工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65~3.30 V |
周期:500 μs |
封装类型:HVSOF5 |
工作温度范围:-40 to 185 F (-40 to 85 C) |
平均供电电流:200 μA |
操作点磁通密度:+/-3.0 mT |
最大功耗:536 mW |
磁滞:6.0 mT |
输出低电平电压:0.2 V |
输出类型:CMOS |
输出高电平电压:$V_{DD} - 0.2$ V |
静电放电(ESD)抗扰度:8kV (HBM) |
工作温度:-13 to 185 F (-25 to 85 C) |
产品类别:接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
工作温度范围:-13 to 185 F (-25 to 85 C) |
技术类型:霍尔效应接近传感器 |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
工作温度范围:-40 to 185 F (-40 to 85 C) |
技术类型:Hall Effect Proximity Sensor |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
封装尺寸:0.80mm x 0.80mm x 0.40mm |
封装类型:UCSP35L1 |
工作温度范围:-40°C to +85°C |
工作电压范围:1.65V to 3.6V |
平均工作电流:5.0μA (Typ) |
最大供电电压:-0.1V to +4.5V |
最大功耗:0.10W |
检测周期:50ms (Typ) |
检测磁场强度:±9.5mT (Typ) |
输出电流:±0.5mA |
输出类型:CMOS |
迟滞:0.9mT (Typ) |
静电放电(ESD)耐受:8kV (HBM) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
周期:50ms (Typ) |
封装尺寸:0.80mm x 0.80mm x 0.40mm |
工作温度范围:-40°C to +85°C |
工作电压范围:1.65V to 3.6V |
平均工作电流:5.0μA (Typ) |
检测磁场强度:±15.0mT (Typ) |
输出低电平电压:0.2V |
输出端口:OUT1 (S极输出), OUT2 (N极输出) |
输出类型:CMOS |
输出高电平电压:VDD - 0.2V |
静电放电 (ESD) 抗扰度:8kV (HBM) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
封装尺寸:0.80mm x 0.80mm x 0.40mm |
封装类型:UCSP35L1 |
工作温度范围:-40°C to +85°C |
工作电压范围:1.65V to 3.6V |
平均工作电流:5.0μA (Typ) |
检测周期:50ms (Typ) |
检测磁场强度:±24.0mT (Typ) |
输出引脚功能:OUT1=南极输出, OUT2=北极输出 |
输出类型:CMOS |
迟滞:1.6mT (Typ) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:霍尔效应接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
技术:Hall Effect Proximity Sensor |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65V to 3.6V |
周期:50ms (Typ) |
封装尺寸 (W x D x H):1.10mm x 1.40mm x 0.40mm |
封装类型:VSON04Z1114A |
工作温度范围:-40°C to +85°C |
工作点:±2.4mT (Typ) |
平均供电电流:4.4μA (Typ) |
输出类型:CMOS |
迟滞:0.4mT (Typ) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电流(平均):4.4μA (Typ) |
周期:50ms (Typ) |
封装尺寸(W x D x H):1.10mm x 1.40mm x 0.40mm |
封装类型:VSON04Z1114A |
工作温度范围:-40°C to +85°C |
工作点:±4.1mT (Typ) |
工作电压范围:1.65V to 3.6V |
输出引脚功能:OUT1=检测南极, OUT2=检测北极 |
输出类型:CMOS |
迟滞:0.8mT (Typ) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65V to 3.6V |
周期:50ms (Typ) |
封装尺寸 (W x D x H):1.10mm x 1.40mm x 0.40mm |
封装类型:VSON04Z1114A |
工作温度范围:-40°C to +85°C |
工作点:±6.3mT (Typ) |
平均供电电流:4.4μA (Typ) |
输出类型:CMOS |
迟滞:0.9mT (Typ) |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:4.50~5.50 V |
存储温度范围:-55 to 150 °C |
封装形式:SSOP5 |
工作温度范围:-40 to 85 °C |
工作磁场范围:+/-3.4 mT |
平均工作电流:2.0 mA |
输出低电平电压:≤0.2 V |
输出类型:CMOS |
输出高电平电压:VDD - 0.2 V |
迟滞范围:0.4 mT |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65~3.30 V |
周期:50 ms |
封装类型:HVSOF5 |
工作温度范围:-40 to 85 °C |
工作点磁场强度:+/-3.0 mT |
平均供电电流:5.0 μA |
磁滞:0.9 mT |
输出类型:CMOS |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65~3.60 V |
启动电流:2.8 mA |
周期:50 ms |
封装类型:UCSP35L1 |
工作温度范围:-40 to 85 °C |
工作点磁场强度:+/-6.3 mT |
平均供电电流:5.0 μA |
待机电流:1.8 μA |
磁滞:0.9 mT |
输出低电平电压:0.2 V |
输出类型:CMOS |
输出高电平电压:VDD-0.2 V |
释放点磁场强度:0.9 mT |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:Proximity Sensors |
Sensor Technology:Hall Effect Proximity Sensor |
供电电压范围:1.65~3.60 V |
启动电流:2.8 mA |
周期:50 ms |
封装类型:UCSP35L1 |
工作温度范围:-40 to 85 °C |
工作点磁场强度:+/-4.1 mT |
平均供电电流:5.0 μA |
待机电流:1.8 μA |
磁滞:0.8 mT |
输出低电平电压:≤0.2 V |
输出类型:CMOS |
输出高电平电压:VDD - 0.2 V |
释放点磁场强度:1.5~3.3 mT |
工作温度:-40 to 185 F (-40 to 85 C);-40 to 85 °C |
输出方式:CMOS |
供电电流(平均):4.0 μA |
检测周期:50 ms |
迟滞:0.9 mT |
封装形式:SSON004X1216 |
产品类别:Proximity Sensors |
工作电压范围:1.65~3.60 V |
Sensor Technology:Hall Effect Proximity Sensor |
工作模式:全极检测 |
操作点磁场强度:+/-3.3 mT |
静电放电(ESD)抗扰度:未提供 |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
技术:霍尔效应接近传感器 |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:霍尔效应接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
技术:Hall Effect Proximity Sensor |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
工作温度范围:-40 to 185 F (-40 to 85 C) |
技术类型:霍尔效应接近传感器 |
工作温度:-40 to 185 F (-40 to 85 C) |
产品类别:接近传感器 |
Sensor Technology:Hall Effect Proximity Sensor |
工作温度范围:-40 to 185 F (-40 to 85 C) |
技术类型:霍尔效应接近传感器 |
电气输出类型:数字输出 |
工作温度:-40 °C ~ +85 °C |
电源要求:2.3 V ~ 3.6 V |
开关频率:3.4 MHz |
检测距离范围:10 mm ~ 100 mm |
接口类型:I²C |
封装形式:WLGA-10 |
RoHS认证:符合 |
供电电流(典型):90 μA |
RoHS:Y |
商标:ROHM Semiconductor |
安装风格:SMD/SMT |
宽度:2.8 mm |
寿命周期:NRND:
不建议用于新设计。 |
封装:Reel |
封装 / 箱体:WLGA-10 |
封装尺寸(长×宽×高):2.8 mm × 2.8 mm × 0.9 mm |
工作电源电压:2.5 V |
工作电源电流:90 uA |
工厂包装数量:3000 |
待机电流:0.8 μA ~ 1.5 μA |
感应方式:Optical |
感应距离:10 mm to 100 mm |
描述/功能:Optical proximity sensor and ambient light sensor IC |
最大IrLED驱动电流:22 mA |
最大工作温度:+ 85 C |
最大频率:3.4 MHz |
最小工作温度:- 40 C |
测量精度(ALS):0.85 ~ 1.15 倍 |
电源电压-最大:3.6 V |
电源电压-最小:2.3 V |
电源电流(ALS模式):90 μA ~ 180 μA |
电源电流(PS模式):90 μA ~ 8.5 mA |
说明:接近传感器 DIGI AMBIENT LIGHT PROX SENSR 10PIN |
输出配置:Digital |
长度:2.8 mm |
高度:0.9 mm |
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