DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商,专注于先进功率器件的研发设计、封装制造和应用研究,为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年,总部位于无锡;公司致力于为客户提供高品质、高性价比功率器件产品,产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景:卓越功率器件产品和方案提供商。企业价值观:效率、创新、可靠、团队协同。企业使命:为美好生活,为绿色能源,贡献东海的力量。发展历程2004-2010年  公司成立,封装产线完成,为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH,入选国家高新技术企业,通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司,Trench MOS研发成功并量产,汽车电子IATF16949体系认证。2020-2022年  引入战略投资者,股改完成,FS-IGBT/SJ MOS量产,批量推出车规级产品。2023-2025年  新研发大楼启用;IGBT模块规模出货,自有制造能力建设提升,IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
  • DonghaiSemiconductor DTF080N07N Trench MOSFET

    Continuous Drain Current:45A
    Diode Forward Voltage:1.2V
    Diode Max Current:45A
    Diode Reverse Recovery Charge:21nC
    Diode Reverse Recovery Time:29ns
    Drain-Source Breakdown Voltage:68V
    Drain-Source On-State Resistance:9.0mΩ
    Fall Time:11ns
    Gate Plateau Voltage:5.8V
    Gate Resistance:1.4Ω
    Gate Threshold Voltage:2.0 ~ 4.0V
    Gate Total Charge:59nC
    Gate-Drain Charge:19nC
    Gate-Source Charge:17nC
    Gate-Source Leakage Current:100nA
    Gate-Source Voltage:±20V
    Input Capacitance:2859pF
    Operating Junction Temperature:-55 ~ 150℃
    Output Capacitance:193pF
    Package:TO-220F
    Power Dissipation:37W
    Pulsed Drain Current:181A
    Reverse Transfer Capacitance:160pF
    Rise Time:28ns
    Storage Temperature:-55 ~ 150℃
    Thermal Resistance Junction-Ambient:85℃/W
    Thermal Resistance Junction-Case:3.4℃/W
    Transconductance:36S
    Turn-Off Delay Time:34ns
    Turn-On Delay Time:13ns
    Zero Gate Voltage Drain Current:100μA
  • DonghaiSemiconductor DTD100N06L Trench MOSFET

    Body Diode Forward Voltage:≤1.2V
    Continuous Drain Current:72A
    Drain-Source On-State Resistance:8.5mΩ
    Drain-Source Voltage:60V
    Fall Time:14ns
    Gate Threshold Voltage:1.0 ~ 2.0V
    Gate-Source Voltage:±20V
    Input Capacitance:3467pF
    Operating Junction Temperature:-55 ~ 150℃
    Output Capacitance:175pF
    Package:TO-252
    Pulsed Drain Current:287A
    Reverse Transfer Capacitance:149pF
    Rise Time:25ns
    Storage Temperature:-55 ~ 150℃
    Thermal Resistance Junction-to-Ambient:75℃/W
    Thermal Resistance Junction-to-Case:1.6℃/W
    Total Gate Charge:64nC
    Turn-Off Delay Time:55ns
    Turn-On Delay Time:8.5ns
  • DonghaiSemiconductor DTD300N06L Trench MOSFET

    Continuous Drain Current:29A
    Diode Forward Voltage:1.2V
    Diode Max Current:29A
    Diode Reverse Recovery Charge:8.1nC
    Diode Reverse Recovery Time:12ns
    Drain-Source Breakdown Voltage:60V
    Drain-Source On-State Resistance:35mΩ
    Gate Plateau Voltage:2.9V
    Gate Threshold Voltage:1.0 ~ 2.0V
    Gate Total Charge:21nC
    Gate-Drain Charge:3.3nC
    Gate-Source Charge:3.7nC
    Gate-Source Leakage Current:100nA
    Gate-Source Voltage:±20V
    Input Capacitance:1151pF
    Operating Junction Temperature:-55 ~ 150℃
    Output Capacitance:65pF
    Package:TO-252
    Power Dissipation:40W
    Pulsed Drain Current:114A
    Reverse Transfer Capacitance:49pF
    Rise Time:14ns
    Storage Temperature:-55 ~ 150℃
    Thermal Resistance Junction-Ambient:85℃/W
    Thermal Resistance Junction-Case:3.1℃/W
    Turn-Off Delay Time:23ns
    Turn-On Delay Time:4.6ns
    Zero Gate Voltage Drain Current:100μA

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