Continuous Drain Current:131A |
Diode Forward Voltage:3.9V |
Diode Max Current:175A |
Diode Reverse Recovery Charge:149nC |
Diode Reverse Recovery Time:43ns |
Drain-Source Breakdown Voltage:750V |
Drain-Source On-State Resistance:21mΩ |
Fall Time:6ns |
Gate Threshold Voltage:2.0 ~ 4.0V |
Gate Total Charge:117nC |
Gate-Drain Charge:44nC |
Gate-Source Charge:37nC |
Gate-Source Leakage Current:100nA |
Gate-Source Voltage:-10 ~ +23V |
Input Capacitance:3654pF |
Internal Gate Resistance:2Ω |
Operating Junction Temperature:-55 ~ 175℃ |
Output Capacitance:278pF |
Package:TOLL |
Peak Reverse Recovery Current:28A |
Power Dissipation:375W |
Pulsed Drain Current:330A |
Reverse Transfer Capacitance:14pF |
Rise Time:16.6ns |
Storage Temperature:-55 ~ 175℃ |
Thermal Resistance Junction-Ambient:40℃/W |
Thermal Resistance Junction-Case:0.40℃/W |
Turn-Off Delay Time:35.6ns |
Turn-Off Switching Energy:407μJ |
Turn-On Delay Time:14.9ns |
Turn-On Switching Energy:309μJ |
Zero Gate Voltage Drain Current:10μA |
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