Drain Charge:16nC	Gate-Source Charge:43nC
Gate-Source Leakage Current:≤250nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:2746pF
Internal Gate Resistance:2.1Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:99pF
Package:TO-247-4	Peak Reverse Recovery Current:6A	Power Dissipation:357W
Pulsed Drain Current:210A	Reverse Transfer Capacitance:7.5pF	Rise Time:24ns
Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.39℃/W	Transconductance:23 ~ 27.4S
Turn-Off Delay Time:48ns	Turn-Off Switching Energy:198μJ	Turn-On Delay Time:26ns
Turn-On Switching Energy:820μJ	Zero Gate Voltage Drain Current:≤100μA

DonghaiSemiconductor DCCF080M170G2 SiC MOSFET

Continuous Drain Current:37A	Diode Forward Voltage:3.4 ~ 4V	Diode Max Current:37A
Diode Reverse Recovery Charge:257nC	Diode Reverse Recovery Time:21ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:80 ~ 96mΩ	Fall Time:6.7ns	Gate Threshold Voltage:1.9 ~ 4.0V
Gate Total Charge:71.2nC	Gate-Drain Charge:10.9nC	Gate-Source Charge:22.1nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10/+23V	Input Capacitance:1427pF
Internal Gate Resistance:3.4Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:56.6pF
Package:TO-247-4	Peak Reverse Recovery Current:20A	Power Dissipation:250W
Pulsed Drain Current:80A	Reverse Transfer Capacitance:4.1pF	Rise Time:13ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.60℃/W
Transconductance:10.0 ~ 10.5S	Turn-Off Delay Time:22ns	Turn-Off Switching Energy:75μJ
Turn-On Delay Time:14ns	Turn-On Switching Energy:589μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCCF020M170G2 SiC MOSFET

Continuous Drain Current:133A	Diode Forward Voltage:3.6 ~ 3.9V	Diode Max Current:133A
Diode Reverse Recovery Charge:290nC	Diode Reverse Recovery Time:41ns	Drain-Source Breakdown Voltage:1700V
Drain-Source On-State Resistance:18 ~ 32mΩ	Drain-Source Voltage:1700V	Fall Time:13ns
Gate Threshold Voltage:1.9 ~ 4V	Gate Total Charge:362nC	Gate-Drain Charge:50nC
Gate-Source Charge:78nC	Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ 23V
Input Capacitance:6858pF	Internal Gate Resistance:1.9Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:202pF	Package:TO-247-4	Peak Reverse Recovery Current:13A
Power Dissipation:714W	Pulsed Drain Current:270A	Recommended Gate-Source Voltage:-5 ~ 18V
Reverse Transfer Capacitance:12pF	Rise Time:26ns	Storage Temperature:-55 ~ 175℃
Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.21℃/W	Transconductance:44.4 ~ 46.5S
Turn-Off Delay Time:58ns	Turn-Off Switching Energy:0.6mJ	Turn-On Delay Time:28ns
Turn-On Switching Energy:2.2mJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCUK040M65G3 SiC MOSFET

Continuous Drain Current:58A	Diode Forward Voltage:3.9V	Diode Max Current:51A
Diode Reverse Recovery Charge:98nC	Diode Reverse Recovery Time:13ns	Drain-Source Breakdown Voltage:650V
Drain-Source On-State Resistance:52mΩ	Fall Time:6ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:40nC	Gate-Drain Charge:12nC	Gate-Source Charge:14nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ +23V	Input Capacitance:1305pF
Internal Gate Resistance:2Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:109pF
Package:TOLL	Peak Reverse Recovery Current:5A	Power Dissipation:212W
Pulsed Drain Current:170A	Reverse Transfer Capacitance:4.9pF	Rise Time:9ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.70℃/W
Turn-Off Delay Time:17ns	Turn-Off Switching Energy:44μJ	Turn-On Delay Time:7ns
Turn-On Switching Energy:133μJ	Zero Gate Voltage Drain Current:100μA

DonghaiSemiconductor DCUQ015M75G3 SiC MOSFET

Continuous Drain Current:140A	Diode Forward Voltage:3.9V	Diode Max Current:175A
Diode Reverse Recovery Charge:149nC	Diode Reverse Recovery Time:23ns	Drain-Source On-State Resistance:21mΩ
Drain-Source Voltage:750V	Fall Time:6.0ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:117nC	Gate-Source Leakage Current:100nA	Gate-Source Voltage:-10 ~ +23V
Input Capacitance:3654pF	Internal Gate Resistance:2.0Ω	Operating Junction Temperature:-55 ~ 175℃
Output Capacitance:278pF	Package:QDPAK	Peak Reverse Recovery Current:28A
Power Dissipation:429W	Pulsed Drain Current:350A	Reverse Transfer Capacitance:14pF
Rise Time:11.6ns	Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W
Thermal Resistance Junction-Case:0.30℃/W	Turn-Off Delay Time:30.6ns	Turn-Off Switching Energy:227μJ
Turn-On Delay Time:12.9ns	Turn-On Switching Energy:209μJ	Zero Gate Voltage Drain Current:10μA

DonghaiSemiconductor DCUK023M65G3 SiC MOSFET

Continuous Drain Current:100A	Diode Forward Voltage:3.9V	Diode Max Current:81A
Diode Reverse Recovery Charge:170nC	Diode Reverse Recovery Time:23ns	Drain-Source Breakdown Voltage:650V
Drain-Source On-State Resistance:33mΩ	Fall Time:10ns	Gate Threshold Voltage:2.0 ~ 4.0V
Gate Total Charge:70nC	Gate-Drain Charge:20nC	Gate-Source Charge:24nC
Gate-Source Leakage Current:250nA	Gate-Source Voltage:-10 ~ 23V	Input Capacitance:2434pF
Internal Gate Resistance:2.5Ω	Operating Junction Temperature:-55 ~ 175℃	Output Capacitance:159pF
Package:TOLL	Peak Reverse Recovery Current:9A	Power Dissipation:312W
Pulsed Drain Current:254A	Reverse Transfer Capacitance:10.7pF	Rise Time:16ns
Storage Temperature:-55 ~ 175℃	Thermal Resistance Junction-Ambient:40℃/W	Thermal Resistance Junction-Case:0.48℃/W
Turn-Off Delay Time:29ns	Turn-Off Switching Energy:94μJ	Turn-On Delay Time:12ns
Turn-On Switching Energy:138μJ	Zero Gate Voltage Drain Current:100μA

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