Continuous Drain Current:45A |
Diode Forward Voltage:1.2V |
Diode Max Current:45A |
Diode Reverse Recovery Charge:21nC |
Diode Reverse Recovery Time:29ns |
Drain-Source Breakdown Voltage:68V |
Drain-Source On-State Resistance:9.0mΩ |
Fall Time:11ns |
Gate Plateau Voltage:5.8V |
Gate Resistance:1.4Ω |
Gate Threshold Voltage:2.0 ~ 4.0V |
Gate Total Charge:59nC |
Gate-Drain Charge:19nC |
Gate-Source Charge:17nC |
Gate-Source Leakage Current:100nA |
Gate-Source Voltage:±20V |
Input Capacitance:2859pF |
Operating Junction Temperature:-55 ~ 150℃ |
Output Capacitance:193pF |
Package:TO-220F |
Power Dissipation:37W |
Pulsed Drain Current:181A |
Reverse Transfer Capacitance:160pF |
Rise Time:28ns |
Storage Temperature:-55 ~ 150℃ |
Thermal Resistance Junction-Ambient:85℃/W |
Thermal Resistance Junction-Case:3.4℃/W |
Transconductance:36S |
Turn-Off Delay Time:34ns |
Turn-On Delay Time:13ns |
Zero Gate Voltage Drain Current:100μA |
Body Diode Forward Voltage:≤1.2V |
Continuous Drain Current:72A |
Drain-Source On-State Resistance:8.5mΩ |
Drain-Source Voltage:60V |
Fall Time:14ns |
Gate Threshold Voltage:1.0 ~ 2.0V |
Gate-Source Voltage:±20V |
Input Capacitance:3467pF |
Operating Junction Temperature:-55 ~ 150℃ |
Output Capacitance:175pF |
Package:TO-252 |
Pulsed Drain Current:287A |
Reverse Transfer Capacitance:149pF |
Rise Time:25ns |
Storage Temperature:-55 ~ 150℃ |
Thermal Resistance Junction-to-Ambient:75℃/W |
Thermal Resistance Junction-to-Case:1.6℃/W |
Total Gate Charge:64nC |
Turn-Off Delay Time:55ns |
Turn-On Delay Time:8.5ns |
Continuous Drain Current:29A |
Diode Forward Voltage:1.2V |
Diode Max Current:29A |
Diode Reverse Recovery Charge:8.1nC |
Diode Reverse Recovery Time:12ns |
Drain-Source Breakdown Voltage:60V |
Drain-Source On-State Resistance:35mΩ |
Gate Plateau Voltage:2.9V |
Gate Threshold Voltage:1.0 ~ 2.0V |
Gate Total Charge:21nC |
Gate-Drain Charge:3.3nC |
Gate-Source Charge:3.7nC |
Gate-Source Leakage Current:100nA |
Gate-Source Voltage:±20V |
Input Capacitance:1151pF |
Operating Junction Temperature:-55 ~ 150℃ |
Output Capacitance:65pF |
Package:TO-252 |
Power Dissipation:40W |
Pulsed Drain Current:114A |
Reverse Transfer Capacitance:49pF |
Rise Time:14ns |
Storage Temperature:-55 ~ 150℃ |
Thermal Resistance Junction-Ambient:85℃/W |
Thermal Resistance Junction-Case:3.1℃/W |
Turn-Off Delay Time:23ns |
Turn-On Delay Time:4.6ns |
Zero Gate Voltage Drain Current:100μA |
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