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DONGHAI 东海半导体
江苏东海半导体股份有限公司  是国内一流的功率器件产品供应商，专注于先进功率器件的研发设计、封装制造和应用研究，为客户提供IGBT单管/模块、中低压MOS、高压MOS、FRD、SiC Diode/MOS/模块、GaN、IPM等全面功率器件产品解决方案。东海半导体成立于2004年，总部位于无锡；公司致力于为客户提供高品质、高性价比功率器件产品，产品广泛应用于光伏储能、新能源汽车、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。企业文化企业愿景：卓越功率器件产品和方案提供商。企业价值观：效率、创新、可靠、团队协同。企业使命：为美好生活，为绿色能源，贡献东海的力量。发展历程2004-2010年  公司成立，封装产线完成，为国内外头部公司提供封装代工。2011-2016年  推出自有品牌WXDH，入选国家高新技术企业，通过ISO9001质量体系认证。2017-2019年  战略转型为研发型产品公司，Trench MOS研发成功并量产，汽车电子IATF16949体系认证。2020-2022年  引入战略投资者，股改完成，FS-IGBT/SJ MOS量产，批量推出车规级产品。2023-2025年  新研发大楼启用；IGBT模块规模出货，自有制造能力建设提升，IPM/GaN/MEMS…荣誉资质主要产品MOSFET、IGBT、SiC MOSFET/SBD、汽车电子Automotive、二极管Diode、IPM智能功率模块、三端稳压IC应用领域产品广泛应用于机器人/具身智能、AI服务器电源、新能源汽车及充电桩、光伏储能、工业控制、逆变焊机、电源、电动工具、轻型电动车、锂电保护等领域。
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  • DonghaiSemiconductor MUR15FU120 FRD

    正向电压:2.3V ~ 3.0V
    封装:TO-220C-2L; TO-220F-2L
    反向漏电流:5μA
    反向恢复时间:48ns ~ 60ns
    Forward Voltage (150℃):2.8V
    Forward Voltage (30A):2.9V ~ 3.5V
    Maximum Forward Current:15A
    Reverse Blocking Voltage:1200V
    Reverse Leakage Current (150℃):500μA
    Total Capacitance:150pF

  • DonghaiSemiconductor MUR30120 FRD

    封装:TO-247-2L
    Average Rectified Current:30A
    DC Blocking Voltage:1200V
    Forward Voltage Drop:2.7V
    Maximum Instantaneous Forward Voltage:3.5V
    Maximum Instantaneous Forward Voltage at 150°C:2.8V
    Maximum Instantaneous Forward Voltage at 40A:3.3V
    Maximum Reverse Current:5uA
    Maximum Reverse Current at 150°C:500uA
    Maximum Reverse Recovery Time:60ns
    Maximum Reverse Voltage:1200V
    Peak Reverse Recovery Current:5.8A
    Reverse Recovery Charge:280nC
    RoHS:Pb-free
    Total Capacitance:375pF

  • DonghaiSemiconductor MUR40120DCT FRD

    结电容:185pF
    封装:TO-3P; TO-3PN; TO-247
    反向恢复时间:60ns
    反向电压:1200V
    Certifications:RoHS
    DC Blocking Voltage:1200V
    Maximum Instantaneous Forward Voltage:2.1V

  • DonghaiSemiconductor MUR30120DCT FRD

    封装:TO-3P; TO-3PN; TO-247
    反向漏电流:5uA
    反向恢复时间:48ns
    DC Blocking Voltage:1200V; 1350V
    Maximum Forward Current:30A
    Maximum Instantaneous Forward Voltage:1.8V; 2.0V; 1.7V; 2.3V
    Maximum Instantaneous Reverse Current:5uA; 5mA
    Maximum Reverse Recovery Time:48ns; 60ns
    Maximum Reverse Voltage:1200V
    RoHS Compliance:Pb-free
    Total Capacitance:150pF
    Typical Forward Voltage:2.3V

  • DonghaiSemiconductor MUR4060 FRD

    封装:TO-220-2
    反向恢复时间:37 ~ 50ns
    DC Blocking Voltage:620 ~ 650V
    Forward Voltage Drop:1.35V
    Maximum Instantaneous Forward Voltage:1.50V
    Maximum Instantaneous Reverse Current:5uA
    Maximum Reverse Voltage:600V
    Rated Forward Current:40A
    Total Capacitance:730pF

  • DonghaiSemiconductor MUR3060DCT FRD

    封装:TO-3P
    反向恢复时间:33 ~ 50ns
    Average Forward Current:30A
    DC Blocking Voltage:620 ~ 660V
    Forward Voltage IF=15A:1.35 ~ 1.6V
    Forward Voltage IF=15A TC=150℃:≤1.45V
    Forward Voltage IF=20A:1.35 ~ 1.8V
    Reverse Current VR=600V:≤5μA
    Reverse Current VR=600V TC=150℃:≤1mA
    Total Capacitance:265pF

  • DonghaiSemiconductor MUR4060DCT FRD

    正向电压:1.32 ~ 1.7V
    封装:TO-3P
    反向漏电流:5uA
    反向恢复时间:34 ~ 50ns
    Average Forward Current:40A
    DC Blocking Voltage:620 ~ 660V
    Total Capacitance:355pF

  • DonghaiSemiconductor MUR8120 FRD

    正向电流:8A
    正向电压:1.75V
    封装:Tube
    反向漏电流:5µA
    反向恢复时间:28ns
    反向电压:1200V
    DC Blocking Voltage:1200V
    Mark Name:MUR8120; MURF8120
    Maximum Instantaneous Forward Voltage:2.2V
    Maximum Reverse Recovery Time:45ns
    Package Type:TO-220C-2L; TO-220F-2L
    Product Model:MUR8120; MURF8120
    Quantity:1000/box
    RoHS:Pb-free
    Total Capacitance:75pF

  • DonghaiSemiconductor MUR2060 FRD

    正向电流:20A
    正向电压:1.65V
    封装:TO-220C; TO-220F
    反向漏电流:5uA
    反向恢复时间:45ns
    反向电压:600V
    Compliance:Pb-free
    DC Blocking Voltage:610V
    DC Blocking Voltage IR=100uA:610V
    Maximum Instantaneous Forward Voltage IF=10A:1.20V
    Maximum Instantaneous Forward Voltage IF=15A:1.35V
    Maximum Instantaneous Forward Voltage IF=20A:1.40V
    Maximum Instantaneous Forward Voltage IF=20A TC=150°C:1.55V
    Maximum Instantaneous Forward Voltage IF=30A:1.65V
    Maximum Instantaneous Forward Voltage IF=5A:1.05V
    Maximum Instantaneous Reverse Current VR=600V:5uA
    Maximum Instantaneous Reverse Current VR=600V Ta=150°C:500uA
    Maximum Reverse Recovery Time VR=30V IF=1A -dl/dt=50A/us:45ns
    Total Capacitance:220pF
    Total Capacitance VR=0V f=1MHz:220pF

  • DonghaiSemiconductor MUR3060 FRD

    封装:TO-220C-2L
    Average Rectified Current:30A
    DC Blocking Voltage:610V
    DC Breakdown Voltage:610V
    Maximum Instantaneous Forward Voltage:1.60V
    Maximum Instantaneous Reverse Leakage Current:1mA
    Maximum Reverse Leakage Current:5uA
    Maximum Reverse Recovery Current:9.9A
    Maximum Reverse Recovery Time:50ns
    Rated Voltage:600V
    Reverse Recovery Charge:172nC
    RoHS:Pb-free
    Total Capacitance:43pF
    Typical Forward Voltage Drop:1.30V

  • DonghaiSemiconductor MUR1660CT FRD

    正向电流:16A
    封装:TO-220; TO-220F; TO-263
    DC Blocking Voltage:610V
    Maximum Instantaneous Forward Voltage:1.6V
    Maximum Instantaneous Forward Voltage (150°C):1.4V
    Maximum Instantaneous Forward Voltage (16A):1.8V
    Maximum Reverse Recovery Time:35ns
    Maximum Reverse Voltage:600V
    Reverse Leakage Current (600V):5uA
    Reverse Leakage Current (600V, 150°C):500uA
    Total Capacitance:80pF

  • DonghaiSemiconductor MUR2060CT FRD

    正向电流:20A
    正向电压:1.35V
    封装:TO-220
    反向恢复时间:40ns
    反向电压:600V
    DC Blocking Voltage:610V
    Maximum Instantaneous Forward Voltage IF=10A:1.6V
    Maximum Instantaneous Forward Voltage IF=10A TC=150°C:1.45V
    Maximum Instantaneous Forward Voltage IF=15A:1.8V
    Maximum Instantaneous Reverse Current VR=600V:5µA
    Maximum Instantaneous Reverse Current VR=600V TC=150°C:1mA
    Maximum Reverse Recovery Time:40ns
    Total Capacitance:115pF

  • DonghaiSemiconductor MUR1560 FRD

    正向电流:15A
    正向电压:1.33V
    封装:TO-220-2L
    反向漏电流:1.0µA
    反向恢复时间:31 ~ 40ns
    反向电压:600V
    DC Blocking Voltage:610 ~ 650V
    Total Capacitance:220pF

  • DonghaiSemiconductor MUR1060CT FRD

    封装:TO-220
    反向电流:≤5µA
    反向恢复时间:25 ~ 35ns
    Certifications:Pb-free
    DC Blocking Voltage:610 ~ 640V
    Forward Voltage IF=10A:1.55 ~ 1.8V
    Forward Voltage IF=5A:1.35 ~ 1.6V
    Forward Voltage IF=5A TC=150°C:≤1.45V
    Reverse Current TC=150°C:≤500µA
    Total Capacitance:58pF

  • DonghaiSemiconductor MUR1060 FRD

    正向电流:10A
    正向电压:1.30 ~ 1.60V
    封装:TO-220-2; TO-220F-2L
    反向漏电流:5µA
    反向恢复时间:29 ~ 40ns
    反向电压:600V
    DC Blocking Voltage:610 ~ 650V
    Maximum Instantaneous Forward Voltage (IF=10A, TC=150°C):1.50V
    Maximum Instantaneous Forward Voltage (IF=15A):1.8V
    Maximum Instantaneous Reverse Current (VR=600V, TC=150°C):2mA
    RoHS:Pb-free
    Total Capacitance:220pF

  • DonghaiSemiconductor MUR860 FRD

    封装:TO-220-2L; TO-220F-2L
    反向恢复时间:25 ~ 35ns
    Average Forward Current:8A
    DC Blocking Voltage:610 ~ 650V
    Maximum Instantaneous Forward Voltage:1.34 ~ 1.6V
    Maximum Instantaneous Forward Voltage (IF=16A):1.65V
    Maximum Instantaneous Forward Voltage (TC=150°C):1.15V
    Maximum Reverse Recovery Current:5μA
    Maximum Reverse Recovery Current (TC=150°C):1mA
    Total Capacitance:80pF

  • DonghaiSemiconductor MUR5040DCT FRD

    正向电流:50A
    封装:TO-3P; TO-3PN; TO-247
    反向电压:400V
    DC Blocking Voltage IR=100uA:410 ~ 460V
    Maximum Instantaneous Forward Voltage IF=10A:1.09V
    Maximum Instantaneous Forward Voltage IF=15A:1.15V
    Maximum Instantaneous Forward Voltage IF=20A:1.21V
    Maximum Instantaneous Forward Voltage IF=25A:1.25 ~ 1.40V
    Maximum Instantaneous Forward Voltage IF=25A TC=150°C:1.25V
    Maximum Instantaneous Forward Voltage IF=30A:1.32 ~ 1.60V
    Maximum Instantaneous Forward Voltage IF=5A:0.99V
    Maximum Instantaneous Reverse Current VR=400V:5uA
    Maximum Instantaneous Reverse Current VR=400V TC=150°C:500uA
    Maximum Reverse Recovery Time VR=30V IF=1A -dl/dt=50A/us:32 ~ 45ns
    Total Capacitance VR=0V f=1MHz:470pF

  • DonghaiSemiconductor MUR4540DCT FRD

    正向电压:0.95V; 1.21 ~ 1.40V; 0.99V; 1.09V; 1.65V; 1.15 ~ 1.35V; 1.2V
    封装:TO-3PN
    反向电流:≤500µA; ≤1.0µA
    反向恢复时间:30 ~ 45ns; 32 ~ 45ns
    Certifications:Pb-free
    DC Blocking Voltage:410 ~ 460V
    Total Capacitance:470pF

  • DonghaiSemiconductor MUR3040DCT FRD

    正向电流:30A
    封装:TO-3P
    反向恢复时间:26ns
    反向电压:400V
    DC Blocking Voltage:410V
    Maximum Instantaneous Forward Voltage:1.2V; 1.25V; 1.38V
    Maximum Instantaneous Forward Voltage (IF=20A):1.38V
    Maximum Instantaneous Forward Voltage (Tc=150°C):1.30V
    Maximum Instantaneous Reverse Current:5µA
    Maximum Instantaneous Reverse Current (Tc=150°C):1mA
    Product Model:MUR3040DCT
    RoHS:Pb-free
    Total Capacitance:205pF

  • DonghaiSemiconductor MUR3040 FRD

    正向电流:30A
    正向电压:1.25V
    结电容:470pF
    封装:TO-220-2L
    反向漏电流:5μA
    反向恢复时间:31ns
    反向电压:400V
    DC Blocking Voltage:410V

  • DonghaiSemiconductor MUR2040 FRD

    正向电流:20A
    正向电压:1.21V
    封装:TO-220-2
    反向漏电流:5μA
    反向恢复时间:31ns
    反向电压:400V
    Certifications:RoHS
    DC Blocking Voltage:410V
    Total Capacitance:470pF

  • DonghaiSemiconductor MUR2040CT FRD

    正向电压:1.15 ~ 1.5V
    封装:TO-220; TO-220F; TO-3P; TO-3PN; TO-263
    反向漏电流:5µA
    反向恢复时间:26 ~ 35ns
    Certifications:RoHS
    DC Blocking Voltage:410 ~ 440V
    Total Capacitance:155pF

  • DonghaiSemiconductor MUR1640CT FRD

    正向电流:16A
    正向电压:1.25V
    封装:TO-220
    反向漏电流:5μA
    反向恢复时间:25ns
    反向电压:400V
    Total Capacitance:75pF

  • DonghaiSemiconductor MUR1540 FRD

    正向电流:15A
    封装:TO-220C; TO-220F
    反向恢复时间:30 ~ 45ns
    反向电压:400V
    Certifications:RoHS
    DC Blocking Voltage:410 ~ 440V
    Forward Voltage IF=10A:1.15V
    Forward Voltage IF=15A:1.25 ~ 1.40V
    Forward Voltage IF=15A TC=150℃:1.23V
    Forward Voltage IF=20A:1.38 ~ 1.50V
    Forward Voltage IF=30A:1.56V
    Forward Voltage IF=5A:1.05V
    Reverse Current VR=400V:5uA
    Reverse Current VR=400V Ta=150℃:500uA
    Total Capacitance:350pF

  • DonghaiSemiconductor MUR1040CT FRD

    正向电压:1.2 ~ 1.5V
    封装:TO-220
    反向漏电流:5µA
    反向恢复时间:24 ~ 35ns
    DC Blocking Voltage:410 ~ 440V
    DC Blocking Voltage IR=100uA:410 ~ 440V
    Maximum Instantaneous Forward Voltage IF=10A:1.35 ~ 1.5V
    Maximum Instantaneous Forward Voltage IF=5A:1.2 ~ 1.4V
    Maximum Instantaneous Forward Voltage IF=5A TC=150°C:≤1.25V
    Maximum Instantaneous Reverse Current VR=400V:≤5µA
    Maximum Instantaneous Reverse Current VR=400V TC=150°C:≤1mA
    Maximum Reverse Recovery Time:24 ~ 35ns
    Total Capacitance:75pF
    Total Capacitance VR=0V f=1MHz:75pF
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