电容:1.5pF |
暗电流:0.02 to 0.4 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.9 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working voltage temperature Coefficient:0.6 V |
电容:1pF |
暗电流:0.1 to 1.0 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.6 ns |
Responsibility:50 to 55 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.95 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9 V |
电容:1.5pF |
暗电流:0.02 to 0.4 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.9 V |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.6V |
电容:1pF |
暗电流:0.1 to 1.0 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.6 ns |
Responsibility:50 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.95 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9 V |
电容:1pF |
暗电流:0.1 to 1.0 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.6 ns |
Responsibility:50 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.95 V |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9V |
电容:1.5pF |
暗电流:0.02 to 0.4 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.9 V |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55℃ to 125 C |
Working Voltage Temperature Coefficient:0.6 V |
电容:1pF |
暗电流:0.1 to 1.0 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.6 ns |
Responsibility:50 to 55 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.95 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125C |
Working Voltage Temperature Coefficient:0.6 V |
电容:1 pF |
暗电流:0.2 to 1.0 nA |
工作和存储温度范围:-20 to 80 C |
Optimum Magnification Times:30 |
响应时间(高速模式):2 ns |
Responsibility:13 A/W |
Reverse Breakdown Voltage:350 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:150 to 200 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-40 to 100 C |
电容:1.5 pF |
暗电流:0.02 to 0.4 nA |
工作和存储温度范围:-20 to 85 C |
Optimum Magnification Times:100 |
响应时间(高速模式):0.3ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
焊接温度:260 C |
Diameter Of Photosensitive Surface:200 um;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Voltage:0.95 V |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.6V/℃ |
有效面积:680 X 480 um |
电容:1.5pF |
暗电流:5.0 nA |
工作和存储温度范围:-40 to 85 C |
Responsibility:0.4 to 0.5 A/W |
反向电流:5 mA |
电压 - DC 反向 (Vr)(最大值):40 V |
焊接温度:260 C |
Forward current:1 mA |
Optical Wavelength Range:400 to 1100 nm |
Saturation power:≤0.3W/cm2 |
Storage Temperature Range:-40 to 85 C |
有效面积:1000 um |
电容:1.5 pF |
暗电流:2.0 nA |
工作和存储温度范围:-40 to 85 C |
Responsibility:0.4 to 0.5 A/W |
反向电流:5 mA |
电压 - DC 反向 (Vr)(最大值):60 V |
焊接温度:260 C |
Forward current:1 mA |
Optical Wavelength Range:400 to 1100 nm |
Saturation power:≤0.3W/cm2 |
Storage Temperature Range:-40 to 85 C |
surface uniformity:5% |
Beam Divergence Parallel:8 to 10 |
工作和存储温度范围:-40 to 85 C |
电压 - DC 反向 (Vr)(最大值):3 V |
Solder Reflow Temperature:260 C |
Wavelength Temperature Coefficient:0.3 nm |
Aperture Size:190×10um2 |
Beam Divergence Perpendicula:25 to 30 |
Center wavelength:895 to 915 nm |
Duty cycle:0.1% |
Forward current:30 A |
Operating Voltage:20 to 25 V |
Peak output power:65 to 75 W |
Pulse width:200 ns |
Spectral width:7 nm |
Storage Temperature Range:-40 至 100 C |
Threshold current:0.75 to 1 A |
Beam Divergence Parallel:8 to10 |
工作和存储温度范围:-40 to 85 C |
电压 - DC 反向 (Vr)(最大值):3 V |
Solder Reflow Temperature:260 C |
Wavelength Temperature Coefficient:0.3nm/℃ |
Aperture Size:190×10um2 |
Beam Divergence Perpendicula:25 to 30 |
Center wavelength:895 to 915 nm |
Duty cycle:0.1% |
Forward current:max 40A Typ 30A |
Operating Voltage:15 to 20 V |
Peak output power:65 to 75W |
Pulse width:200 ns |
Spectral width:7 nm |
Storage Temperature Range:-40 至 100 C |
Threshold current:0.75 to 1 A |
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