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DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年  公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年  引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年  新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
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  • DonghaiSemiconductor MBRD30200CT SBD

    Breakdown Voltage:210 ~ 250V
    Forward Current:30A
    Forward Voltage:0.85 ~ 0.91V
    Junction Capacitance:220pF
    Package:TO-252
    Reverse Leakage Current:0.5 ~ 10uA
    Reverse Voltage:200V

  • DonghaiSemiconductor MBR30200NCT SBD

    Average Forward Current:30A
    DC Blocking Voltage:200V
    DC Blocking Voltage Min:200V
    DC Blocking Voltage Typ:240V
    Forward Voltage:0.77V@5A; 0.91V@30A
    Maximum Instantaneous Forward Voltage:0.77V@5A; 0.81V@10A; 0.8V@15A; 0.75V@15A/125℃; 0.88V@20A; 0.91V@30A
    Maximum Instantaneous Reverse Current:100μA@200V; 20mA@200V/125℃
    Maximum Reverse Voltage:200V
    Package:TO-3PN
    Reverse Leakage Current:100μA@200V
    Total Capacitance:180pF@10V/1MHz

  • DonghaiSemiconductor MBR30200CT SBD

    Certifications:RoHS
    Forward Current:30A
    Forward Voltage:0.85V@15A; 0.93V@30A
    Junction Capacitance:180pF@10V,1MHz
    Package:TO-220
    Reverse Leakage Current:5μA@200V; 20mA@200V,125℃
    Reverse Voltage:200V

  • DonghaiSemiconductor MBR40200CT SBD

    Average Forward Current:40A
    Certifications:Pb-free; RoHS
    DC Blocking Voltage:205V
    Forward Voltage:0.88V
    Junction Capacitance:180pF
    Maximum Instantaneous Forward Voltage:0.95V
    Maximum Instantaneous Reverse Current:100μA
    Package:TO-220
    Reverse Breakdown Voltage:205 ~ 240V
    Reverse Leakage Current:2μA
    Reverse Voltage:200V

  • DonghaiSemiconductor MBRF40200CT SBD

    Average Forward Current:40A
    Certifications:RoHS
    DC Blocking Voltage:205 ~ 230V
    Forward Voltage:0.76V
    Forward Voltage IF=10A:0.80V
    Forward Voltage IF=20A:0.83V
    Forward Voltage IF=20A TC=125℃:0.73V
    Forward Voltage IF=30A:0.86V
    Package:TO-220F
    Rated Reverse Voltage:200V
    Reverse Leakage Current:0.5µA
    Reverse Leakage Current VR=200V TC=125℃:1.0mA
    Total Capacitance:200pF

  • DonghaiSemiconductor MBRF20200CT SBD

    Average Forward Rectified Current:20A
    Certifications:RoHS; Pb-free
    DC Blocking Voltage:205V
    Forward Voltage:0.95V
    Junction Capacitance:90pF
    Maximum Reverse Voltage:200V
    Package:TO-220F
    Reverse Leakage Current:20μA

  • DonghaiSemiconductor MBRF30200CT SBD

    Certifications:RoHS
    Forward Current:30A
    Forward Voltage:0.91V
    Package:TO-220F
    Reverse Leakage Current:100uA
    Reverse Voltage:200V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBR40200NCT SBD

    DC Blocking Voltage:240V
    Forward Current:40A
    Forward Voltage IF=20A:0.88V
    Forward Voltage IF=20A TC=125℃:0.85V
    Forward Voltage IF=30A:0.91V
    Package:TO-3PN
    Reverse Leakage Current VR=200V:2uA
    Reverse Leakage Current VR=200V TC=125℃:20mA
    Reverse Voltage:200V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBRD20200CT SBD

    DC Blocking Voltage:230V
    Forward Voltage:0.95V
    Maximum Instantaneous Forward Voltage:0.95V
    Maximum Instantaneous Reverse Current:100uA
    Package:TO-252
    Rated Current:20A
    Rated Voltage:200V
    Reverse Leakage Current:2uA
    Total Capacitance:90pF

  • DonghaiSemiconductor MBRF40150CT SBD

    Average Forward Current:40A
    DC Blocking Voltage:150V
    Forward Voltage:0.67V(IF=5A); 0.76V(IF=10A); 0.82V(IF=20A); 0.90V(IF=30A)
    Package:TO-220F
    Part Number:MBRF40150CT
    Reverse Leakage Current:100μA(VR=150V); 10mA(VR=150V, Tc=125℃)
    RoHS:Pb-free
    Total Capacitance:165pF(VR=4V, f=1MHz)

  • DonghaiSemiconductor MBRF10200CT SBD

    DC Blocking Voltage:200V
    Forward Current:10A
    Forward Voltage:0.85V; 0.97V
    Junction Capacitance:58pF
    Mark Name:MBRF10200CT
    Maximum Instantaneous Forward Voltage IF=10A:0.97V
    Maximum Instantaneous Forward Voltage IF=5A:0.85V
    Maximum Instantaneous Forward Voltage IF=5A TC=125℃:0.73V
    Maximum Instantaneous Reverse Current VR=200V:5µA
    Maximum Instantaneous Reverse Current VR=200V TC=125℃:10mA
    Package:TO-220F
    Package Type:Tube
    Product Model:MBRF10200CT
    Quantity:1000/box
    Reverse Leakage Current:5µA
    Reverse Voltage:200V
    RoHS:Pb-free

  • DonghaiSemiconductor MBR20200CT SBD

    Average Rectified Current:20A
    DC Blocking Voltage:205V
    Forward Voltage:0.87V
    Package:TO-220
    Reverse Leakage Current:100µA
    RoHS Compliance:Pb-free
    Total Capacitance:90pF

  • DonghaiSemiconductor MBRF30150CT SBD

    DC Blocking Voltage:150V
    Forward Current:30A
    Forward Voltage:0.82V
    Maximum Instantaneous Forward Voltage:0.90V
    Maximum Instantaneous Reverse Leakage Current:100μA
    Package:TO-220F
    Reverse Leakage Current:100μA
    Reverse Voltage:150V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBR40150CT SBD

    Forward Current:40A
    Forward Voltage @ 20A:0.82V
    Forward Voltage @ 5A:0.67V
    Junction Capacitance:290pF
    Package:TO-220
    Reverse Leakage Current @ 100V:1.5μA
    Reverse Voltage:150V

  • DonghaiSemiconductor MBR10200CT SBD

    Average Forward Rectified Current:10A
    Forward Voltage:0.85V@5A; 0.97V@10A
    Maximum Repetitive Reverse Voltage:200V
    Package:TO-220
    Reverse Leakage Current:50uA@200V
    Total Capacitance:58pF

  • DonghaiSemiconductor MBR20R200CT SBD

    Average Forward Current:20A
    DC Blocking Voltage:200V
    DC Blocking Voltage IR=200uA:200V
    Forward Voltage:0.81V
    Maximum Instantaneous Forward Voltage:0.88V
    Maximum Instantaneous Forward Voltage IF=10A:0.81V
    Maximum Instantaneous Forward Voltage IF=10A TC=125℃:0.71V
    Maximum Instantaneous Forward Voltage IF=15A:0.84V
    Maximum Instantaneous Reverse Current:50μA
    Maximum Instantaneous Reverse Current VR=200V:5μA
    Maximum Instantaneous Reverse Current VR=200V TC=125℃:10mA
    Package:TO-220
    Reverse Leakage Current:5μA
    Reverse Voltage:200V
    RoHS:Pb-free
    Total Capacitance:175pF
    Total Capacitance VR=0V f=1MHz:175pF

  • DonghaiSemiconductor MBR30150CT SBD

    Average Forward Current:30A
    DC Blocking Voltage:150V
    DC Blocking Voltage Test Current:100µA
    Forward Voltage:0.82V
    Forward Voltage Test Current:15A
    Maximum Instantaneous Forward Voltage:0.82V
    Maximum Instantaneous Forward Voltage Test Current:15A
    Maximum Instantaneous Forward Voltage Test Temperature:25℃
    Maximum Instantaneous Reverse Current:100µA
    Maximum Instantaneous Reverse Current Test Temperature:25℃
    Maximum Instantaneous Reverse Current Test Voltage:150V
    Package:TO-220
    Reverse Leakage Current:100µA
    Reverse Leakage Current Test Voltage:150V
    RoHS:Pb-free
    Total Capacitance:180pF
    Total Capacitance Test Frequency:1MHz
    Total Capacitance Test Voltage:0V

  • DonghaiSemiconductor MBRD30150CT SBD

    Average Forward Current:30A
    Certifications:RoHS
    Forward Voltage:0.82V; 0.90V
    Package:TO-252B
    Reverse Leakage Current:100μA
    Reverse Voltage:150V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBRF30R150CT SBD

    DC Blocking Voltage:187V
    DC Blocking Voltage IR=200uA:187V
    Forward Current:30A
    Forward Voltage:0.75V; 0.78V; 0.85V
    Maximum Instantaneous Forward Voltage IF=10A:0.75V
    Maximum Instantaneous Forward Voltage IF=15A:0.78V
    Maximum Instantaneous Forward Voltage IF=15A TC=125°C:0.75V
    Maximum Instantaneous Forward Voltage IF=20A:0.85V
    Maximum Instantaneous Reverse Current VR=150V:50μA
    Maximum Instantaneous Reverse Current VR=150V TC=125°C:10mA
    Package:TO-220F
    Reverse Leakage Current:50μA
    Reverse Voltage:150V
    Total Capacitance:290pF
    Total Capacitance VR=0V f=1MHz:290pF

  • DonghaiSemiconductor MBR30R150CT SBD

    Certifications:RoHS
    DC Blocking Voltage:150V
    Forward Current:30A
    Forward Voltage:0.80V
    Maximum Instantaneous Forward Voltage IF=15A:0.80V
    Maximum Instantaneous Forward Voltage IF=15A TC=125℃:0.68V
    Maximum Instantaneous Forward Voltage IF=30A:0.87V
    Maximum Instantaneous Reverse Current VR=150V:5uA
    Maximum Instantaneous Reverse Current VR=150V TC=125℃:8mA
    Package:TO-220
    Package Type:TO-220; TO-220F
    Product Model:MBR30R150CT; MBRF30R150CT
    Reverse Leakage Current:5uA
    Reverse Voltage:150V
    Total Capacitance:220pF

  • DonghaiSemiconductor MBRD20150CT SBD

    DC Blocking Voltage:150V
    Forward Current:20A
    Forward Voltage:0.95V @20A
    Junction Capacitance:110pF
    Maximum Instantaneous Forward Voltage IF=10A:0.86V
    Maximum Instantaneous Forward Voltage IF=10A TC=125℃:0.80V
    Maximum Instantaneous Forward Voltage IF=20A:0.95V
    Maximum Instantaneous Reverse Current VR=150V:5uA
    Maximum Instantaneous Reverse Current VR=150V TC=125℃:10mA
    Package:TO-252
    Reverse Leakage Current:50uA @150V
    Reverse Voltage:150V
    RoHS:Pb-free
    Total Capacitance:110pF

  • DonghaiSemiconductor MBRF20R150CT SBD

    Breakdown Voltage:150V
    Certifications:RoHS
    Forward Current:20A
    Forward Voltage:0.78V; 0.85V
    Package:TO-220F
    Reverse Leakage Current:100μA
    Reverse Voltage:150V
    Total Capacitance:180pF

  • DonghaiSemiconductor MBRF20150CT SBD

    Average Forward Current:20A
    Maximum Instantaneous Forward Voltage:0.90V; 1.20V
    Maximum Instantaneous Reverse Leakage Current:50uA; 10mA
    Maximum Reverse Voltage:150V
    Package:TO-220F
    Product Model:MBRF20150CT
    RoHS:Pb-free
    Total Capacitance:110pF

  • DonghaiSemiconductor MBR20150CT SBD

    Forward Voltage:0.95V
    Forward Voltage IF=10A:0.90V
    Forward Voltage IF=10A TC=125℃:0.80V
    Forward Voltage IF=20A:1.20V
    Max Forward Current:20A
    Max Reverse Voltage:150V
    Package:TO-220; TO-220F; TO-263
    Reverse Leakage Current:50uA
    Reverse Leakage Current VR=150V:50uA
    Reverse Leakage Current VR=150V TC=125℃:10mA
    Total Capacitance:110pF

  • DonghaiSemiconductor MBR20R150CT SBD

    Average Forward Rectified Current:20A
    DC Blocking Voltage:150V
    DC Blocking Voltage IR=200µA:150V
    Forward Voltage:0.85V
    Maximum Instantaneous Forward Voltage IF=10A:0.78V
    Maximum Instantaneous Forward Voltage IF=10A TC=125℃:0.70V
    Maximum Instantaneous Forward Voltage IF=15A:0.81V
    Maximum Instantaneous Forward Voltage IF=20A:0.85V
    Maximum Instantaneous Reverse Current VR=150V:100µA
    Maximum Instantaneous Reverse Current VR=150V TC=125℃:10mA
    Package:TO-220
    Reverse Leakage Current:100µA
    Total Capacitance:180pF
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