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DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年  公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年  引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年  新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
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  • DonghaiSemiconductor MUR6030NCT FRD

    封装:TO-3PN
    Maximum Average Forward Rectified Current:60A
    Maximum DC Blocking Voltage:320 ~ 360V
    Maximum Instantaneous Forward Voltage:1.00V (IF=30A); 1.15V (IF=40A)
    Maximum Instantaneous Reverse Current:5μA (VR=300V); 1mA (VR=300V, TC=150℃)
    Maximum Repetitive Reverse Voltage:300V
    Maximum Reverse Recovery Time:31 ~ 45ns
    Total Capacitance:600pF (VR=0V, f=1MHz)

  • DonghaiSemiconductor MUR80FU40BCT FRD

    正向电流:80A
    正向电压:1.40V
    封装:TO-247
    反向漏电流:5μA
    反向恢复时间:50ns
    DC Blocking Voltage:420V
    Maximum Instantaneous Forward Voltage:1.60V
    Maximum Instantaneous Reverse Current:1mA
    Maximum Reverse Voltage:400V
    RoHS:Pb-free
    Total Capacitance:705pF

  • DonghaiSemiconductor MUR80FU30DCT FRD

    封装:TO-3PN
    反向恢复时间:35 ~ 45ns
    Certifications:RoHS
    DC Blocking Voltage:310 ~ 350V
    Maximum Average Rectified Current:80A
    Maximum Instantaneous Forward Voltage:0.95 ~ 1.5V
    Maximum Instantaneous Reverse Current:1mA
    Total Capacitance:615pF

  • DonghaiSemiconductor MUR9040BCT FRD

    正向电流:90A
    正向电压:1.30V
    封装:TO-247
    反向漏电流:5μA
    反向恢复时间:38ns
    DC Blocking Voltage:400V
    DC Blocking Voltage Typ:450V
    Forward Voltage Max:1.50V
    Reverse Recovery Time Max:50ns
    Total Capacitance:730pF

  • DonghaiSemiconductor MUR80FU40DCT FRD

    正向电压:1.2V
    结电容:730pF
    封装:TO-3PN
    反向恢复时间:46ns
    Average Forward Rectified Current:80A
    Certifications:RoHS; Pb-free
    DC Blocking Voltage:400 ~ 450V
    Peak Repetitive Reverse Voltage:400V
    Peak Reverse Recovery Current:4.6A
    Reverse Recovery Charge:110nC

  • DonghaiSemiconductor MUR4060BCT FRD

    正向电压:1.32V
    封装:TO-247
    反向漏电流:5μA
    反向恢复时间:34ns
    反向电压:600V
    Average Forward Current:40A
    Certifications:RoHS
    DC Blocking Voltage:620V
    DC Blocking Voltage IR=100uA:620V
    Forward Voltage Test Condition:20A
    Maximum Instantaneous Forward Voltage IF=20A:1.32V
    Maximum Instantaneous Forward Voltage IF=20A TC=150°C:1.45V
    Maximum Instantaneous Forward Voltage IF=30A:1.42V
    Maximum Instantaneous Reverse Current VR=600V:5μA
    Maximum Instantaneous Reverse Current VR=600V TC=150°C:1mA
    Maximum Reverse Recovery Time VR=30V IF=1A dl/dt=50A/us:34ns
    Reverse Leakage Current Test Condition:600V/25℃
    Total Capacitance:355pF

  • DonghaiSemiconductor MUR80FU40NCT FRD

    封装:TO-3PN
    反向漏电流:5µA
    反向恢复时间:34ns
    DC Blocking Voltage:450V
    DC Blocking Voltage IR=100µA:450V
    Forward Voltage Drop:1.25V
    Maximum Forward Current:80A
    Maximum Instantaneous Forward Voltage:1.50V
    Maximum Instantaneous Forward Voltage IF=30A:1.16V
    Maximum Instantaneous Forward Voltage IF=40A:1.25V
    Maximum Instantaneous Forward Voltage IF=40A TC=150℃:1.35V
    Maximum Instantaneous Forward Voltage IF=50A:1.60V
    Maximum Instantaneous Reverse Current:1mA
    Maximum Instantaneous Reverse Current VR=400V:5µA
    Maximum Instantaneous Reverse Current VR=400V TC=150℃:1mA
    Maximum Reverse Recovery Time:50ns
    Rated Reverse Voltage:400V
    Total Capacitance:500pF
    Total Capacitance VR=0V f=1MHz:500pF

  • DonghaiSemiconductor MUR3060NCT FRD

    正向电流:30A
    正向电压:1.05 ~ 1.65V
    封装:TO-3PN
    反向漏电流:5uA
    反向恢复时间:32 ~ 45ns
    DC Blocking Voltage:610 ~ 650V
    Maximum Reverse Voltage:600V
    RoHS:Pb-free
    Total Capacitance:265pF

  • DonghaiSemiconductor MUR6060DCT FRD

    正向电压:1.30V
    结电容:43pF
    封装:TO-3PN
    反向漏电流:5uA
    反向恢复时间:50ns
    DC Blocking Voltage:660V
    Maximum Instantaneous Forward Voltage:1.30V
    Maximum Instantaneous Reverse Current:5uA
    Maximum Reverse Recovery Current:3.08A
    Rated Current:60A
    Rated Voltage:600V
    Reverse Recovery Charge:172nc
    Total Capacitance:43pF

  • DonghaiSemiconductor MUR10065BCT FRD

    封装:TO-247
    反向恢复时间:35 ~ 37ns
    Breakdown Voltage:730V
    DC Blocking Voltage:650V
    Forward Voltage Drop:1.55V
    Maximum Instantaneous Forward Voltage:1.35V; 1.43V; 1.55V; 1.58V
    Maximum Instantaneous Reverse Current:5μA; 1mA
    Maximum Reverse Recovery Current:8A
    Maximum Reverse Recovery Time:37ns; 35ns; 82ns
    Packaging:Tube
    Product Model:MUR10065BCT
    Rated Current:100A
    Rated Voltage:650V
    Reverse Recovery Charge:287nC
    RoHS:Pb-free
    Total Capacitance:600pF

  • DonghaiSemiconductor MUR8060DCT FRD

    正向电流:80A
    正向电压:1.35V; 1.45V; 1.50V
    封装:TO-3PN
    反向漏电流:5μA
    反向恢复时间:38ns; 132ns; 193ns
    反向电压:600V
    Certifications:RoHS
    DC Blocking Voltage:620 ~ 730V
    Reverse Recovery Charge:278nC; 1491nC
    Reverse Recovery Current:3.6A; 11.5A
    Total Capacitance:45pF

  • DonghaiSemiconductor MUR1560A FRD

    正向电流:15A
    正向电压:1.32 ~ 1.65V
    结电容:190pF
    封装:TO-220-2L; TO-220F-2L
    反向漏电流:5μA
    反向恢复时间:27 ~ 35ns
    反向电压:600V
    Certifications:RoHS
    DC Blocking Voltage:620 ~ 660V

  • DonghaiSemiconductor MUR15FU120-V11 FRD

    正向电流:15 ~ 20A
    正向电压:1.35 ~ 2.5V
    封装:TO-220-2L
    反向漏电流:5 ~ 500uA
    反向恢复时间:55 ~ 80ns
    反向电压:1200 ~ 1300V
    Duty Cycle:2%
    Pulse Width:300µs
    Total Capacitance:150pF

  • DonghaiSemiconductor MUR2060A FRD

    正向电流:20A
    正向电压:1.40V
    封装:TO-220C-2L; TO-220F-2L
    反向恢复时间:32 ~ 40ns
    反向电压:600V
    DC Blocking Voltage:610V
    DC Blocking Voltage IR=100uA:610V
    Maximum Instantaneous Forward Voltage IF=10A:1.20V
    Maximum Instantaneous Forward Voltage IF=15A:1.35V
    Maximum Instantaneous Forward Voltage IF=20A:1.40 ~ 1.70V
    Maximum Instantaneous Forward Voltage IF=20A TC=150°C:1.55V
    Maximum Instantaneous Forward Voltage IF=30A:1.65V
    Maximum Instantaneous Forward Voltage IF=5A:1.05V
    Maximum Instantaneous Reverse Current VR=600V:5uA
    Maximum Instantaneous Reverse Current VR=600V Ta=150°C:500uA
    Maximum Reverse Recovery Time IF=0.5A IR=1A IRR=0.25A:32 ~ 40ns
    Maximum Reverse Recovery Time VR=30V IF=1A -dl/dt=50A/us:30 ~ 40ns
    RoHS:Pb-free
    Total Capacitance:220pF
    Total Capacitance VR=0V f=1MHz:220pF

  • DonghaiSemiconductor MUR30FU60 FRD

    正向电压:2.2V
    DC Blocking Voltage:610V
    Forward Voltage IF=20A:1.9V
    Forward Voltage IF=30A:2.2V
    Forward Voltage IF=30A TC=150℃:2.2V
    Forward Voltage IF=40A:2.7V
    Max Forward Current:30A
    Reverse Current VR=600V:5uA
    Reverse Current VR=600V TC=150℃:1.0mA
    Reverse Recovery Charge:65nC
    Reverse Recovery Current:2.5A
    Reverse Recovery Time IF=0.5A IR=1A IRR=0.25A:25ns
    Reverse Recovery Time VR=30V IF=1A -dI/dt=200A/us:23ns
    Reverse Recovery Time VR=400V IF=20A -dI/dt=200A/us:45ns
    RoHS:Pb-free
    Total Capacitance VR=0V f=1MHz:550pF
    反向恢复时间:25ns
    封装:TO-220-2L
    最大反向电压:600V

  • DonghaiSemiconductor MUR40FU60 FRD

    正向电流:40A
    正向电压:1.95V
    封装:TO-220-2L
    反向漏电流:5uA
    反向恢复时间:40ns
    反向电压:600V
    Breakdown Voltage:650V
    Reverse Recovery Charge:150nC
    Reverse Recovery Current:3.8A
    Total Capacitance:50pF

  • DonghaiSemiconductor MUR6030NCS FRD

    正向电压:1.05V
    封装:TO-3PN
    反向漏电流:5uA
    DC Blocking Voltage:310V
    Maximum Instantaneous Forward Voltage:1.15V
    Maximum Instantaneous Reverse Current:5uA
    Maximum Reverse Recovery Time:45ns
    Rated Current:30A
    Rated Voltage:300V
    RoHS:Pb-free
    Total Capacitance:500pF

  • DonghaiSemiconductor MURF860 FRD

    正向电流:8A
    封装:TO-220F-2L
    反向恢复时间:25 ~ 30ns
    DC Blocking Voltage:610 ~ 650V
    Maximum Instantaneous Forward Voltage:1.34 ~ 1.6V
    Maximum Instantaneous Reverse Current:5µA
    Total Capacitance:80pF

  • DonghaiSemiconductor MURF10FU60 FRD

    正向电流:10A
    正向电压:2.1 ~ 2.5V
    封装:TO-220F-2L
    反向电流:5uA
    反向恢复时间:19 ~ 25ns
    反向电压:600V
    Certifications:Pb-free
    DC Blocking Voltage:610 ~ 640V
    Reverse Recovery Charge:52nC
    Reverse Recovery Current:3.8A
    Total Capacitance:115pF

  • DonghaiSemiconductor MURF1560A FRD

    封装:TO-220F-2L
    反向恢复时间:27 ~ 35ns
    DC Blocking Voltage:620 ~ 660V
    Maximum Instantaneous Forward Voltage:1.25 ~ 1.65V
    Maximum Instantaneous Reverse Current:5 ~ 500μA
    Total Capacitance:190pF

  • DonghaiSemiconductor MURF3060 FRD

    正向电流:30A
    正向电压:1.35V
    封装:TO-220F-2L
    反向电流:5µA
    反向恢复时间:36ns
    反向电压:600V
    DC Blocking Voltage:610V
    DC Blocking Voltage IR=100uA:610V
    Maximum Instantaneous Forward Voltage:1.80V
    Maximum Instantaneous Forward Voltage IF=20A:1.28V
    Maximum Instantaneous Forward Voltage IF=30A TC=150°C:1.60V
    Maximum Instantaneous Forward Voltage IF=40A:1.55V
    Maximum Instantaneous Reverse Current:1mA
    Maximum Instantaneous Reverse Current VR=600V TC=150°C:1mA
    Maximum Reverse Recovery Current:7A
    Maximum Reverse Recovery Current VR=300V IF=30A -dI/dt=200A/us:7A
    Maximum Reverse Recovery Time:45ns
    Maximum Reverse Recovery Time IF=0.5A IR=1A IRR=0.25A:45ns
    Maximum Reverse Recovery Time VR=300V IF=30A -dI/dt=200A/us:75ns
    Maximum Reverse Recovery Time VR=30V IF=1A -dI/dt=200A/us:45ns
    Reverse Recovery Charge:210nC
    Reverse Recovery Charge VR=300V IF=30A -dI/dt=200A/us:210nC
    Total Capacitance:550pF
    Total Capacitance VR=0V f=1MHz:550pF

  • DonghaiSemiconductor MUR6060 FRD

    正向电流:60A
    正向电压:1.4 ~ 1.9V
    封装:TO-247-2L
    反向漏电流:5µA
    反向恢复时间:42 ~ 65ns
    DC Blocking Voltage:620 ~ 670V
    RoHS:Pb-free
    Total Capacitance:680pF

  • DonghaiSemiconductor MUR6065 FRD

    正向电流:60A
    正向电压:1.65V
    封装:TO-247-2L
    反向漏电流:5µA
    反向恢复时间:35ns
    反向电压:650V
    Certifications:Pb-free
    DC Blocking Voltage:650V
    Forward Voltage Max:2.0V
    Reverse Recovery Charge:287nC
    Reverse Recovery Current:8A
    Reverse Recovery Time Max:50ns
    Total Capacitance:600pF
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