DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商,专注于先进功率器件的研发设计、封装制造和应用研究,为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年,总部位于无锡;公司致力于为客户提供高品质、高性价比功率器件产品,产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景:卓越功率器件产品和方案提供商。企业价值观:效率、创新、可靠、团队协同。企业使命:为美好生活,为绿色能源,贡献东海的力量。发展历程2004-2010年  公司成立,封装产线完成,为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH,入选国家高新技术企业,通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司,Trench MOS研发成功并量产,汽车电子IATF16949体系认证。2020-2022年  引入战略投资者,股改完成,FS-IGBT/SJ MOS量产,批量推出车规级产品。2023-2025年  新研发大楼启用;IGBT模块规模出货,自有制造能力建设提升,IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
  • DonghaiSemiconductor MBR20R45 SBD

    Certifications:RoHS
    Forward Voltage:0.47V
    Junction Capacitance:430pF
    Package:TO-252B
    Reverse Leakage Current:60μA
    Reverse Voltage:45V
  • DonghaiSemiconductor MBR60R100CT SBD

    DC Blocking Voltage:100V
    Forward Current:60A
    Forward Voltage:0.37V@1A; 0.44V@3A; 0.47V@5A; 0.54V@10A; 0.60V@15A; 0.66V@20A; 0.75V@30A
    Mark Name:MBR60R100CT
    Maximum Instantaneous Forward Voltage:0.37V@1A; 0.44V@3A; 0.47V@5A; 0.54V@10A; 0.60V@15A; 0.66V@20A; 0.75V@30A; 0.63V@30A 125℃
    Maximum Instantaneous Reverse:20μA@100V; 10mA@100V 125℃
    Package:TO-220C
    Package Type:TO-220
    Product Model:MBR60R100CT
    Quantity:1000/box
    Reverse Breakdown Voltage:≥100V
    Reverse Leakage Current:20μA@100V 25℃; 10mA@100V 125℃
    Reverse Voltage:100V
    RoHS:Pb-free
    Total Capacitance:840pF@10V/1MHz
  • DonghaiSemiconductor MBRE60R100CT SBD

    Average Forward Rectified Current:60A
    DC Blocking Voltage:100V
    Forward Voltage:0.37V@1A; 0.44V@3A; 0.47V@5A; 0.54V@10A; 0.60V@15A; 0.66V@20A; 0.75V@30A; 0.63V@30A,125℃
    Package:TO-263
    Reverse Leakage Current:20μA@100V; 10mA@100V,125℃
    Reverse Repetitive Peak Voltage:100V
    Total Capacitance:840pF@10V,1MHz
  • DonghaiSemiconductor MBR60100BCT SBD

    DC Blocking Voltage:100V
    DC Blocking Voltage IR=100uA:125V
    Forward Current:60A
    Forward Voltage Drop:0.79V
    Junction Capacitance:1100pF
    Maximum Instantaneous Forward Voltage:0.79V; 0.68V; 0.91V
    Maximum Instantaneous Forward Voltage IF=30A:0.79V
    Maximum Instantaneous Forward Voltage IF=30A TC=150℃:0.68V
    Maximum Instantaneous Forward Voltage IF=40A:0.91V
    Maximum Instantaneous Reverse Current:7µA; 20mA
    Maximum Instantaneous Reverse Current VR=100V:7µA
    Maximum Instantaneous Reverse Current VR=100V TC=125℃:20mA
    Package:TO-247
    Reverse Leakage Current:7µA
    Reverse Voltage:100V
    RoHS:Pb-free
    Total Capacitance:1100pF
    Total Capacitance VR=0V f=1MHz:1100pF
  • DonghaiSemiconductor HMBRD20R60 SBD

    Average Rectified Current:20A
    DC Blocking Voltage:60V
    Forward Voltage:0.55V
    Maximum Instantaneous Forward Voltage:0.63V
    Maximum Instantaneous Reverse Current:10mA
    Package:TO-252B
    Reverse Leakage Current:5uA
    RoHS Compliance:Pb-free
    Total Capacitance:600pF
  • DonghaiSemiconductor MBR60100CT SBD

    DC Blocking Voltage:100V
    Forward Current:60A
    Forward Voltage IF=15A:0.74V
    Forward Voltage IF=20A:0.77V ~ 0.83V
    Forward Voltage IF=30A:0.83V ~ 0.85V
    Forward Voltage IF=30A TC=125℃:≤0.75V
    Package:TO-220C
    Reverse Leakage Current VR=100V:5µA ~ 100µA
    Reverse Leakage Current VR=100V TC=125℃:≤20mA
    Reverse Voltage:100V
    Total Capacitance:405pF
  • DonghaiSemiconductor MBRE10200CT SBD

    Average Rectified Current:10A
    DC Blocking Voltage:200V
    Forward Voltage:0.97V
    Maximum Instantaneous Forward Voltage:0.85V; 0.75V; 0.97V
    Maximum Instantaneous Reverse Current:5µA; 10mA
    Maximum Reverse Voltage:200V
    Package:TO-263
    Reverse Leakage Current:50µA
    RoHS:Pb-free
    Total Capacitance:58pF
  • DonghaiSemiconductor HMBRE40200CT SBD

    DC Blocking Voltage:200 ~ 240V
    Forward Voltage:0.73 ~ 0.92V
    Junction Capacitance:290pF
    Maximum Instantaneous Forward Voltage IF=10A:0.79V
    Maximum Instantaneous Forward Voltage IF=15A:0.82V
    Maximum Instantaneous Forward Voltage IF=20A:0.86 ~ 0.92V
    Maximum Instantaneous Forward Voltage IF=20A TC=125°C:0.75V
    Maximum Instantaneous Forward Voltage IF=30A:0.90V
    Maximum Instantaneous Forward Voltage IF=5A:0.73V
    Maximum Instantaneous Reverse Current VR=200V:0.2 ~ 10µA
    Maximum Instantaneous Reverse Current VR=200V TC=125°C:0.3mA
    Maximum Instantaneous Reverse Current VR=200V TC=150°C:0.5mA
    Maximum Instantaneous Reverse Current VR=200V TC=175°C:5.0mA
    Package:TO-263
    Reverse Leakage Current:0.2µA ~ 5mA
    Reverse Voltage:200V
    RoHS:Pb-free
    Total Capacitance:290pF
  • DonghaiSemiconductor MBR20200 SBD

    Average Forward Current:20A
    Certifications:RoHS
    Forward Voltage:0.88V
    Junction Capacitance:90pF
    Package:TO-220-2L
    Reverse Leakage Current:10μA
    Reverse Voltage:200V
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