DONGHAI 东海半导体SBD-型号-图片-传感器专家网

DONGHAI 东海半导体

江苏东海半导体股份有限公司是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。

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DonghaiSemiconductor MBRF10150CT SBD

Average Forward Rectified Current:10A	Maximum Forward Voltage (IF=10A):1.20V	Maximum Forward Voltage (IF=5A):0.90V
Maximum Forward Voltage (IF=5A, TC=125℃):0.80V	Maximum Repetitive Reverse Voltage:150V	Maximum Reverse Leakage Current (VR=150V):50µA
Maximum Reverse Leakage Current (VR=150V, TC=125℃):10mA	Package:TO-220F	Total Capacitance:73pF

DonghaiSemiconductor MBRD10150CT SBD

Average Forward Rectified Current:10A	DC Blocking Voltage:150V	Forward Voltage:0.92V
Maximum Instantaneous Forward Voltage:0.90V	Maximum Instantaneous Reverse Current:20uA	Maximum Reverse Voltage:150V
Package:TO-252	Reverse Leakage Current:5uA	RoHS:Pb-free
Total Capacitance:73pF

DonghaiSemiconductor MBR10150CT SBD

Average Forward Current:10A	DC Blocking Voltage:150V	Forward Voltage:0.92V
Junction Capacitance:73pF	Maximum Instantaneous Forward Voltage (IF=10A):1.20V	Maximum Instantaneous Forward Voltage (IF=5A):0.90V
Maximum Instantaneous Forward Voltage (IF=5A, TC=125℃):0.80V	Maximum Instantaneous Reverse Current (VR=150V):50μA	Maximum Instantaneous Reverse Current (VR=150V, TC=125℃):10mA
Package:TO-220; TO-220F; TO-263	Reverse Leakage Current:50μA	Reverse Voltage:150V
Total Capacitance (VR=0V, f=1MHz):73pF

DonghaiSemiconductor MBRF40100CT SBD

Average Forward Current:40A	Breakdown Voltage:105V	Forward Voltage:0.62V; 0.73V; 0.82V; 0.86V; 0.88V; 1.10V
Maximum Reverse Voltage:100V	Package:TO-220F; TO-220	Reverse Leakage Current:3.5uA; 100uA; 10mA
Total Capacitance:315pF

DonghaiSemiconductor MBR10R150CT SBD

Average Forward Rectified Current:10A	Maximum Forward Voltage:0.88V	Maximum Repetitive Reverse Voltage:150V
Maximum Reverse Leakage Current:20μA	Package:TO-220	Total Junction Capacitance:110pF

DonghaiSemiconductor MBRF30100CT SBD

DC Blocking Voltage:100V	Forward Current:30A	Forward Voltage:0.47V @ 1A; 0.60V @ 3A; 0.68V @ 5A; 0.77V @ 10A; 0.83V @ 15A; 0.75V @ 15A 125℃; 0.89V @ 20A; 0.91V @ 30A
Package:TO-220F	Reverse Leakage Current:2.6μA @ 100V; 2.0mA @ 100V 125℃	Total Capacitance:209pF

DonghaiSemiconductor MBR40100CT SBD

Certifications:RoHS	Forward Current:40A	Forward Voltage:0.62V@5A; 0.73V@10A; 0.82V@20A; 0.88V@30A
Package:TO-220; TO-220F	Reverse Breakdown Voltage:105 ~ 130V	Reverse Leakage Current:3.5uA@100V; 100uA@100V,125℃
Reverse Voltage:100V	Total Capacitance:315pF

DonghaiSemiconductor MBRD30100CT SBD

DC Blocking Voltage:100V ~ 120V	Forward Current:30A	Forward Voltage:0.91V
Junction Capacitance:209pF	Maximum Instantaneous Forward Voltage (IF=10A):0.79V	Maximum Instantaneous Forward Voltage (IF=15A):0.83V ~ 0.86V
Maximum Instantaneous Forward Voltage (IF=15A, TA=125℃):0.75V	Maximum Instantaneous Forward Voltage (IF=30A):0.91V ~ 1.1V	Maximum Instantaneous Reverse Current (VR=100V):2.6uA ~ 20uA
Maximum Instantaneous Reverse Current (VR=100V, TA=125℃):20mA	Package:TO-252B	Reverse Voltage:100V
RoHS:Pb-free	Total Capacitance (VR=4V, f=1MHz):209pF

DonghaiSemiconductor MBR30100CT SBD

DC Blocking Voltage:100 ~ 120V	Forward Voltage:0.78 ~ 1.1V	Package:TO-220
Reverse Leakage Current:2.6 ~ 20µA	Total Capacitance:300pF

DonghaiSemiconductor MBRF30R100CT SBD

Average Forward Current:30A	DC Blocking Voltage:100V	DC Blocking Voltage (Typ):114V
Forward Voltage:0.37V@1A; 0.73V@15A(Max)	Maximum Instantaneous Forward Voltage:0.37V@1A; 0.44V@3A; 0.50V@5A; 0.60V@10A; 0.66V@15A; 0.76V@20A	Maximum Instantaneous Forward Voltage (125℃):0.59V@15A
Maximum Instantaneous Reverse Current:100μA@100V; 10mA@100V/125℃	Package:TO-220F	Reverse Leakage Current:20μA@100V; 10mA@125℃
Reverse Voltage:100V	RoHS:Pb-free	Total Capacitance:840pF@1V/1MHz
Total Capacitance (1MHz):840pF@10V/1MHz

DonghaiSemiconductor MBR30R100CT SBD

DC Blocking Voltage:100V	Forward Voltage:0.37V@1A; 0.44V@3A; 0.50V@5A; 0.60V@10A; 0.66V@15A; 0.59V@15A,125℃; 0.76V@20A	Package:TO-220; TO-220F
Product Model:MBR30R100CT; MBRF30R100CT	Reverse Leakage Current:20μA@100V; 10mA@100V,125℃	RoHS:Pb-free
Total Capacitance:840pF@10V,1MHz

DonghaiSemiconductor MBRD20100CT SBD

DC Blocking Voltage:100V	Forward Current:20A	Maximum Instantaneous Forward Voltage:0.85V
Maximum Instantaneous Reverse Leakage Current:5uA	Package:TO-252	Reverse Voltage:100V
RoHS:Pb-free	Total Capacitance:154pF	Typical Forward Voltage Drop:0.83V
Typical Reverse Leakage Current:0.3µA

DonghaiSemiconductor MBRF20R100CT SBD

Breakdown Voltage:100V(Min)/114V(Typ)	Forward Current:20A	Forward Voltage:0.38V@1A; 0.44V@3A; 0.50V@5A; 0.65V@10A; 0.73V@15A
Package:TO-220F	Packaging:Tube	Reverse Leakage Current:25μA@100V; 10mA@100V/125℃
Reverse Voltage:100V	RoHS:Pb-free	Total Capacitance:580pF@10V/1MHz

DonghaiSemiconductor MBRF20100CT SBD

DC Blocking Voltage:105V	Forward Voltage:0.81V; 0.95V	Package:TO-220F
Rated Current:20A	Rated Voltage:100V	Reverse Leakage Current:100uA; 10mA
RoHS:Pb-free	Total Capacitance:155pF

DonghaiSemiconductor MBR20R100CT SBD

Average Forward Rectified Current:20A	Certifications:RoHS	DC Blocking Voltage:100V
Forward Voltage:0.38V (IF=1A); 0.44V (IF=3A); 0.50V (IF=5A); 0.65V (IF=10A); 0.59V (IF=10A, TC=125℃); 0.73V (IF=15A)	Junction Capacitance:580pF (VR=10V, f=1MHz)	Maximum Repetitive Reverse Voltage:100V
Package:TO-220; TO-220F; TO-263	Reverse Leakage Current:25μA (VR=100V); 10mA (VR=100V, TC=125℃)

DonghaiSemiconductor MBR20100CT SBD

Average Forward Current:20A	Certifications:RoHS	Forward Voltage:0.85V@10A; 1.1V@20A
Maximum Reverse Voltage:100V	Package:TO-220; TO-220F; TO-252; TO-263	Reverse Leakage Current:100μA@100V
Total Capacitance:155pF@4V, 1MHz

DonghaiSemiconductor MBR20R80CT SBD

Forward Current:20A	Forward Voltage:0.36V@1A; 0.42V@3A; 0.46V@5A; 0.57V@10A; 0.50V@10A,125℃; 0.70V@15A	Package:TO-220; TO-220F; TO-263
Reverse Leakage Current:25uA@80V; 100uA@80V,125℃	Reverse Voltage:80V	Total Capacitance:460pF@10V,1MHz

DonghaiSemiconductor MBR10100CT SBD

Certifications:RoHS	DC Blocking Voltage Min:105V	DC Blocking Voltage Typ:120V
Forward Voltage Max:1.2V	Forward Voltage Typ:0.81V	Package:TO-220
Rated Current:10A	Rated Voltage:100V	Reverse Leakage Current Max:100uA
Total Capacitance:91pF	Total Capacitance Test Frequency:1MHz

DonghaiSemiconductor MBRD3060CT SBD

Average Forward Current:30A	DC Blocking Voltage:60V	Forward Voltage:0.83V
Junction Capacitance:180pF	Maximum Instantaneous Forward Voltage IF=15A:0.71V	Maximum Instantaneous Forward Voltage IF=15A TC=125℃:0.60V
Maximum Instantaneous Forward Voltage IF=20A:0.79V	Maximum Instantaneous Forward Voltage IF=30A:0.83V	Maximum Instantaneous Reverse Current VR=60V:10uA
Maximum Instantaneous Reverse Current VR=60V TC=125℃:20mA	Package:TO-252	Reverse Leakage Current:10uA
Reverse Voltage:60V	RoHS:Pb-free	Total Capacitance:180pF

DonghaiSemiconductor MBRF2060CT SBD

Average Forward Current:20A	DC Blocking Voltage:60V	DC Blocking Voltage Min:60V
DC Blocking Voltage Typ:73V	Forward Voltage:0.78V	Forward Voltage Max:1.1V
Forward Voltage Max Test Current:20A	Forward Voltage Test Current:10A	Maximum Instantaneous Forward Voltage IF=10A:0.78V
Maximum Instantaneous Forward Voltage IF=10A TC=125℃:0.68V	Maximum Instantaneous Forward Voltage IF=20A:1.1V	Maximum Instantaneous Reverse IR VR=60V:100µA
Maximum Instantaneous Reverse IR VR=60V TC=125℃:15mA	Package:TO-220F	Reverse Leakage Current:100µA
Reverse Leakage Current Test Voltage:60V	Total Capacitance:271pF	Total Capacitance Test Frequency:1MHz
Total Capacitance Test Voltage:4V

DonghaiSemiconductor MBRF10100CT SBD

Average Forward Current:10A	DC Blocking Voltage:105 ~ 120V	Forward Voltage:0.85V; 1.2V
Package:TO-220F	Reverse Leakage Current:100uA; 15mA	Reverse Voltage:100V
Total Capacitance:91pF

DonghaiSemiconductor MBR3060CT SBD

Certifications:RoHS; Pb-free	DC Blocking Voltage:60V	Forward Voltage:0.61V @ 15A; 0.71V @ 20A; 0.79V @ 30A
Maximum Instantaneous Forward Voltage:0.70V @ 15A; 0.60V @ 15A, 125℃; 0.8V @ 20A; 0.85V @ 30A	Maximum Instantaneous Reverse Current:100μA @ 60V; 20mA @ 60V, 125℃	Package:TO-220; TO-220F; TO-263
Reverse Leakage Current:100μA @ 60V; 20mA @ 60V	Total Capacitance:180pF @ 0V/1MHz

DonghaiSemiconductor MBR10R100CT SBD

Average Forward Rectified Current:10A	Forward Voltage:0.88V; 0.95V	Maximum Reverse Voltage:100V
Package:TO-220	Reverse Breakdown Voltage:114V	Reverse Leakage Current:15uA; 100uA
Reverse Leakage Current at 125°C:10mA	Total Capacitance:460pF

DonghaiSemiconductor MBR3060NCT SBD

Average Forward Current:30A	Certifications:RoHS	DC Blocking Voltage:60V
DC Blocking Voltage IR=100uA:60V	Forward Voltage:0.70 ~ 0.90V	Maximum Instantaneous Forward Voltage IF=15A:0.70V
Maximum Instantaneous Forward Voltage IF=15A TC=125°C:0.59V	Maximum Instantaneous Forward Voltage IF=20A:0.79V	Maximum Instantaneous Forward Voltage IF=30A:0.82V
Maximum Instantaneous Reverse Current VR=60V:10uA	Maximum Instantaneous Reverse Current VR=60V TC=125°C:20mA	Package:TO-3PN
Part Number:MBR3060NCT	Reverse Leakage Current:10 ~ 50uA	Total Capacitance:180pF
Total Capacitance VR=0V f=1MHz:180pF

DonghaiSemiconductor MBRF20R60CT SBD

Average Forward Current:20A	DC Blocking Voltage:60V	Forward Voltage (IF=10A):0.51V
Forward Voltage (IF=10A, TC=125℃):0.50V	Forward Voltage (IF=1A):0.34V	Forward Voltage (IF=3A):0.39V
Forward Voltage (IF=5A):0.43V	Package:TO-220F	Reverse Leakage Current (VR=60V):25uA
Reverse Leakage Current (VR=60V, TC=125℃):30mA	Total Capacitance:460pF

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