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DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年  公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年  引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年  新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
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  • DonghaiSemiconductor MBRD3045CT SBD

    Average Forward Current:30A
    Certifications:RoHS
    DC Blocking Voltage:45V
    DC Blocking Voltage Condition:IR=100μA
    Forward Voltage:0.53V
    Forward Voltage Condition:IF=10A
    Maximum Instantaneous Forward Voltage:0.53V
    Maximum Instantaneous Forward Voltage Condition:IF=10A
    Maximum Instantaneous Reverse Leakage Current:20mA
    Maximum Instantaneous Reverse Leakage Current Condition:VR=45V; TC=125℃
    Package:TO-252B
    Reverse Leakage Current:25μA
    Reverse Leakage Current Condition:VR=45V
    Reverse Voltage:45V
    Total Capacitance:400pF
    Total Capacitance Condition:VR=4V; f=1MHz

  • DonghaiSemiconductor MBR4045CT SBD

    Certifications:RoHS
    DC Blocking Voltage:45V
    Forward Current:40A
    Forward Voltage:0.41 ~ 0.65V
    Package:TO-220; TO-220F; TO-263
    Reverse Leakage Current:50uA ~ 30mA
    Reverse Voltage:45V
    Total Capacitance:855pF

  • DonghaiSemiconductor MBRD2060CT SBD

    Average Forward Current:20A
    Breakdown Voltage:73V @ 100μA
    DC Blocking Voltage:60V
    Forward Voltage:0.71V @ 10A; 0.83V @ 20A
    Maximum Instantaneous Forward Voltage:0.71V ~ 0.78V @ 10A; 0.60V @ 10A, 125℃; 0.83V @ 20A
    Maximum Instantaneous Reverse:3.0uA ~ 100uA @ 60V; 15mA @ 60V, 125℃
    Package:TO-252
    Reverse Leakage Current:≤100μA @ 60V; ≤15mA @ 60V, 125℃
    RoHS:Pb-free
    Total Capacitance:271pF @ 4V, 1MHz

  • DonghaiSemiconductor MBR4060CT SBD

    Average Forward Current:40A
    DC Blocking Voltage:60V
    Forward Voltage:0.58V
    Forward Voltage Max:0.90V
    Maximum Instantaneous Forward Voltage IF=15A:0.58V
    Maximum Instantaneous Forward Voltage IF=20A:0.65V
    Maximum Instantaneous Forward Voltage IF=20A Ta=125℃:0.68V
    Maximum Instantaneous Forward Voltage IF=30A:0.76V
    Maximum Instantaneous Reverse Current VR=60V:100µA
    Maximum Instantaneous Reverse Current VR=60V Ta=125℃:20mA
    Package:TO-220
    Reverse Leakage Current:≤100µA
    Reverse Voltage:60V
    Total Capacitance:750pF

  • DonghaiSemiconductor MBR3045NCT SBD

    DC Blocking Voltage:45 ~ 59V
    DC Blocking Voltage IR=100uA:45V
    Forward Voltage:0.53V; 0.59V; 0.79V
    Max Forward Current:30A
    Max Reverse Voltage:45V
    Maximum Instantaneous Forward Voltage IF=10A:0.53V
    Maximum Instantaneous Forward Voltage IF=15A:0.59V
    Maximum Instantaneous Forward Voltage IF=15A TC=125°C:0.55V
    Maximum Instantaneous Forward Voltage IF=20A:0.79V
    Maximum Instantaneous Reverse VR=45V:100uA
    Maximum Instantaneous Reverse VR=45V TC=125°C:20mA
    Package:TO-3PN
    Reverse Leakage Current:100uA; 20mA
    RoHS:Pb-free
    Total Capacitance:400pF
    Total Capacitance VR=4V f=1MHz:400pF

  • DonghaiSemiconductor MBR3045CT SBD

    Average Forward Rectified Current:30A
    Certifications:Pb-free
    Forward Voltage:0.53V; 0.59V; 0.79V
    Max Repetitive Reverse Voltage:45V
    Package:TO-220
    Reverse Leakage Current:25uA; 100uA
    Total Capacitance:400pF

  • DonghaiSemiconductor MBR20R60CT SBD

    Average Forward Current:20A
    DC Blocking Voltage:60V ~ 70V
    Forward Voltage:0.34V@1A; 0.39V@3A; 0.43V@5A; 0.51V@10A; 0.60V@10A
    Package:TO-220; TO-220F; TO-263; TO-3P
    Reverse Leakage Current:25μA@60V; 100μA@60V; 30mA@60V@125℃
    Reverse Voltage:60V
    Total Capacitance:460pF@10V/1MHz

  • DonghaiSemiconductor MBR1060CT SBD

    Average Forward Current:10A
    DC Blocking Voltage IR=100μA:60 ~ 73V
    Forward Voltage:0.69 ~ 1.1V
    Junction Capacitance:140pF
    Maximum Instantaneous Forward Voltage IF=10A:0.83 ~ 1.1V
    Maximum Instantaneous Forward Voltage IF=5A:0.69 ~ 0.78V
    Maximum Instantaneous Forward Voltage IF=5A TC=125℃:≤0.68V
    Maximum Instantaneous Reverse IR VR=60V:3.0 ~ 100μA
    Maximum Instantaneous Reverse IR VR=60V TC=125℃:≤15mA
    Package:TO-220; TO-252; TO-220F
    Reverse Leakage Current:100μA
    Reverse Repetitive Peak Voltage:60V
    Total Capacitance VR=4V f=1MHz:140pF

  • DonghaiSemiconductor MBR2045CT SBD

    DC Blocking Voltage:45 ~ 59V
    Forward Current:20A
    Forward Voltage:0.59 ~ 0.95V
    Maximum Instantaneous Forward Voltage (IF=10A):0.59 ~ 0.65V
    Maximum Instantaneous Forward Voltage (IF=10A, TC=125℃):≤0.55V
    Maximum Instantaneous Forward Voltage (IF=20A):0.79 ~ 0.95V
    Maximum Instantaneous Reverse Current (VR=45V):25 ~ 100μA
    Maximum Instantaneous Reverse Current (VR=45V, TC=125℃):≤20mA
    Package:TO-220C; TO-220M; TO-252
    Reverse Leakage Current:25 ~ 20000μA
    Reverse Voltage:45V
    Total Capacitance:310pF

  • DonghaiSemiconductor MBR20R45CT SBD

    Certifications:RoHS
    Forward Current:20A
    Forward Voltage:0.42V; 0.45V; 0.51V; 0.65V
    Package:TO-220; TO-220F; TO-263; TO-3P
    Reverse Leakage Current:60uA; 150uA; 50mA
    Reverse Voltage:45V
    Total Capacitance:430pF

  • DonghaiSemiconductor HMBRF40200CT SBD

    Certifications:RoHS
    DC Blocking Voltage:205V
    Forward Voltage:0.76V
    Mounting Type:Through Hole
    Operating Temperature Max:150℃
    Package:TO-220F
    Reverse Leakage Current:0.5µA
    Total Capacitance:200pF

  • DonghaiSemiconductor MBR1045CT SBD

    DC Blocking Voltage IR=100μA:45V
    Forward Current:10A
    Forward Voltage:0.77V@10A
    Junction Capacitance:180pF
    Manufacturer:DonghaiSemiconductor
    Maximum Instantaneous Forward Voltage IF=10A:0.77V
    Maximum Instantaneous Forward Voltage IF=5A:0.57V
    Maximum Instantaneous Forward Voltage IF=5A TC=125℃:0.55V
    Maximum Instantaneous Reverse VR=45V:100μA
    Maximum Instantaneous Reverse VR=45V TC=125℃:20mA
    Package:TO-220; TO-252
    Part Number:MBR1045CT
    Reverse Leakage Current:100μA@45V
    Reverse Voltage:45V
    Total Capacitance VR=4V f=1MHz:180pF

  • DonghaiSemiconductor HMBR40200NCT SBD

    Breakdown Voltage:205V
    Certifications:RoHS
    Forward Current:40A
    Forward Voltage:0.76V
    Package:TO-3PN
    Reverse Leakage Current:0.5uA
    Reverse Voltage:200V
    Total Capacitance:200pF

  • DonghaiSemiconductor HMBR40200CT SBD

    DC Blocking Voltage:230V
    Forward Current:40A
    Forward Voltage:0.76 ~ 0.9V
    Package:TO-220
    Reverse Leakage Current:≤5µA
    Reverse Voltage:200V
    Total Capacitance:200pF

  • DonghaiSemiconductor HMBR30200CT SBD

    Average Forward Current:30A
    DC Blocking Voltage:200V
    Forward Voltage:0.73 ~ 0.90V
    Package:TO-220; TO-220F; TO-263
    Reverse Leakage Current:50µA
    Total Capacitance:180pF

  • DonghaiSemiconductor HMBR30200NCT SBD

    Average Forward Current:30A
    DC Blocking Voltage:205 ~ 230V
    Forward Voltage:0.76V@5A; 0.83V@15A; 0.90V@30A
    Package:TO-3PN
    Reverse Leakage Current:0.5uA@200V; 500uA@200V/125℃
    RoHS Compliance:Pb-free
    Total Capacitance:200pF@5V/1MHz

  • DonghaiSemiconductor HMBRD10150CT SBD

    Certifications:RoHS
    Forward Current:10A
    Forward Voltage:0.83V
    Junction Capacitance:150pF
    Package:TO-252B
    Reverse Leakage Current:0.3µA
    Reverse Voltage:150V

  • DonghaiSemiconductor HMBR20200CT SBD

    Average Forward Current:20A
    Certifications:RoHS
    DC Blocking Voltage:205V
    DC Blocking Voltage IR=100μA:205V
    Forward Voltage:0.95V
    Maximum Instantaneous Forward Voltage IF=10A:0.95V
    Maximum Instantaneous Forward Voltage IF=10A TC=125℃:0.85V
    Maximum Instantaneous Forward Voltage IF=20A:1.2V
    Maximum Instantaneous Reverse VR=200V:10μA
    Maximum Instantaneous Reverse VR=200V TC=125℃:1mA
    Package:TO-220
    Reverse Leakage Current:10μA
    Reverse Voltage:200V
    Total Capacitance:90pF

  • DonghaiSemiconductor HMBR20150CT SBD

    Average Forward Current:20A
    DC Blocking Voltage:150V
    Forward Voltage:0.86V; 0.98V
    Forward Voltage (Tc=125℃):0.72V
    Maximum Reverse Voltage:150V
    Package:TO-220
    Reverse Leakage Current:≤5μA
    Reverse Leakage Current (Tc=125℃):≤1mA
    Total Capacitance:112pF

  • DonghaiSemiconductor HMBRD20100CT SBD

    Certifications:RoHS
    Forward Current:20A
    Forward Voltage:0.83 ~ 1.20V
    Junction Capacitance:154pF
    Package:TO-252B
    Reverse Leakage Current:0.3 ~ 5uA
    Reverse Voltage:100V

  • DonghaiSemiconductor HMBR20100CT SBD

    Average Forward Rectified Current:20A
    Certifications:RoHS
    DC Blocking Voltage:100V
    Forward Voltage:0.83V @ 10A; 0.95V @ 20A
    Package:TO-220
    Reverse Leakage Current:0.3μA @ 100V
    Reverse Voltage:100V
    Total Capacitance:154pF @ 4V, 1MHz

  • DonghaiSemiconductor MBR40100DCT SBD

    Average Forward Current:40A
    DC Blocking Voltage:105 ~ 130V
    Forward Voltage:0.62 ~ 1.10V
    Junction Capacitance:315pF
    Package:TO-3PN
    Reverse Leakage Current:3.5uA ~ 10mA
    Reverse Voltage:100V

  • DonghaiSemiconductor MBR60100NCT SBD

    DC Blocking Voltage:100V
    DC Blocking Voltage IR=100uA:100V
    Forward Voltage:0.77V
    Maximum Instantaneous Forward Voltage IF=30A:0.77V
    Maximum Instantaneous Forward Voltage IF=30A TC=150℃:0.67V
    Maximum Instantaneous Forward Voltage IF=40A:0.91V
    Maximum Instantaneous Reverse Current VR=100V:7uA
    Maximum Instantaneous Reverse Current VR=100V TC=125℃:20mA
    Package:TO-3PN
    Rated Current:60A
    Rated Voltage:100V
    Reverse Leakage Current:7uA
    RoHS:Pb-free
    Total Capacitance:1100pF
    Total Capacitance VR=0V f=1MHz:1100pF

  • DonghaiSemiconductor HMBR3060CT SBD

    Breakdown Voltage:60 ~ 71V
    Forward Current:30A
    Forward Voltage:0.63 ~ 0.90V
    Package:TO-220
    Reverse Leakage Current:2.5 ~ 20μA
    Reverse Voltage:60V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBR60150NCT SBD

    Forward Current:60A
    Forward Voltage:0.795V; 0.80V; 1.1V
    Package:TO-3PN
    Reverse Current:100µA; 20mA
    Reverse Voltage:150V
    Total Capacitance:415pF
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