DonghaiSemiconductor DCCF040M75G3 SiC MOSFET-传感器专家网

产品概述

DCCF040M75G3 是一款 750V、60A 高压 N 沟道 SiC MOSFET，采用 TO-247-4 封装，典型导通电阻 40mΩ，专为高频、高效率和高可靠性功率变换系统而设计。凭借碳化硅（SiC）材料的优异特性，该器件在高压大电流工况下具备低导通损耗与良好的热管理能力。

建议在设计中充分评估散热条件与开关工况；采购前请获取并核对最新规格书参数；系统设计中请配置过压、过流及防静电保护措施，确保器件长期稳定运行。

DCCF040M75G3 MOSFET选型参数

规格项	参数值	勾选搜索替代
更多规格
Body Diode Forward Voltage	3.9 V
Body Diode Max Current	51 A
Body Diode Reverse Recovery Charge	97 nC
Continuous Drain Current	60 A
Drain-Source Breakdown Voltage	750 V
Drain-Source On-State Resistance	52 mΩ
Fall Time	6 ns
Gate Threshold Voltage	2.0 ~ 4.0 V
Gate Total Charge	39 nC
Gate-Drain Charge	13 nC
Gate-Source Charge	14 nC
Gate-Source Leakage Current	250 nA
Gate-Source Voltage	-10 ~ 23 V
Input Capacitance	1301 pF
Internal Gate Resistance	2 Ω
Junction-Ambient Thermal Resistance	40 ℃/W
Junction-Case Thermal Resistance	0.66 ℃/W
Operating Junction Temperature	-55 ~ 175 ℃
Output Capacitance	107 pF
Package	TO-247-4
Peak Reverse Recovery Current	5 A
Power Dissipation	227 W
Pulsed Drain Current	176 A
Recommended Gate-Source Voltage	-5 ~ 18 V
Reverse Recovery Time	13 ns
Reverse Transfer Capacitance	5 pF
Rise Time	9 ns
Storage Temperature	-55 ~ 175 ℃
Turn-Off Delay Time	18 ns
Turn-Off Switching Energy	45 μJ
Turn-On Delay Time	7 ns
Turn-On Switching Energy	128 μJ
Zero Gate Voltage Drain Current	100 μA